公开(公告)号：US08293456B2

公开(公告)日：2012-10-23

申请号：US12390157

申请日：2009-02-20

申请人： Kazuya Fukuhara ,  Takaki Hashimoto ,  Kazuyuki Masukawa ,  Yasunobu Kai

发明人： Kazuya Fukuhara ,  Takaki Hashimoto ,  Kazuyuki Masukawa ,  Yasunobu Kai

IPC分类号： G03F1/00

CPC分类号： G03F1/00 ,  G03F1/36 ,  G03F7/70433

摘要： A semiconductor device manufacturing method includes applying illumination light to a photomask, and projecting diffracted light components from the photomask via a projection optical system to form a photoresist pattern on a substrate. The photomask includes a plurality of opening patterns which are arranged on each of a plurality of parallel lines at regular second intervals in a second direction and which have regular first intervals in a first direction perpendicular to the second direction. The plurality of opening patterns arranged on the adjacent ones of the plurality of parallel lines are displaced from each other half the second interval in the second direction. Moreover, the dimensions of the plurality of opening patterns and the complex amplitude transmittance of nontransparent region in the photomask are set so that three of the diffracted light components passing through the pupil of the projection optical system have equal amplitude.

摘要翻译： 一种半导体器件制造方法，包括将照明光施加到光掩模，以及经由投影光学系统从光掩模投射衍射光成分，以在基板上形成光刻胶图案。 光掩模包括多个开口图案，其以在第二方向上的规则的第二间隔布置在多条平行线中的每一条上，并且在垂直于第二方向的第一方向上具有规则的第一间隔。 布置在多条平行线上相邻的多个平行线上的多个开口图案在第二方向上相互偏移第二间隔的一半。 此外，设置多个开口图案的尺寸和光掩模中的非透明区域的复振幅透射率，使得穿过投影光学系统的光瞳的三个衍射光分量具有相等的幅度。

公开(公告)号：US08085393B2

公开(公告)日：2011-12-27

申请号：US12554782

申请日：2009-09-04

申请人： Kentaro Kasa ,  Takashi Sato ,  Kazuya Fukuhara

发明人： Kentaro Kasa ,  Takashi Sato ,  Kazuya Fukuhara

IPC分类号： G01N11/00

CPC分类号： G03F7/70641

摘要： A mask pattern includes a first pattern having a line-and-space pattern extending in a first direction, a second pattern formed as a line-and-space pattern having a larger period than the first pattern and extending in the first direction, a third pattern having a line-and-space pattern extending in a second direction, and a fourth pattern formed as a line-and-space pattern having a larger period than the third pattern and extending in the second direction. Illumination light is obliquely incident on the first pattern and the second pattern from a first oblique direction, illumination light is obliquely incident on the third pattern and the fourth pattern from a second oblique direction, and a relative distance from the first pattern to the second pattern transferred on to an image receptor and a relative distance from the third pattern to the fourth pattern transferred onto the image receptor are measured and an optical characteristic of an exposure apparatus is ascertained based on the relative distances.

摘要翻译： 掩模图案包括具有沿第一方向延伸的线间距图案的第一图案，形成为具有比第一图案更长的周期并沿第一方向延伸的线间距图案的第二图案，第三图案 图案具有沿第二方向延伸的线间距图案，以及形成为具有比第三图案更大的周期并沿第二方向延伸的线间距图案的第四图案。 照明光从第一倾斜方向倾斜入射在第一图案和第二图案上，照明光从第二倾斜方向倾斜入射在第三图案和第四图案上，并且从第一图案到第二图案的相对距离 转印到图像接收器上，并且测量从第三图案到转印到图像接收器上的第四图案的相对距离，并且基于相对距离确定曝光设备的光学特性。

公开(公告)号：US20110298116A1

公开(公告)日：2011-12-08

申请号：US13118401

申请日：2011-05-28

申请人： Shinya MIZUSAKI ,  Kazuya Fukuhara

发明人： Shinya MIZUSAKI ,  Kazuya Fukuhara

IPC分类号： H01L23/495 ,  H01L21/78

CPC分类号： H01L23/49541 ,  H01L21/561 ,  H01L21/565 ,  H01L21/6835 ,  H01L21/6836 ,  H01L23/3107 ,  H01L23/49503 ,  H01L23/49548 ,  H01L23/544 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/97 ,  H01L2221/68327 ,  H01L2223/54413 ,  H01L2223/54433 ,  H01L2223/54486 ,  H01L2224/05554 ,  H01L2224/27013 ,  H01L2224/32057 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/83001 ,  H01L2224/83385 ,  H01L2224/85001 ,  H01L2224/92247 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/181 ,  H01L2224/85 ,  H01L2224/83 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/05599

摘要： An object of the present invention is to improve the quality control of a semiconductor device. By forming an inscription comprising a culled or pixel skipping pattern of dimples on the upper surface of a die pad in a QFN, it is possible to confirm the inscription by X-ray inspection or the like even after individuation and specify a cavity of a resin molding die. Further, it is possible to specify the position of a device region in a lead frame. As a result, when a defect appears, it is possible to sort a defective QFN by appearance inspection and improve quality control in the assembly of a QFN.

