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1.发明授权Photomask designing method, pattern predicting method and computer program product 失效光掩模设计方法，模式预测方法和计算机程序产品公开(公告)号：US07139998B2
公开(公告)日：2006-11-21
申请号：US10673427
申请日：2003-09-30
IPC分类号： G06F17/50
CPC分类号： G03F1/70
摘要： A photomask designing method used in a lithography process, the lithography process comprises illuminating light on a photomask and converging the light which has passed through the photomask on a photosensitive substrate via a projection optical system, the photomask designing method comprises acquiring a transmittance characteristic of the projection optical system, the characteristic varing depending on a difference in optical paths of light in the projection optical system, the light passing through the projection optical system, and acquiring mask bias of the photomask by use of the transmittance characteristic of the projection optical system.
摘要翻译： 在光刻工艺中使用的光掩模设计方法中，光刻工艺包括在光掩模上照亮光，并通过投影光学系统将已经通过光掩模的光会聚在感光基板上，光掩模设计方法包括获得 投影光学系统，根据投影光学系统中的光的光路差异，穿过投影光学系统的光以及通过投影光学系统的透射特性来获取光掩模的掩模偏置的特征变化。
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公开(公告)号：US20060001846A1
公开(公告)日：2006-01-05
申请号：US11170165
申请日：2005-06-30
申请人： Takuya Kono , Tatsuhiko Higashiki , Takashi Sato , Shoji Mimotogi , Soichi Inoue
发明人： Takuya Kono , Tatsuhiko Higashiki , Takashi Sato , Shoji Mimotogi , Soichi Inoue
IPC分类号： G03B27/00
CPC分类号： G03F7/70625
摘要： An exposure system includes a simulator speculating first and second calculated doses to project first and second reference marks onto first and second resist films, respectively, an exposure tool projecting the first reference mark onto the first resist film at test doses to form test resist patterns, a choose module choosing an optimum pattern among the test resist patterns and choosing a first optimum dose used for the optimum pattern, and a dose calculator calculating a second optimum dose for the second reference mark by correcting the first optimum dose based on the first and the second calculated doses.
摘要翻译： 曝光系统包括模拟器，分别将第一和第二参考标记分别投影到第一和第二抗蚀剂膜上的第一和第二计算剂量，曝光工具以测试剂量将第一参考标记投影到第一抗蚀剂膜上以形成测试抗蚀图案， 选择模块，在测试抗蚀剂图案中选择最佳图案，并选择用于最佳图案的第一最佳剂量;以及剂量计算器，通过基于第一和第二图像校正第一最佳剂量来计算第二参考标记的第二最佳剂量 秒计算剂量。
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3.发明授权Method for manufacturing a semiconductor device and apparatus for manufacturing a semiconductor device 失效半导体装置的制造方法以及半导体装置的制造装置公开(公告)号：US07018932B2
公开(公告)日：2006-03-28
申请号：US10377597
申请日：2003-03-04
IPC分类号： H01L21/027 , G03F9/00
CPC分类号： G03F7/70625 , G03F7/70633 , G03F7/70641 , G03F7/70675 , H01J2237/30438
摘要： A method for manufacturing a semiconductor device including, forming a photosensitive-film on a substrate, carrying the substrate on which the photosensitive-film is formed, to an exposure device provided with a mask in which an on-mask-inspection-mark and an on-mask-device-pattern are formed, selectively exposing the photosensitive-film to light to transfer the on-mask-inspection-mark to the photosensitive-film to form a latent-image of the inspection-mark on the photosensitive-film, heating at least that area of the photosensitive-film in which the latent-image of the inspection-mark is formed, measuring the inspection-mark, changing set-values for the exposure device used for the selective exposure, on the basis of result of the measurement so that exposure conditions conform to the set-values, exposing the photosensitive-film on the basis of the changed set-values to transfer the on-mask-device-pattern to the photosensitive-film to form a latent image of the device-pattern on the photosensitive-film, heating an entire surface of the photosensitive-film, and developing the photosensitive-film.
