Image processing apparatus, image processing method, and non-transitory computer readable medium that includes plural page description language (PDL) processing units and a job management unit
    2.
    发明授权
    Image processing apparatus, image processing method, and non-transitory computer readable medium that includes plural page description language (PDL) processing units and a job management unit 有权
    图像处理装置,图像处理方法以及包含多个页面描述语言(PDL)处理单元和作业管理单元的非暂时性计算机可读介质

    公开(公告)号:US08699047B2

    公开(公告)日:2014-04-15

    申请号:US13474316

    申请日:2012-05-17

    申请人: Kazuhiro Ohkawa

    发明人: Kazuhiro Ohkawa

    IPC分类号: G06F3/12

    CPC分类号: G06K15/1813 G06K15/1817

    摘要: An image processing apparatus includes plural page description language processing units and a job management unit. Each of the page description language processing units corresponds to one of different page description languages. The job management unit performs management to select one of the page description language processing units, the selected page description language processing unit serving as a currently processing page description language processing unit, and to cause only the currently processing page description language processing unit to process a print job. Each of the page description language processing units includes a raster image creating unit and a raster image transferring unit. The job management unit includes a first queue, a second queue, a reception-time adding unit, an image-creation-time adding unit, a first instruction unit, a second instruction unit, a third instruction unit, a controller, and a job-being-processed list memory.

    摘要翻译: 图像处理装置包括多个页面描述语言处理单元和作业管理单元。 每个页面描述语言处理单元对应于不同页面描述语言之一。 作业管理单元执行管理以选择页面描述语言处理单元之一,所选择的页面描述语言处理单元作为当前处理页面描述语言处理单元,并且仅使当前处理页面描述语言处理单元处理 打印作业 每个页面描述语言处理单元包括光栅图像创建单元和光栅图像传送单元。 作业管理单元包括第一队列,第二队列,接收时添加单元,图像创建时添加单元,第一指令单元,第二指令单元,第三指令单元,控制器和作业 - 处理列表内存。

    IMAGE PROCESSING APPARATUS, IMAGE PROCESSING METHOD, AND COMPUTER READABLE MEDIUM
    3.
    发明申请
    IMAGE PROCESSING APPARATUS, IMAGE PROCESSING METHOD, AND COMPUTER READABLE MEDIUM 有权
    图像处理设备,图像处理方法和计算机可读介质

    公开(公告)号:US20130070292A1

    公开(公告)日:2013-03-21

    申请号:US13474316

    申请日:2012-05-17

    申请人: Kazuhiro OHKAWA

    发明人: Kazuhiro OHKAWA

    IPC分类号: G06K15/02

    CPC分类号: G06K15/1813 G06K15/1817

    摘要: An image processing apparatus includes plural page description language processing units and a job management unit. Each of the page description language processing units corresponds to one of different page description languages. The job management unit performs management to select one of the page description language processing units, the selected page description language processing unit serving as a currently processing page description language processing unit, and to cause only the currently processing page description language processing unit to process a print job. Each of the page description language processing units includes a raster image creating unit and a raster image transferring unit. The job management unit includes a first queue, a second queue, a reception-time adding unit, an image-creation-time adding unit, a first instruction unit, a second instruction unit, a third instruction unit, a controller, and a job-being-processed list memory.

    摘要翻译: 图像处理装置包括多个页面描述语言处理单元和作业管理单元。 每个页面描述语言处理单元对应于不同页面描述语言之一。 作业管理单元执行管理以选择页面描述语言处理单元之一,所选择的页面描述语言处理单元作为当前处理页面描述语言处理单元,并且仅使当前处理页面描述语言处理单元处理 打印作业 每个页面描述语言处理单元包括光栅图像创建单元和光栅图像传送单元。 作业管理单元包括第一队列,第二队列,接收时添加单元,图像创建时添加单元,第一指令单元,第二指令单元,第三指令单元,控制器和作业 - 处理列表内存。

    SEMICONDUCTOR DEVICE, FABRICATION METHOD OF THE SEMICONDUCTOR DEVICES
    4.
    发明申请
    SEMICONDUCTOR DEVICE, FABRICATION METHOD OF THE SEMICONDUCTOR DEVICES 审中-公开
    半导体器件,半导体器件的制造方法

