公开(公告)号：US20230317177A1

公开(公告)日：2023-10-05

申请号：US18205915

申请日：2023-06-05

Applicant: Kioxia Corporation

Inventor： Akio SUGAHARA ,  Takaya HANDA ,  Ryosuke ISOMURA ,  Kazuto UEHARA ,  Junichi SATO ,  Norichika ASAOKA ,  Masashi YAMAOKA ,  Bushnaq SANAD ,  Yuzuru SHIBAZAKI ,  Noriyasu KUMAZAKI ,  Yuri TERADA

IPC: G11C16/30 ,  G11C16/04 ,  G11C16/32 ,  G11C16/08

CPC classification number: G11C16/30 ,  G11C16/0483 ,  G11C16/32 ,  G11C16/08 ,  G11C16/26

Abstract: A memory device includes a memory cell array, a voltage generation circuit generating one or more voltages supplied to the memory cell array, an input/output circuit receiving an address indicating a region in the memory cell array, and a control circuit controlling operations of the memory cell array. The control circuit supplies a non-selection voltage of the voltages before a ready/busy signal changes from a ready state to a busy state.

公开(公告)号：US20250046384A1

公开(公告)日：2025-02-06

申请号：US18923698

申请日：2024-10-23

Applicant: Kioxia Corporation

Inventor： Akio SUGAHARA ,  Takaya HANDA ,  Ryosuke ISOMURA ,  Kazuto UEHARA ,  Junichi SATO ,  Norichika ASAOKA ,  Masashi YAMAOKA ,  Bushnaq SANAD ,  Yuzuru SHIBAZAKI ,  Noriyasu KUMAZAKI ,  Yuri TERADA

IPC: G11C16/30 ,  G11C16/04 ,  G11C16/08 ,  G11C16/12 ,  G11C16/26 ,  G11C16/32 ,  H10B69/00

Abstract: A memory device includes a memory cell array, a voltage generation circuit generating one or more voltages supplied to the memory cell array, an input/output circuit receiving a first command and an address indicating a region in the memory cell array, and a control circuit controlling a read operation to the memory cell array based on the first command. The control circuit supplies a non-selection voltage of the voltages before a ready/busy signal changes from a ready state to a busy state.