摘要翻译： 本发明的目的在于提高半导体器件的质量控制。 通过在QFN中在芯片垫的上表面上形成包括凹陷的剔除或像素跳过图案的题字，即使在个体化之后也可以通过X射线检查等来确认题字，并指定树脂的空腔 成型模具。 此外，可以指定引线框架中的器件区域的位置。 结果，当出现缺陷时，可以通过外观检查对有缺陷的QFN进行分类，并提高组装QFN的质量控制。

公开(公告)号：US20110177458A1

公开(公告)日：2011-07-21

申请号：US13007238

申请日：2011-01-14

申请人： Toshiya KOTANI ,  Kazuya Fukuhara ,  Michiya Takimoto ,  Hidefumi Mukai ,  Soichi Inoue

发明人： Toshiya KOTANI ,  Kazuya Fukuhara ,  Michiya Takimoto ,  Hidefumi Mukai ,  Soichi Inoue

IPC分类号： G03F7/20 ,  G06F17/50

CPC分类号： G03F7/70425 ,  G03F7/70558

摘要： According to one embodiment, a deviation amount distribution of a two-dimensional shape parameter between a mask pattern formed on a mask and a desired mask pattern is acquired as a mask pattern map. Such that a deviation amount of the two-dimensional shape parameter between a pattern on substrate formed when the mask is subjected to exposure shot to form a pattern on a substrate and a desired pattern on substrate fits within a predetermined range, an exposure is determined for each position in the exposure shot in forming the pattern on substrate based on the mask pattern map.

摘要翻译： 根据一个实施例，获取形成在掩模上的掩模图案与期望的掩模图案之间的二维形状参数的偏差量分布作为掩模图案图。 使得当在掩模经受曝光拍摄以形成基板上的图案和在基板上形成图案之后形成的基板上的图案之间的二维形状参数的偏移量适合在预定范围内时，确定曝光 基于掩模图案图，在基板上形成图案的曝光中的每个位置。

公开(公告)号：US20100315643A1

公开(公告)日：2010-12-16

申请号：US12776003

申请日：2010-05-07

申请人： Hiroyuki KASHIWAGI ,  Kazuya Fukuhara

发明人： Hiroyuki KASHIWAGI ,  Kazuya Fukuhara

IPC分类号： G01N21/00

CPC分类号： G01N21/956 ,  B82Y20/00 ,  G01N2021/4707 ,  G01N2021/95615

摘要： A method for inspecting a nano-imprint template, includes irradiating light onto a template for nano-imprinting from a back surface side of the template, the template having a front surface where a pattern is formed, detecting near-field light which is generated near the front surface of the template by the irradiation of the light, and performing an inspection of the template on the basis of the detected near-field light.

摘要翻译： 一种用于检查纳米压印模板的方法，包括将光从模板的背面侧照射到用于纳米压印的模板上，模板具有形成图案的正面，检测近场产生的近场光 通过照射光的模板的前表面，并且基于检测到的近场光执行模板的检查。

公开(公告)号：US20090231568A1

公开(公告)日：2009-09-17

申请号：US12400701

申请日：2009-03-09

申请人： Kazuya Fukuhara

发明人： Kazuya Fukuhara

IPC分类号： G03B27/52 ,  G01B11/00

CPC分类号： G03B27/52 ,  G03F7/70433 ,  G03F7/706 ,  G03F7/7085 ,  G03F7/70983

摘要： A method of measuring a wavefront error of an exposure light that occurs when the exposure light passes through an optical system that is used in an exposure apparatus is proposed. The method includes measuring the wavefront error of the exposure light by using a measurement optical element including a pellicle arranged in an optical path of the exposure light that passes through the optical system.

摘要翻译： 提出了一种测量当曝光光通过用于曝光设备的光学系统时发生的曝光光的波前误差的方法。 该方法包括通过使用包括布置在通过光学系统的曝光光的光路中的防护薄膜的测量光学元件来测量曝光光的波前误差。

公开(公告)号：US07537869B2

公开(公告)日：2009-05-26

申请号：US11108862

申请日：2005-04-19

申请人： Masafumi Asano ,  Kazuya Fukuhara

发明人： Masafumi Asano ,  Kazuya Fukuhara

IPC分类号： G03C5/00 ,  G03F9/00

CPC分类号： G03F7/70675 ,  G03F1/44 ,  G03F7/70625 ,  Y10S430/143 ,  Y10S430/146

摘要： A method for evaluating a pattern formation process includes applying a photoresist on a substrate, transferring a first pattern and a second pattern adjacent to or at least partly overlapped with each other to the photoresist, wherein the first pattern includes a plurality of lines consisting of transparent regions, having the same length and a line-width less than or on the order of wavelengths of visible light, periodically located parallel to one another with end portions aligned on both sides thereof, and the second pattern comprises a transparent region having a larger area compared with each of the lines, and determining, in a first pattern formed on the substrate with the first pattern transferred to the photoresist, by an optical means, an amount of shorting of the lines in a direction parallel to the line.

