公开(公告)号：US06389898B1

公开(公告)日：2002-05-21

申请号：US09424542

申请日：2000-02-22

申请人： Helmut Seidel ,  Matthias Aikele ,  Ulrich Prechtel ,  Oliver Nagler ,  Karl Kühl

发明人： Helmut Seidel ,  Matthias Aikele ,  Ulrich Prechtel ,  Oliver Nagler ,  Karl Kühl

IPC分类号： G01P1510

CPC分类号： G01P15/097 ,  G01C19/5621 ,  G01P2015/0817

摘要： A microsensor with a resonator structure, which is excited by first electrical signals to oscillate and emits second electrical signals in dependence on the measuring variable, wherein a heating element, supplied with at least one of the first electrical signals, is arranged on the resonator structure for the thermal excitations of oscillations. For the thermal excitation of lateral oscillations in a microsensor with a resonator structure, the microsensor is provided at one oscillating part of the resonator structure with at least two regions that are thermally separated by a zone with reduced heat conductance, and the heating element is arranged on one of the regions. This type of arrangements permits the excitation of the resonator structure to lateral oscillations if the heating element is supplied with corresponding current pulses. It is advantageous if a receiving element is arranged on at least one of the other regions to detect the oscillation amplitude.

摘要翻译： 一种具有谐振器结构的微传感器，其由第一电信号激发，以根据测量变量振荡并发出第二电信号，其中提供有至少一个第一电信号的加热元件布置在谐振器结构 用于振荡的热激发。 对于具有谐振器结构的微传感器中的横向振荡的热激发，微传感器被提供在谐振器结构的一个振荡部分处，具有至少两个区域，该区域被热导率降低的区域热隔离，并且加热元件布置 在其中一个地区。 如果加热元件被提供相应的电流脉冲，这种类型的布置允许谐振器结构的激励到横向振荡。 接收元件布置在至少一个其它区域上以检测振荡幅度是有利的。

公开(公告)号：US20060121735A1

公开(公告)日：2006-06-08

申请号：US10527789

申请日：2003-09-12

申请人： Matthias Aikele ,  Albert Engelhardt ,  Marcus Frey ,  Bernhard Hartmann ,  Helmut Seidel

发明人： Matthias Aikele ,  Albert Engelhardt ,  Marcus Frey ,  Bernhard Hartmann ,  Helmut Seidel

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： B81C1/00698 ,  B81B2201/0235 ,  B81B2203/033 ,  B81C2201/0178

摘要： The invention relates to processes for the formation of isolation structures for micro-machined sensors in single-crystal surface technology. In known processes, silicon structures defined by deep trenches are etched and uncovered by a “release etch” step also at their bottom surface towards the substrate. The subsequent lining of these trenches with a non-conducting insulating material, such as silicon dioxide leads to a firm anchoring by means of a surrounding of the silicon structure with the lined trenches on three sides, leaving one side uncovered. It is the main idea of the invention—instead of lining the trenches—to convert thin-walled silicon into an electrically non-conducting material. This can, for instance, be accomplished by means of a thermal oxidation of narrow silicon ribs released prior thereto by trenches. In the minimal configuration, two trenches (holes) per rib with the required structure depth must be etched for this purpose. The silicon rib between them must be narrow enough to permit its complete thermal through oxidation.

摘要翻译： 本发明涉及用于在单晶表面技术中形成用于微加工传感器的隔离结构的方法。 在已知的工艺中，由深沟槽限定的硅结构通过在其底表面朝向衬底的“释放蚀刻”步骤被蚀刻和未覆盖。 这些具有非导电绝缘材料（例如二氧化硅）的这些沟槽的后续衬里导致通过硅结构的周围与三面沟槽在三面上的牢固锚定，留下一侧未覆盖。 本发明的主要思想是将薄壁硅转化为非导电材料，而不是将沟槽衬里。 这可以例如通过在其之前通过沟槽释放的窄硅肋的热氧化来实现。 在最小的构造中，为了这个目的，必须蚀刻每个具有所需结构深度的肋的两个沟槽（孔）。 它们之间的硅筋必须足够窄以使其完全通过热氧化。

公开(公告)号：US07862731B2

公开(公告)日：2011-01-04

申请号：US10527789

申请日：2003-09-12

申请人： Matthias Aikele ,  Albert Engelhardt ,  Marcus Frey ,  Bernhard Schmid ,  Helmut Seidel

发明人： Matthias Aikele ,  Albert Engelhardt ,  Marcus Frey ,  Bernhard Schmid ,  Helmut Seidel

IPC分类号： H01L21/302 ,  B81C1/00

CPC分类号： B81C1/00698 ,  B81B2201/0235 ,  B81B2203/033 ,  B81C2201/0178

摘要： To form an isolation structure in a semiconductor substrate, at least two trenches are formed with a rib therebetween in the semiconductor substrate, and then the semiconductor material in the area of the trenches and particularly the rib is converted to an electrically insulating material. For example, this is accomplished by thermal oxidation of silicon semiconductor material of the rib.

摘要翻译： 为了在半导体衬底中形成隔离结构，在半导体衬底中形成至少两个沟槽，其间沟槽中的半导体材料转变为电绝缘材料。 例如，这通过肋的硅半导体材料的热氧化来实现。

公开(公告)号：US06564637B1

公开(公告)日：2003-05-20

申请号：US09806404

申请日：2001-05-15

申请人： Josef Schalk ,  Erwin Stenzel ,  Karin Bauer ,  Rainer Freitag ,  Roland Hilser ,  Ralf Voss ,  Matthias Aikele ,  Helmut Seidel ,  Ulrich Prechtel

发明人： Josef Schalk ,  Erwin Stenzel ,  Karin Bauer ,  Rainer Freitag ,  Roland Hilser ,  Ralf Voss ,  Matthias Aikele ,  Helmut Seidel ,  Ulrich Prechtel

IPC分类号： G01P904

CPC分类号： G01C19/5621 ,  G01C19/5614 ,  G01P21/00

摘要： A self-testing sensor (especially to measure an angular rate or acceleration) includes a resonant structure, an actor unit configured to excite the structure to a first periodic vibration, a piezoresistive element configured to generate an output signal that depends on the measured quantity, and an isolator configured to isolate a test signal component from the output signal, whereby the test signal component is generated by a second periodic vibration of the structure superposed on the first vibration. A device for self-testing a sensor includes an isolator configured to isolate a test signal component superposed on a useful signal component from the periodic output signal of the sensor, and it includes a comparator configured to compare the test signal component with a predefined value or a test signal fed to the sensor. For the self-test, a second periodic vibration is superposed on a first vibration of the structure, and an output signal containing information on the measured quantity is determined. A test signal component contained in the output signal is monitored.

摘要翻译： 自检传感器（特别是用于测量角速率或加速度）包括谐振结构，被配置为将结构激发到第一周期性振动的动作单元，配置成产生取决于测量量的输出信号的压阻元件， 以及隔离器，被配置为将测试信号分量与输出信号隔离，由此通过叠加在第一振动上的结构的第二周期性振动来产生测试信号分量。 用于对传感器进行自检的装置包括：隔离器，被配置为将叠加在有用信号分量上的测试信号分量与传感器的周期性输出信号隔离，并且其包括比较器，其被配置为将测试信号分量与预定义的值进行比较， 测试信号馈送到传感器。 对于自检，第二周期振动叠加在结构的第一振动上，并且确定包含关于测量量的信息的输出信号。 监视输出信号中包含的测试信号分量。