Process for producing pressure-sensitive electroconductive sheet
    1.
    发明授权
    Process for producing pressure-sensitive electroconductive sheet 失效
    制造压敏导电片的方法

    公开(公告)号:US4790968A

    公开(公告)日:1988-12-13

    申请号:US916338

    申请日:1986-10-07

    摘要: A process (I), for producing a pressure-sensitive electroconductive sheet by (A), forming conductive circuits or electrodes in a flexible porous substrate and (B), applying, followed by curing a pressure-sensitive conductive paste to either or both sides of the substrate to form a pressure-sensitive conductive layer; and a process (II) for producing a pressure-sensitive electroconductive sheet by (A), forming conductive circuits or electrodes in a flexible porous subhstrate, (B), subsequently applying, followed by curing, a pressure-sensitive conductive paste to either side of the substrate to form a pressure-sensitive conductive layer, and (C), applying, followed by curing, insulating silicone rubber to the side of the substrate on which the pressure-sensitive conductive layer is not formed to form an insulating silicone rubber layer.

    摘要翻译: 一种用于通过(A)制造压敏导电片的方法(I),在柔性多孔基材中形成导电电路或电极,(B)施加,然后将压敏导电膏固化到两面或两面 以形成压敏导电层; (A)中制造压敏导电片的方法(II),在柔性多孔基底中形成导电电路或电极,(B),然后将压敏导电膏施加到任一侧 的基板以形成压敏导电层,(C)在不形成压敏导电层的基板的一侧涂布硅橡胶,然后固化,从而形成绝缘的硅橡胶层 。

    Battery
    3.
    发明授权
    Battery 有权
    电池

    公开(公告)号:US07879497B2

    公开(公告)日:2011-02-01

    申请号:US11704341

    申请日:2007-02-09

    IPC分类号: H01M4/80

    摘要: A battery is adapted such that a nickel hydroxide particle group constituted of a number of nickel hydroxide particles filled in a void part of a positive electrode substrate contains, at a ratio of 15 wt % or less, small-diameter nickel hydroxide particles each having a particle diameter of 5 μm or less. The positive electrode substrate is configured such that a front-surface-side nickel layer and a back-surface-side nickel layer are made larger in thickness than a middle nickel layer, and an average thickness B of either the front-surface-side nickel layer or the back-surface-side nickel layer, which is thicker one, and an average thickness C of the middle nickel layer satisfy a relation of C/B≧0.6.

    摘要翻译: 电池适于使得由填充在正极基板的空隙部分中的多个氢氧化镍颗粒构成的氢氧化镍颗粒组以15重量%以下的比例含有小直径的氢氧化镍颗粒, 粒径为5μm以下。 正极基板被构造成使得前表面侧镍层和背表面侧镍层的厚度比中间镍层厚,并且前表面侧镍层的平均厚度B 层或背面侧镍层,其中较厚的中间镍层的平均厚度C满足C /B≥0.6的关系。

    III/V GROUP NITRIDE SEMICONDUCTOR, PHOTOCATALYTIC SEMICONDUCTOR DEVICE, PHOTOCATALYTIC OXIDATION-REDUCTION REACTION APPARATUS AND EXECUTION PROCESS OF PHOTOELECTROCHEMICAL REACTION
    5.
    发明申请
    III/V GROUP NITRIDE SEMICONDUCTOR, PHOTOCATALYTIC SEMICONDUCTOR DEVICE, PHOTOCATALYTIC OXIDATION-REDUCTION REACTION APPARATUS AND EXECUTION PROCESS OF PHOTOELECTROCHEMICAL REACTION 审中-公开
    III / V族氮化物半导体,光电子半导体器件,光催化氧化还原反应装置和光电化学反应的执行过程

    公开(公告)号:US20090045072A1

    公开(公告)日:2009-02-19

    申请号:US12066069

    申请日:2006-09-06

    IPC分类号: C25B1/00 C01B21/00 C25B9/00

    摘要: Provided are a III/V group nitride semiconductor causing an oxidation-reduction reaction at a high photoconversion efficiency by irradiation of light, a photocatalytic semiconductor device, a photocatalytic oxidation-reduction reaction apparatus, and an execution process of a photoelectrochemical reaction.In the III/V group nitride semiconductor, the full width at half maximum of an X-ray rocking curve on a catalytic reaction surface thereof is 400 arcsec or less, and a carrier density in a surface layer portion having the catalytic reaction surface is 1.5×1016 cm−3 or more, but 3.0×1018 cm−3 or less. The photocatalytic semiconductor device has the III/V group nitride semiconductor laminated on a substrate. In the photocatalytic oxidation-reduction reaction apparatus, one electrode of a pair of electrodes for electrolysis, which are electrically connected to each other in a state brought into contact with an electrolyte, is composed of the III/V group nitride semiconductor, and a catalytic reaction surface making up the III/V group nitride semiconductor is irradiated with light, thereby causing an oxidation reaction or reduction reaction on the catalytic reaction surface.