摘要翻译： 一种半导体器件的制造方法，其特征在于，在将基板上形成有感光膜的基板上形成感光膜的制造方法，设置在具有掩模检查标记和掩模检查标记的掩模的曝光装置 形成掩模装置图案，选择性地将感光膜曝光以将掩模检查标记转印到感光膜上，以在感光膜上形成检查标记的潜像， 至少加热其中形成有检查标记的潜像的感光膜的面积，测量检查标记，改变用于选择性曝光的曝光装置的设定值，基于 所述测量使得曝光条件符合设定值，基于改变的设定值曝光感光膜以将掩模设备图案转印到感光膜上以形成该设备的潜像 p图案在p 感光膜，加热感光膜的整个表面，并显影感光膜。
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4.发明申请EXPOSURE DETERMINING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND COMPUTER PROGRAM PRODUCT 有权曝光测定方法，制造半导体器件的方法和计算机程序产品公开(公告)号：US20110177458A1
公开(公告)日：2011-07-21
申请号：US13007238
申请日：2011-01-14
CPC分类号： G03F7/70425 , G03F7/70558
摘要： According to one embodiment, a deviation amount distribution of a two-dimensional shape parameter between a mask pattern formed on a mask and a desired mask pattern is acquired as a mask pattern map. Such that a deviation amount of the two-dimensional shape parameter between a pattern on substrate formed when the mask is subjected to exposure shot to form a pattern on a substrate and a desired pattern on substrate fits within a predetermined range, an exposure is determined for each position in the exposure shot in forming the pattern on substrate based on the mask pattern map.
摘要翻译： 根据一个实施例，获取形成在掩模上的掩模图案与期望的掩模图案之间的二维形状参数的偏差量分布作为掩模图案图。 使得当在掩模经受曝光拍摄以形成基板上的图案和在基板上形成图案之后形成的基板上的图案之间的二维形状参数的偏移量适合在预定范围内时，确定曝光 基于掩模图案图，在基板上形成图案的曝光中的每个位置。
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公开(公告)号：US07186485B2
公开(公告)日：2007-03-06
申请号：US10615228
申请日：2003-07-09
申请人： Kazuya Fukuhara , Satoshi Tanaka , Soichi Inoue
发明人： Kazuya Fukuhara , Satoshi Tanaka , Soichi Inoue
CPC分类号： G03F7/70566 , G03F7/706
摘要： An inspection method, includes obtaining a first optical characteristic of a projection optical system by transferring an image of an aberration measurement unit of a photomask on a first resist film coated on a first wafer by use of a first polarized exposure light; obtaining a second optical characteristic of the projection optical system by transferring the image of the aberration measurement unit on a second resist film coated on a second wafer by use of a second exposure light having a polarization state different from the first exposure light; and calculating a difference between the first and second optical characteristics.
摘要翻译： 一种检查方法，包括通过使用第一偏振曝光光在涂覆在第一晶片上的第一抗蚀膜上转印光掩模的像差测量单元的图像来获得投影光学系统的第一光学特性; 通过使用具有与第一曝光光不同的偏振状态的第二曝光光，将像差测量单元的图像转印在涂覆在第二晶片上的第二抗蚀剂膜上，从而获得投影光学系统的第二光学特性; 以及计算第一和第二光学特性之间的差。
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公开(公告)号：US07556896B2
公开(公告)日：2009-07-07
申请号：US11606121
申请日：2006-11-30
申请人： Kazuya Fukuhara , Satoshi Tanaka , Soichi Inoue
发明人： Kazuya Fukuhara , Satoshi Tanaka , Soichi Inoue
IPC分类号： G03F9/00
CPC分类号： G03F7/70566 , G03F7/706
摘要： An inspection method, includes obtaining a first optical characteristic of a projection optical system by transferring an image of an aberration measurement unit of a photomask on a first resist film coated on a first wafer by use of a first polarized exposure light; obtaining a second optical characteristic of the projection optical system by transferring the image of the aberration measurement unit on a second resist film coated on a second wafer by use of a second exposure light having a polarization state different from the first exposure light; and calculating a difference between the first and second optical characteristics.
摘要翻译： 一种检查方法，包括通过使用第一偏振曝光光在涂覆在第一晶片上的第一抗蚀膜上转印光掩模的像差测量单元的图像来获得投影光学系统的第一光学特性; 通过使用具有与第一曝光光不同的偏振状态的第二曝光光，将像差测量单元的图像转印在涂覆在第二晶片上的第二抗蚀剂膜上，从而获得投影光学系统的第二光学特性; 以及计算第一和第二光学特性之间的差。
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公开(公告)号：US07327449B2
公开(公告)日：2008-02-05
申请号：US11806976
申请日：2007-06-05
申请人： Kazuya Fukuhara , Soichi Inoue
发明人： Kazuya Fukuhara , Soichi Inoue
IPC分类号： G01N21/00
CPC分类号： G03F7/70591 , G03F7/70133 , G03F7/70141 , G03F7/70191 , G03F7/706 , G03F7/70641
摘要： An inspection method for an exposure apparatus for illuminating a photomask on a first installation member by an illumination optical system, and for projecting an image of a pattern of the photomask onto a substrate on a second installation member through a projection optical system, the inspection method comprises disposing an inspection photosensitive substrate as the substrate on the second installation member, illuminating a first region which doesn't include a pupil end of the projection optical system and a second region which includes the pupil end of the projection optical system and which isn't overlapped with the first region, in a state in which a surface of the photosensitive substrate and a surface of a secondary light source of the illumination optical system are optically conjugate with each other, and inspecting an illumination axis offset of the exposure apparatus based on a pattern obtained by developing the photosensitive substrate.
