公开(公告)号：US20250046384A1

公开(公告)日：2025-02-06

申请号：US18923698

申请日：2024-10-23

Applicant: Kioxia Corporation

Inventor： Akio SUGAHARA ,  Takaya HANDA ,  Ryosuke ISOMURA ,  Kazuto UEHARA ,  Junichi SATO ,  Norichika ASAOKA ,  Masashi YAMAOKA ,  Bushnaq SANAD ,  Yuzuru SHIBAZAKI ,  Noriyasu KUMAZAKI ,  Yuri TERADA

IPC: G11C16/30 ,  G11C16/04 ,  G11C16/08 ,  G11C16/12 ,  G11C16/26 ,  G11C16/32 ,  H10B69/00

Abstract: A memory device includes a memory cell array, a voltage generation circuit generating one or more voltages supplied to the memory cell array, an input/output circuit receiving a first command and an address indicating a region in the memory cell array, and a control circuit controlling a read operation to the memory cell array based on the first command. The control circuit supplies a non-selection voltage of the voltages before a ready/busy signal changes from a ready state to a busy state.

公开(公告)号：US20220230665A1

公开(公告)日：2022-07-21

申请号：US17716295

申请日：2022-04-08

Applicant: Kioxia Corporation

Inventor： Yasuhiro HIRASHIMA ,  Mitsuhiro ABE ,  Norichika ASAOKA

IPC: G11C7/10 ,  G11C29/12

Abstract: According to one embodiment, a semiconductor memory device includes: a first delay circuit configured to delay a first signal and provide a variable delay time; a first select circuit configured to select a second signal or a third signal based on the first signal delayed by the first delay circuit; a first output buffer configured to output a fourth signal based on a signal selected by the first select circuit; a first output pad configured to externally output the fourth signal; and a counter configured to count a number of times the fourth signal is output.

公开(公告)号：US20230317177A1

公开(公告)日：2023-10-05

申请号：US18205915

申请日：2023-06-05

Applicant: Kioxia Corporation

Inventor： Akio SUGAHARA ,  Takaya HANDA ,  Ryosuke ISOMURA ,  Kazuto UEHARA ,  Junichi SATO ,  Norichika ASAOKA ,  Masashi YAMAOKA ,  Bushnaq SANAD ,  Yuzuru SHIBAZAKI ,  Noriyasu KUMAZAKI ,  Yuri TERADA

IPC: G11C16/30 ,  G11C16/04 ,  G11C16/32 ,  G11C16/08

CPC classification number: G11C16/30 ,  G11C16/0483 ,  G11C16/32 ,  G11C16/08 ,  G11C16/26

Abstract: A memory device includes a memory cell array, a voltage generation circuit generating one or more voltages supplied to the memory cell array, an input/output circuit receiving an address indicating a region in the memory cell array, and a control circuit controlling operations of the memory cell array. The control circuit supplies a non-selection voltage of the voltages before a ready/busy signal changes from a ready state to a busy state.

公开(公告)号：US20220284963A1

公开(公告)日：2022-09-08

申请号：US17824758

申请日：2022-05-25

Applicant: KIOXIA CORPORATION

Inventor： Norichika ASAOKA

IPC: G11C16/08 ,  G11C16/16 ,  G11C16/04 ,  G11C16/32 ,  G11C16/26

Abstract: A semiconductor memory device includes first, second, third, and fourth planes, a first address bus connected to the first and third planes, a second address bus connected to the second and fourth planes, and a control circuit configured to execute a synchronous process on at least two planes in response to a first command set including a first address and a second address. The control circuit is configured to transfer the first address to the first and third planes through the first address bus, and the second address to the second and fourth planes through the second address bus, and during the synchronous process, select a first block in one of the first and third planes, based on the transferred first address and select a second block in one of the second and fourth planes, based on the transferred second address.

公开(公告)号：US20220277779A1

公开(公告)日：2022-09-01

申请号：US17471302

申请日：2021-09-10

Applicant: Kioxia Corporation

Inventor： Norichika ASAOKA

IPC: G11C7/10 ,  G11C8/06

Abstract: According to an embodiment, a semiconductor device includes a control circuit. The control circuit is configured to receive a first command and execute, based on the first command, a first operation and a second operation. The second operation is executed after the first operation. The control circuit is further configured to output a first signal from a start of the first operation to a start of the second operation. The first signal indicates that the semiconductor device is in a busy state in which the semiconductor device refrains from accepting, from an external controller, a second command for execution of the first operation and a third command for execution of the second operation.