    摘要翻译: 提供一种III / V族氮化物半导体,通过光照射,光催化半导体器件,光催化氧化还原反应设备和光电化学反应的执行过程,在光转换效率高的光转换效率下进行氧化还原反应。 在III / V族氮化物半导体中,催化反应面的X射线摇摆曲线的半峰全宽为400arcsec以下,具有催化反应面的表层部的载流子密度为1.5 x1016cm -3以上,3.0×10 18 cm -3以下。 光催化半导体器件具有层叠在基板上的III / V族氮化物半导体。 在光催化氧化还原反应装置中,在与电解质接触的状态下电连接的一对电极的一个电极由III / V族氮化物半导体和催化剂 对构成III / V族氮化物半导体的反应面进行光照射,从而在催化反应面上发生氧化反应或还原反应。

    Nonlinear optical thin-film
    6.
    发明授权
    Nonlinear optical thin-film 失效
    非线性光学薄膜

    公开(公告)号:US5079594A

    公开(公告)日:1992-01-07

    申请号:US543583

    申请日:1990-06-26

    IPC分类号: G02F1/35 G02F1/355 G02F1/361

    CPC分类号: B82Y20/00 G02F1/3556

    摘要: Nonlinear optical thin-films are disclosed. The nonlinear optical thin-film is comprised of a substrate, superlattice thin films formed separated on the surface of the substrate and a cover thin film of an insulating material or a semiconductor which covers the surface of the substrate on which the superlattice thin films are formed. Each superlattice thin film is formed by depositing two kinds of semiconductors having different band-gap energies alternatively.

    摘要翻译: 公开了非线性光学薄膜。 非线性光学薄膜由衬底,在衬底的表面上形成的超晶格薄膜和覆盖形成超晶格薄膜的衬底的表面的绝缘材料或半导体的覆盖薄膜组成 。 每个超晶格薄膜通过交替地沉积具有不同带隙能的两种半导体形成。

    Battery
    8.
    发明申请
    Battery 有权
    电池

    公开(公告)号:US20070224512A1

    公开(公告)日:2007-09-27

    申请号:US11704341

    申请日:2007-02-09

    IPC分类号: H01M4/80 H01M4/66 H01M4/52

    摘要: A battery is adapted such that a nickel hydroxide particle group constituted of a number of nickel hydroxide particles filled in a void part of a positive electrode substrate contains, at a ratio of 15 wt % or less, small-diameter nickel hydroxide particles each having a particle diameter of 5 μm or less. The positive electrode substrate is configured such that a front-surface-side nickel layer and a back-surface-side nickel layer are made larger in thickness than a middle nickel layer, and an average thickness B of either the front-surface-side nickel layer or the back-surface-side nickel layer, which is thicker one, and an average thickness C of the middle nickel layer satisfy a relation of C/B≧0.6.

    摘要翻译: 电池适于使得由填充在正极基板的空隙部分中的多个氢氧化镍颗粒构成的氢氧化镍颗粒组以15重量%以下的比例含有小直径的氢氧化镍颗粒, 粒径为5μm以下。 正极基板被构造成使得前表面侧镍层和背表面侧镍层的厚度比中间镍层厚,并且前表面侧镍层的平均厚度B 层或背面侧镍层,中间镍层的平均厚度C满足C / B> = 0.6的关系。

    Method of controlling charge and discharge of secondary battery for automatic guided vehicle
    9.
    发明授权
    Method of controlling charge and discharge of secondary battery for automatic guided vehicle 有权
    控制自动引导车辆二次电池充放电的方法

    公开(公告)号:US07193394B2

    公开(公告)日:2007-03-20

    申请号:US10856535

    申请日:2004-05-28

    IPC分类号: H01M10/44

    摘要: To provide a method of controlling charge and discharge of a secondary battery for automatic guided vehicle that can decide the timing of refresh charge and discharge accurately and minimize the frequency of refresh charge and discharge. The method of controlling charge and discharge of a secondary battery for automatic guided vehicle comprises a first discharge step of making the secondary battery drive an automatic guided vehicle and discharge electricity with a predetermined amount; a voltage measurement step of measuring a discharge end voltage of the secondary battery at the completion of the first discharge step; and a charge step of performing a first charge step of charging the secondary battery incompletely at a first charging current value when the discharge end voltage is higher than a preset minimum voltage, and performing a second charge step of discharging the secondary battery fully and then charging the secondary battery fully at a second charging current value smaller than the first charging current value when the discharge end voltage equals the preset minimum voltage or less.

    摘要翻译: 提供一种控制自动引导车辆的二次电池的充放电的方法,其可以精确地决定刷新充电和放电的定时,并使刷新充电和放电的频率最小化。 用于控制自动引导车辆的二次电池的充放电的方法包括:使二次电池驱动自动引导车并以预定量放电的第一排放步骤; 电压测量步骤,在第一放电步骤完成时测量二次电池的放电终止电压; 以及充电步骤,当放电结束电压高于预设的最小电压时,执行以第一充电电流值不充分地对二次电池充电的第一充电步骤,并且执行第二充电步骤,将二次电池充满电并然后充电 当放电结束电压等于预设的最小电压或更小时,二次电池完全处于比第一充电电流值小的第二充电电流值。