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    Copper interconnect structure having stuffed diffusion barrier
    2.
    发明授权
    Copper interconnect structure having stuffed diffusion barrier 有权
    铜互连结构具有填充扩散阻挡层

    公开(公告)号：US07732331B2

    公开(公告)日：2010-06-08

    申请号：US10998229

    申请日：2004-11-16

    申请人： Ki-Bum Kim ,  Pekka J. Soininen ,  Ivo Raaijmakers

    发明人： Ki-Bum Kim ,  Pekka J. Soininen ,  Ivo Raaijmakers

    IPC分类号： H01L21/44 ,  H01L21/00 ,  H01L23/48 ,  H01L23/52

    CPC分类号： H01L21/76846 ,  H01L21/28562 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76858 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The present invention provides a method of fabricating a semiconductor device, which could advance the commercialization of semiconductor devices with a copper interconnect. In a process of metal interconnect line fabrication, a TiN thin film combined with an Al intermediate layer is used as a diffusion barrier on trench or via walls. For the formation, Al is deposited on the TiN thin film followed by copper filling the trench. Al diffuses to TiN layer and reacts with oxygen or nitrogen, which will stuff grain boundaries efficiently, thereby blocking the diffusion of copper successfully.

    摘要翻译： 本发明提供一种制造半导体器件的方法，其可以通过铜互连促进半导体器件的商业化。 在金属互连线制造的过程中，与Al中间层结合的TiN薄膜用作沟槽或通孔壁上的扩散阻挡层。 为了形成，Al沉积在TiN薄膜上，随后铜填充沟槽。 Al扩散到TiN层并与氧或氮反应，这将有效地吸收晶界，从而阻止铜的扩散。

    Oxygen bridge structures and methods to form oxygen bridge structures
    5.
    发明授权
    Oxygen bridge structures and methods to form oxygen bridge structures 有权
    氧桥结构和形成氧桥结构的方法

    公开(公告)号：US07465658B2

    公开(公告)日：2008-12-16

    申请号：US11411430

    申请日：2006-04-25

    申请人： Ivo Raaijmakers ,  Pekka J. Soininen ,  Kai-Erik Elers

    发明人： Ivo Raaijmakers ,  Pekka J. Soininen ,  Kai-Erik Elers

    IPC分类号： H01L21/4763

    CPC分类号： H01L21/76846 ,  C23C16/0272 ,  H01L21/28562 ,  H01L21/32051 ,  H01L21/76856 ,  H01L21/76879 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method is proposed for improving the adhesion between a diffusion barrier film and a metal film. Both the diffusion barrier film and the metal film can be deposited in either sequence onto a semiconductor substrate. A substrate comprising a first film, which is one of a diffusion barrier film or a metal film, with the first film being exposed at least at part of the surface area of the substrate, is exposed to an oxygen-containing reactant to create a surface termination of about one monolayer of oxygen-containing groups or oxygen atoms on the exposed parts of the first film. Then the second film, which is the other one of a diffusion barrier film and a metal film, is deposited onto the substrate. Furthermore, an oxygen bridge structure is proposed, the structure comprising a diffusion barrier film and a metal film having an interface with the diffusion barrier film, wherein the interface comprises a monolayer of oxygen atoms.

    摘要翻译： 提出了改善扩散阻挡膜和金属膜之间的粘合性的方法。 扩散阻挡膜和金属膜都可以以任一顺序沉积到半导体衬底上。 包含第一膜，其是扩散阻挡膜或金属膜之一，其中第一膜至少部分地暴露于基底的表面区域，以暴露于含氧反应物以形成表面 在第一膜的暴露部分上终止约一个单层的含氧基团或氧原子。 然后将作为扩散阻挡膜和金属膜中的另一个的第二膜沉积在基板上。 此外，提出了氧桥结构，其结构包括扩散阻挡膜和与扩散阻挡膜具有界面的金属膜，其中界面包括单层氧原子。

    Oxygen bridge structures and methods to form oxygen bridge structures
    7.
    发明授权
    Oxygen bridge structures and methods to form oxygen bridge structures 有权
    氧桥结构和形成氧桥结构的方法

    公开(公告)号：US07034397B2

    公开(公告)日：2006-04-25

    申请号：US10696244

    申请日：2003-10-28

    申请人： Ivo Raaijmakers ,  Pekka J. Soininen ,  Kai-Erik Elers

    发明人： Ivo Raaijmakers ,  Pekka J. Soininen ,  Kai-Erik Elers

    IPC分类号： H01L23/48 ,  H01L21/4763

    CPC分类号： H01L21/76846 ,  C23C16/0272 ,  H01L21/28562 ,  H01L21/32051 ,  H01L21/76856 ,  H01L21/76879 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method is proposed for improving the adhesion between a diffusion barrier film and a metal film. Both the diffusion barrier film and the metal film can be deposited in either sequence onto a semiconductor substrate. A substrate comprising a first film, which is one of a diffusion barrier film or a metal film, with the first film being exposed at least at part of the surface area of the substrate, is exposed to an oxygen-containing reactant to create a surface termination of about one monolayer of oxygen-containing groups or oxygen atoms on the exposed parts of the first film. Then the second film, which is the other one of a diffusion barrier film and a metal film, is deposited onto the substrate. Furthermore, an oxygen bridge structure is proposed, the structure comprising a diffusion barrier film and a metal film having an interface with the diffusion barrier film, wherein the interface comprises a monolayer of oxygen atoms.

