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公开(公告)号：US07186485B2
公开(公告)日：2007-03-06
申请号：US10615228
申请日：2003-07-09
申请人： Kazuya Fukuhara , Satoshi Tanaka , Soichi Inoue
发明人： Kazuya Fukuhara , Satoshi Tanaka , Soichi Inoue
CPC分类号： G03F7/70566 , G03F7/706
摘要： An inspection method, includes obtaining a first optical characteristic of a projection optical system by transferring an image of an aberration measurement unit of a photomask on a first resist film coated on a first wafer by use of a first polarized exposure light; obtaining a second optical characteristic of the projection optical system by transferring the image of the aberration measurement unit on a second resist film coated on a second wafer by use of a second exposure light having a polarization state different from the first exposure light; and calculating a difference between the first and second optical characteristics.
摘要翻译： 一种检查方法，包括通过使用第一偏振曝光光在涂覆在第一晶片上的第一抗蚀膜上转印光掩模的像差测量单元的图像来获得投影光学系统的第一光学特性; 通过使用具有与第一曝光光不同的偏振状态的第二曝光光，将像差测量单元的图像转印在涂覆在第二晶片上的第二抗蚀剂膜上，从而获得投影光学系统的第二光学特性; 以及计算第一和第二光学特性之间的差。
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公开(公告)号：US07556896B2
公开(公告)日：2009-07-07
申请号：US11606121
申请日：2006-11-30
申请人： Kazuya Fukuhara , Satoshi Tanaka , Soichi Inoue
发明人： Kazuya Fukuhara , Satoshi Tanaka , Soichi Inoue
IPC分类号： G03F9/00
CPC分类号： G03F7/70566 , G03F7/706
摘要： An inspection method, includes obtaining a first optical characteristic of a projection optical system by transferring an image of an aberration measurement unit of a photomask on a first resist film coated on a first wafer by use of a first polarized exposure light; obtaining a second optical characteristic of the projection optical system by transferring the image of the aberration measurement unit on a second resist film coated on a second wafer by use of a second exposure light having a polarization state different from the first exposure light; and calculating a difference between the first and second optical characteristics.
摘要翻译： 一种检查方法，包括通过使用第一偏振曝光光在涂覆在第一晶片上的第一抗蚀膜上转印光掩模的像差测量单元的图像来获得投影光学系统的第一光学特性; 通过使用具有与第一曝光光不同的偏振状态的第二曝光光，将像差测量单元的图像转印在涂覆在第二晶片上的第二抗蚀剂膜上，从而获得投影光学系统的第二光学特性; 以及计算第一和第二光学特性之间的差。
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公开(公告)号：US20070071306A1
公开(公告)日：2007-03-29
申请号：US11606121
申请日：2006-11-30
申请人： Kazuya Fukuhara , Satoshi Tanaka , Soichi Inoue
发明人： Kazuya Fukuhara , Satoshi Tanaka , Soichi Inoue
CPC分类号： G03F7/70566 , G03F7/706
摘要： An inspection method, includes obtaining a first optical characteristic of a projection optical system by transferring an image of an aberration measurement unit of a photomask on a first resist film coated on a first wafer by use of a first polarized exposure light; obtaining a second optical characteristic of the projection optical system by transferring the image of the aberration measurement unit on a second resist film coated on a second wafer by use of a second exposure light having a polarization state different from the first exposure light; and calculating a difference between the first and second optical characteristics.
摘要翻译： 一种检查方法，包括通过使用第一偏振曝光光在涂覆在第一晶片上的第一抗蚀膜上转印光掩模的像差测量单元的图像来获得投影光学系统的第一光学特性; 通过使用具有与第一曝光光不同的偏振状态的第二曝光光，将像差测量单元的图像转印在涂覆在第二晶片上的第二抗蚀剂膜上，从而获得投影光学系统的第二光学特性; 以及计算第一和第二光学特性之间的差。
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4.发明授权Method of forming contact hole and method of manufacturing semiconductor device 失效形成接触孔的方法和制造半导体器件的方法公开(公告)号：US07148138B2
公开(公告)日：2006-12-12
申请号：US10969996
申请日：2004-10-22
IPC分类号： H01L21/4763
CPC分类号： G03F7/70425 , G03F7/70466 , H01L21/76816
摘要： A method of forming a contact hole on a substrate by using a projection aligner comprising a lighting system including a light source, an aperture, and a condenser lens, a photo mask on which light from the lighting system is incident, and a projection lens for projecting the light from the photo mask onto the substrate, comprises forming a first photosensitive resist film on the substrate; exposing the first photosensitive resist film by using a photo mask in which mask patterns are cyclically arranged in a first direction and a second direction which is orthogonal to the first direction and a first aperture having light transmission parts arranged symmetrically with respect to a center point in the first direction; developing the exposed first photosensitive resist film to form first lines and linear spaces; forming a second photosensitive resist film on the substrate; exposing the second photosensitive resist film by using the photo mask and a second aperture having light transmission parts arranged symmetrically with respect to a center point in the second direction; and developing the second photosensitive resist film to form second lines and linear spaces which are orthogonal to the first lines and linear spaces.