摘要翻译： 一种用于评估图案形成工艺的方法包括在衬底上施加光致抗蚀剂，将第一图案和与第一图案相邻或至少部分重叠的第二图案转印到光致抗蚀剂上，其中第一图案包括多个由透明 区域，具有小于或等于可见光波长的相同长度和线宽，周期性地彼此平行地定位，其端部在其两侧对齐，并且第二图案包括具有较大面积的透明区域 与每条线相比较，并且在通过光学装置将第一图案转印到光致抗蚀剂的基板上形成的第一图案中确定在与该线平行的方向上的线的短路量。

公开(公告)号：US20090004581A1

公开(公告)日：2009-01-01

申请号：US11907191

申请日：2007-10-10

申请人： Kazuya Fukuhara ,  Tatsuhiko Higashiki

发明人： Kazuya Fukuhara ,  Tatsuhiko Higashiki

IPC分类号： G03C5/00 ,  G03F7/00 ,  G03B27/72

CPC分类号： G03F7/70441 ,  G02B5/205 ,  G03F7/70191 ,  G03F7/70625

摘要： There is disclosed an exposure apparatus which includes an illumination optical system including a light source which emits illumination light, a mask stage which holds a photomask having a mask pattern thereon to be illuminated with the illumination light, and a light intensity distribution filter arranged on a plane, which plane is positioned in the illumination optical system and is optically in relation of Fourier transform to the mask pattern, the light intensity distribution filter configured to vary a light intensity distribution of the illumination light in a cross section of a bundle of the illumination light.

摘要翻译： 公开了一种曝光装置，其包括：照明光学系统，其包括发射照明光的光源;掩模台，其保持具有用照明光照射的掩模图案的光掩模;以及光强度分布滤光器， 平面，该平面位于照明光学系统中，并且在光学上与傅立叶变换相关联，该光强度分布滤光器被配置为改变照明束的横截面中的照明光的光强度分布 光。

公开(公告)号：US07186485B2

公开(公告)日：2007-03-06

申请号：US10615228

申请日：2003-07-09

申请人： Kazuya Fukuhara ,  Satoshi Tanaka ,  Soichi Inoue

发明人： Kazuya Fukuhara ,  Satoshi Tanaka ,  Soichi Inoue

IPC分类号： G03F9/00 ,  G03C5/00

CPC分类号： G03F7/70566 ,  G03F7/706

摘要： An inspection method, includes obtaining a first optical characteristic of a projection optical system by transferring an image of an aberration measurement unit of a photomask on a first resist film coated on a first wafer by use of a first polarized exposure light; obtaining a second optical characteristic of the projection optical system by transferring the image of the aberration measurement unit on a second resist film coated on a second wafer by use of a second exposure light having a polarization state different from the first exposure light; and calculating a difference between the first and second optical characteristics.

摘要翻译： 一种检查方法，包括通过使用第一偏振曝光光在涂覆在第一晶片上的第一抗蚀膜上转印光掩模的像差测量单元的图像来获得投影光学系统的第一光学特性; 通过使用具有与第一曝光光不同的偏振状态的第二曝光光，将像差测量单元的图像转印在涂覆在第二晶片上的第二抗蚀剂膜上，从而获得投影光学系统的第二光学特性; 以及计算第一和第二光学特性之间的差。

公开(公告)号：US07139998B2

公开(公告)日：2006-11-21

申请号：US10673427

申请日：2003-09-30

申请人： Kazuya Fukuhara ,  Tatsuhiko Higashiki ,  Soichi Inoue

发明人： Kazuya Fukuhara ,  Tatsuhiko Higashiki ,  Soichi Inoue

IPC分类号： G06F17/50

CPC分类号： G03F1/70

摘要： A photomask designing method used in a lithography process, the lithography process comprises illuminating light on a photomask and converging the light which has passed through the photomask on a photosensitive substrate via a projection optical system, the photomask designing method comprises acquiring a transmittance characteristic of the projection optical system, the characteristic varing depending on a difference in optical paths of light in the projection optical system, the light passing through the projection optical system, and acquiring mask bias of the photomask by use of the transmittance characteristic of the projection optical system.

摘要翻译： 在光刻工艺中使用的光掩模设计方法中，光刻工艺包括在光掩模上照亮光，并通过投影光学系统将已经通过光掩模的光会聚在感光基板上，光掩模设计方法包括获得 投影光学系统，根据投影光学系统中的光的光路差异，穿过投影光学系统的光以及通过投影光学系统的透射特性来获取光掩模的掩模偏置的特征变化。