摘要翻译： 一种用于通过照明光学系统照射第一安装构件上的光掩模的曝光装置的检查方法，并且用于通过投影光学系统将光掩模的图案的图像投影到第二安装构件上的基板上，检查方法 包括将检查感光基板作为基板设置在第二安装构件上，照亮不包括投影光学系统的光瞳端的第一区域和包括投影光学系统的光瞳端的第二区域， 在光敏基板的表面和照明光学系统的二次光源的表面彼此光学共轭的状态下，与第一区域重叠，并且基于曝光装置的照明轴偏移来检查 通过显影感光基板获得的图案。
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公开(公告)号：US07286216B2
公开(公告)日：2007-10-23
申请号：US10650013
申请日：2003-08-28
申请人： Kazuya Fukuhara , Soichi Inoue
发明人： Kazuya Fukuhara , Soichi Inoue
IPC分类号： G01N21/00
CPC分类号： G03F7/70591 , G03F7/70133 , G03F7/70141 , G03F7/70191 , G03F7/706 , G03F7/70641
摘要： An inspection method for an exposure apparatus for illuminating a photomask on a first installation member by an illumination optical system, and for projecting an image of a pattern of the photomask onto a substrate on a second installation member through a projection optical system, the inspection method comprises disposing an inspection photosensitive substrate as the substrate on the second installation member, illuminating a first region which doesn't include a pupil end of the projection optical system and a second region which includes the pupil end of the projection optical system and which isn't overlapped with the first region, in a state in which a surface of the photosensitive substrate and a surface of a secondary light source of the illumination optical system are optically conjugate with each other, and inspecting an illumination axis offset of the exposure apparatus based on a pattern obtained by developing the photosensitive substrate.
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9.发明授权Exposure determining method, method of manufacturing semiconductor device, and computer program product 有权曝光确定方法，制造半导体器件的方法和计算机程序产品公开(公告)号：US08440376B2
公开(公告)日：2013-05-14
申请号：US13007238
申请日：2011-01-14
CPC分类号： G03F7/70425 , G03F7/70558
摘要： According to one embodiment, a deviation amount distribution of a two-dimensional shape parameter between a mask pattern formed on a mask and a desired mask pattern is acquired as a mask pattern map. Such that a deviation amount of the two-dimensional shape parameter between a pattern on substrate formed when the mask is subjected to exposure shot to form a pattern on a substrate and a desired pattern on substrate fits within a predetermined range, an exposure is determined for each position in the exposure shot in forming the pattern on substrate based on the mask pattern map.
摘要翻译： 根据一个实施例，获取形成在掩模上的掩模图案与期望的掩模图案之间的二维形状参数的偏差量分布作为掩模图案图。 使得当在掩模经受曝光拍摄以形成基板上的图案和在基板上形成图案之后形成的基板上的图案之间的二维形状参数的偏移量适合在预定范围内时，确定曝光 基于掩模图案图，在基板上形成图案的曝光中的每个位置。
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公开(公告)号：US20070071306A1
公开(公告)日：2007-03-29
申请号：US11606121
申请日：2006-11-30
申请人： Kazuya Fukuhara , Satoshi Tanaka , Soichi Inoue
发明人： Kazuya Fukuhara , Satoshi Tanaka , Soichi Inoue
CPC分类号： G03F7/70566 , G03F7/706
摘要： An inspection method, includes obtaining a first optical characteristic of a projection optical system by transferring an image of an aberration measurement unit of a photomask on a first resist film coated on a first wafer by use of a first polarized exposure light; obtaining a second optical characteristic of the projection optical system by transferring the image of the aberration measurement unit on a second resist film coated on a second wafer by use of a second exposure light having a polarization state different from the first exposure light; and calculating a difference between the first and second optical characteristics.
摘要翻译： 一种检查方法，包括通过使用第一偏振曝光光在涂覆在第一晶片上的第一抗蚀膜上转印光掩模的像差测量单元的图像来获得投影光学系统的第一光学特性; 通过使用具有与第一曝光光不同的偏振状态的第二曝光光，将像差测量单元的图像转印在涂覆在第二晶片上的第二抗蚀剂膜上，从而获得投影光学系统的第二光学特性; 以及计算第一和第二光学特性之间的差。
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