摘要翻译： 一种通过使用包括光源，孔径和聚光透镜的照明系统的投影对准器在基板上形成接触孔的方法，来自照明系统的光入射的光掩模和用于 将来自光掩模的光投射到基板上，包括在基板上形成第一光敏抗蚀剂膜; 通过使用掩模图案沿与第一方向正交的第一方向和第二方向循环布置的光掩模曝光第一光敏抗蚀剂膜，以及具有相对于中心点对称布置的光传输部分的第一孔 第一个方向 显影第一光敏抗蚀剂膜以形成第一线和线性空间; 在所述基板上形成第二光敏抗蚀剂膜; 通过使用光掩模曝光第二光敏抗蚀剂膜，并且具有相对于第二方向的中心点对称布置的透光部分的第二孔; 并显影第二光敏抗蚀剂膜以形成与第一线和线性空间正交的第二线和线性空间。
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5.发明申请Method of forming contact hole and method of manufacturing semiconductor device 失效形成接触孔的方法和制造半导体器件的方法公开(公告)号：US20050153540A1
公开(公告)日：2005-07-14
申请号：US10969996
申请日：2004-10-22
IPC分类号： G03F7/26 , G03F7/20 , H01L21/027 , H01L21/302 , H01L21/3065 , H01L21/461 , H01L21/4763 , H01L21/768
CPC分类号： G03F7/70425 , G03F7/70466 , H01L21/76816
摘要： A method of forming a contact hole on a substrate by using a projection aligner comprising a lighting system including a light source, an aperture, and a condenser lens, a photo mask on which light from the lighting system is incident, and a projection lens for projecting the light from the photo mask onto the substrate, comprises forming a first photosensitive resist film on the substrate; exposing the first photosensitive resist film by using a photo mask in which mask patterns are cyclically arranged in a first direction and a second direction which is orthogonal to the first direction and a first aperture having light transmission parts arranged symmetrically with respect to a center point in the first direction; developing the exposed first photosensitive resist film to form first lines and linear spaces; forming a second photosensitive resist film on the substrate; exposing the second photosensitive resist film by using the photo mask and a second aperture having light transmission parts arranged symmetrically with respect to a center point in the second direction; and developing the second photosensitive resist film to form second lines and linear spaces which are orthogonal to the first lines and linear spaces.
摘要翻译： 一种通过使用包括光源，孔径和聚光透镜的照明系统的投影对准器在基板上形成接触孔的方法，来自照明系统的光入射的光掩模和用于 将来自光掩模的光投射到基板上，包括在基板上形成第一光敏抗蚀剂膜; 通过使用掩模图案沿与第一方向正交的第一方向和第二方向循环布置的光掩模曝光第一光敏抗蚀剂膜，以及具有相对于中心点对称布置的光传输部分的第一孔 第一个方向 显影第一光敏抗蚀剂膜以形成第一线和线性空间; 在所述基板上形成第二光敏抗蚀剂膜; 通过使用光掩模曝光第二光敏抗蚀剂膜，并且具有相对于第二方向的中心点对称布置的透光部分的第二孔; 并显影第二光敏抗蚀剂膜以形成与第一线和线性空间正交的第二线和线性空间。
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6.发明申请EXPOSURE DETERMINING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND COMPUTER PROGRAM PRODUCT 有权曝光测定方法，制造半导体器件的方法和计算机程序产品公开(公告)号：US20110177458A1
公开(公告)日：2011-07-21
申请号：US13007238
申请日：2011-01-14
CPC分类号： G03F7/70425 , G03F7/70558
摘要： According to one embodiment, a deviation amount distribution of a two-dimensional shape parameter between a mask pattern formed on a mask and a desired mask pattern is acquired as a mask pattern map. Such that a deviation amount of the two-dimensional shape parameter between a pattern on substrate formed when the mask is subjected to exposure shot to form a pattern on a substrate and a desired pattern on substrate fits within a predetermined range, an exposure is determined for each position in the exposure shot in forming the pattern on substrate based on the mask pattern map.
摘要翻译： 根据一个实施例，获取形成在掩模上的掩模图案与期望的掩模图案之间的二维形状参数的偏差量分布作为掩模图案图。 使得当在掩模经受曝光拍摄以形成基板上的图案和在基板上形成图案之后形成的基板上的图案之间的二维形状参数的偏移量适合在预定范围内时，确定曝光 基于掩模图案图，在基板上形成图案的曝光中的每个位置。
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7.发明授权Photomask designing method, pattern predicting method and computer program product 失效光掩模设计方法，模式预测方法和计算机程序产品公开(公告)号：US07139998B2
公开(公告)日：2006-11-21
申请号：US10673427
申请日：2003-09-30
IPC分类号： G06F17/50
CPC分类号： G03F1/70
摘要： A photomask designing method used in a lithography process, the lithography process comprises illuminating light on a photomask and converging the light which has passed through the photomask on a photosensitive substrate via a projection optical system, the photomask designing method comprises acquiring a transmittance characteristic of the projection optical system, the characteristic varing depending on a difference in optical paths of light in the projection optical system, the light passing through the projection optical system, and acquiring mask bias of the photomask by use of the transmittance characteristic of the projection optical system.