    摘要翻译： 提出了改善扩散阻挡膜和金属膜之间的粘合性的方法。 扩散阻挡膜和金属膜都可以以任一顺序沉积到半导体衬底上。 包含第一膜，其是扩散阻挡膜或金属膜之一，其中第一膜至少部分地暴露于基底的表面区域，以暴露于含氧反应物以形成表面 在第一膜的暴露部分上终止约一个单层的含氧基团或氧原子。 然后将作为扩散阻挡膜和金属膜中的另一个的第二膜沉积在基板上。 此外，提出了氧桥结构，其结构包括扩散阻挡膜和与扩散阻挡膜具有界面的金属膜，其中界面包括单层氧原子。

    Dielectric layers and methods of forming the same
    8.
    发明授权
    Dielectric layers and methods of forming the same 有权
    介电层及其形成方法

    公开(公告)号：US07323422B2

    公开(公告)日：2008-01-29

    申请号：US10379516

    申请日：2003-03-04

    申请人： Ivo Raaijmakers ,  Pekka J. Soininen ,  Jan Willem Maes

    发明人： Ivo Raaijmakers ,  Pekka J. Soininen ,  Jan Willem Maes

    IPC分类号： H01L21/31 ,  H01L21/469

    CPC分类号： H01L28/56 ,  H01L28/60 ,  H01L2924/0002 ,  H01L2924/00

    摘要： High dielectric constant (high-k) materials are formed directly over oxidation-susceptible conductors such as silicon. A discontinuous layer is formed, with gaps between grains of the high-k material. Exposed conductor underneath the grain boundaries is oxidized or nitridized to form, e.g., silicon dioxide or silicon nitride, when exposed to oxygen or nitrogen source gases at elevated temperatures. This dielectric growth is preferential underneath the grain boundaries such that any oxidation or nitridation at the interface between the high-k material grains and covered conductor is not as extensive. The overall dielectric constant of the composite film is high, while leakage current paths between grains is reduced. Ultrathin high-k materials with low leakage current are thereby enabled.

    摘要翻译： 高介电常数（高k）材料直接在氧化敏感导体（如硅）上形成。 形成不连续层，在高k材料的晶粒之间形成间隙。 在高温下暴露于氧或氮源气体时，在晶界之下的暴露导体被氧化或氮化以形成例如二氧化硅或氮化硅。 这种电介质生长优选在晶界之下，使得在高k材料晶粒和被覆导体之间的界面处的任何氧化或氮化不是很广泛。 复合膜的总介电常数高，而晶粒间的漏电流路径减小。 从而能够实现低泄漏电流的超薄高k材料。

    Apparatus and methods for deposition reactors
    10.
    发明授权
    Apparatus and methods for deposition reactors 有权
    沉积反应器的装置和方法

    公开(公告)号：US08741062B2

    公开(公告)日：2014-06-03

    申请号：US12148885

    申请日：2008-04-22

    申请人： Sven Lindfors ,  Pekka J. Soininen

    发明人： Sven Lindfors ,  Pekka J. Soininen

    IPC分类号： C23C16/455 ,  C23C16/52 ,  H01L21/306 ,  C23F1/00 ,  C23C16/06 ,  C23C16/22

    CPC分类号： F16L53/00 ,  C23C16/4485 ,  C23C16/45544 ,  C23C16/45553 ,  C23C16/45561 ,  Y10T137/6416

    摘要： An apparatus, such as an ALD (Atomic Layer Deposition) apparatus, including a precursor source configured for depositing material on a heated substrate in a deposition reactor by sequential self-saturating surface reactions. The apparatus includes an in-feed line for feeding precursor vapor from the precursor source to a reaction chamber and a structure configured for utilizing heat from a reaction chamber heater for preventing condensation of precursor vapor into liquid or solid phase between the precursor source and the reaction chamber. Also various other apparatus and methods are presented.

    摘要翻译： 一种诸如ALD（原子层沉积）装置的装置，包括被配置用于通过连续的自饱和表面反应在沉积反应器中在加热的衬底上沉积材料的前体源。 该装置包括用于将前体蒸气从前体源供给到反应室的进料管线和被配置为利用来自反应室加热器的热量以防止前体蒸气冷凝到前体源和反应器之间的液体或固相的结构 房间。 还提出了各种其他装置和方法。