摘要翻译： 在光刻工艺中使用的光掩模设计方法中，光刻工艺包括在光掩模上照亮光，并通过投影光学系统将已经通过光掩模的光会聚在感光基板上，光掩模设计方法包括获得 投影光学系统，根据投影光学系统中的光的光路差异，穿过投影光学系统的光以及通过投影光学系统的透射特性来获取光掩模的掩模偏置的特征变化。
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公开(公告)号：US07327449B2
公开(公告)日：2008-02-05
申请号：US11806976
申请日：2007-06-05
申请人： Kazuya Fukuhara , Soichi Inoue
发明人： Kazuya Fukuhara , Soichi Inoue
IPC分类号： G01N21/00
CPC分类号： G03F7/70591 , G03F7/70133 , G03F7/70141 , G03F7/70191 , G03F7/706 , G03F7/70641
摘要： An inspection method for an exposure apparatus for illuminating a photomask on a first installation member by an illumination optical system, and for projecting an image of a pattern of the photomask onto a substrate on a second installation member through a projection optical system, the inspection method comprises disposing an inspection photosensitive substrate as the substrate on the second installation member, illuminating a first region which doesn't include a pupil end of the projection optical system and a second region which includes the pupil end of the projection optical system and which isn't overlapped with the first region, in a state in which a surface of the photosensitive substrate and a surface of a secondary light source of the illumination optical system are optically conjugate with each other, and inspecting an illumination axis offset of the exposure apparatus based on a pattern obtained by developing the photosensitive substrate.
摘要翻译： 一种用于通过照明光学系统照射第一安装构件上的光掩模的曝光装置的检查方法，并且用于通过投影光学系统将光掩模的图案的图像投影到第二安装构件上的基板上，检查方法 包括将检查感光基板作为基板设置在第二安装构件上，照亮不包括投影光学系统的光瞳端的第一区域和包括投影光学系统的光瞳端的第二区域， 在光敏基板的表面和照明光学系统的二次光源的表面彼此光学共轭的状态下，与第一区域重叠，并且基于曝光装置的照明轴偏移来检查 通过显影感光基板获得的图案。
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公开(公告)号：US07286216B2
公开(公告)日：2007-10-23
申请号：US10650013
申请日：2003-08-28
申请人： Kazuya Fukuhara , Soichi Inoue
发明人： Kazuya Fukuhara , Soichi Inoue
IPC分类号： G01N21/00
CPC分类号： G03F7/70591 , G03F7/70133 , G03F7/70141 , G03F7/70191 , G03F7/706 , G03F7/70641
摘要： An inspection method for an exposure apparatus for illuminating a photomask on a first installation member by an illumination optical system, and for projecting an image of a pattern of the photomask onto a substrate on a second installation member through a projection optical system, the inspection method comprises disposing an inspection photosensitive substrate as the substrate on the second installation member, illuminating a first region which doesn't include a pupil end of the projection optical system and a second region which includes the pupil end of the projection optical system and which isn't overlapped with the first region, in a state in which a surface of the photosensitive substrate and a surface of a secondary light source of the illumination optical system are optically conjugate with each other, and inspecting an illumination axis offset of the exposure apparatus based on a pattern obtained by developing the photosensitive substrate.
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10.发明授权Exposure determining method, method of manufacturing semiconductor device, and computer program product 有权曝光确定方法，制造半导体器件的方法和计算机程序产品公开(公告)号：US08440376B2
公开(公告)日：2013-05-14
申请号：US13007238
申请日：2011-01-14
CPC分类号： G03F7/70425 , G03F7/70558
摘要： According to one embodiment, a deviation amount distribution of a two-dimensional shape parameter between a mask pattern formed on a mask and a desired mask pattern is acquired as a mask pattern map. Such that a deviation amount of the two-dimensional shape parameter between a pattern on substrate formed when the mask is subjected to exposure shot to form a pattern on a substrate and a desired pattern on substrate fits within a predetermined range, an exposure is determined for each position in the exposure shot in forming the pattern on substrate based on the mask pattern map.
摘要翻译： 根据一个实施例，获取形成在掩模上的掩模图案与期望的掩模图案之间的二维形状参数的偏差量分布作为掩模图案图。 使得当在掩模经受曝光拍摄以形成基板上的图案和在基板上形成图案之后形成的基板上的图案之间的二维形状参数的偏移量适合在预定范围内时，确定曝光 基于掩模图案图，在基板上形成图案的曝光中的每个位置。
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