    公开(公告)号:US20110073995A1

    公开(公告)日:2011-03-31

    申请号:US12877052

    申请日:2010-09-07

    IPC分类号: H01L29/20 H01L21/20

    摘要: In a semiconductor device, a YAG substrate is formed as a single-crystal substrate of any of surface orientations (100), (110), and (111). In the fabrication of the semiconductor device, a TMAl gas is first fed onto the YAG substrate so as to form a nucleation layer made of aluminum, which is a group-III element. Then, an NH3 gas is fed onto the nucleation layer. This turns the surface of the nucleation layer into a group-V element and then forms a group-III-V compound layer of AlN. Then, a mixed gas of TMAl gas and NH3 gas is fed onto the group-III-V compound layer so as to form another group-III-V compound layer. Finally, a group-III nitride semiconductor layer is crystal-grown on the group-III compound layer.

    摘要翻译: 在半导体器件中,YAG衬底形成为任何表面取向(100),(110)和(111)的单晶衬底。 在半导体器件的制造中,首先将TMAl气体馈送到YAG衬底上,以形成由III族元素构成的铝成核层。 然后,将NH 3气体送入成核层。 这使得成核层的表面成为V族元素,然后形成Al-III-V族化合物层。 然后,将TMAl气体和NH 3气体的混合气体供给到III-V族化合物层上,形成另一组III-V族化合物层。 最后,III族氮化物半导体层在III族化合物层上晶体生长。

    Positive Electrode for Alkaline Storage Battery and Alkaline Storage Battery
    5.
    发明申请
    Positive Electrode for Alkaline Storage Battery and Alkaline Storage Battery 审中-公开
    碱性电池和碱性蓄电池正极

    公开(公告)号:US20080318125A1

    公开(公告)日:2008-12-25

    申请号:US11658661

    申请日:2005-07-21

    CPC分类号: H01M4/667 H01M4/32 H01M4/52

    摘要: There are provided a low-cost positive electrode for an alkaline storage battery which retains an excellent current collectivity over a long period of time and a low-cost alkaline storage battery which retains an excellent charge/discharge efficiency over a long period of time. A positive electrode for an alkaline storage battery according to the present invention has a positive electrode substrate including a resin skeleton made of a resin and having a three-dimensional network structure and a nickel coating layer made of nickel and coating the resin skeleton and also having a void portion in which a plurality of pores are coupled in three dimensions and a positive electrode active material containing nickel hydroxide particles and filled in the void portion of the positive electrode substrate. Among them, the nickel coating layer has an average thickness of not less than 0.5 μm and not more than 5 μm. The proportion of the nickel coating layer to the positive electrode substrate is not less than 30 wt % and not more than 80 wt %. The filling amount of the positive electrode active material is not less than 3 times and not more than 10 times the weight of the positive electrode substrate.

    摘要翻译: 本发明提供了一种用于碱性蓄电池的低成本正电极,其长期保持优异的集流性,并且在长时间内保持了优异的充放电效率的低成本碱性蓄电池。 本发明的碱性蓄电池用正极具有包含由树脂构成的树脂骨架的正极基板,具有三维网状结构,由镍构成的镍覆盖层涂覆树脂骨架,并且还具有 其中多个孔三维结合的空隙部分和含有氢氧化镍颗粒的正极活性材料并填充在正极基板的空隙部分中。 其中,镍镀层的平均厚度为0.5μm以上5μm以下。 镍镀层与正极基板的比例为30重量%以上且80重量%以下。 正极活性物质的填充量不小于正极基板的重量的3倍以上10倍以下。

    Battery
    6.
    发明授权
    Battery 有权
    电池

    公开(公告)号:US07879497B2

    公开(公告)日:2011-02-01

    申请号:US11704341

    申请日:2007-02-09

    IPC分类号: H01M4/80

    摘要: A battery is adapted such that a nickel hydroxide particle group constituted of a number of nickel hydroxide particles filled in a void part of a positive electrode substrate contains, at a ratio of 15 wt % or less, small-diameter nickel hydroxide particles each having a particle diameter of 5 μm or less. The positive electrode substrate is configured such that a front-surface-side nickel layer and a back-surface-side nickel layer are made larger in thickness than a middle nickel layer, and an average thickness B of either the front-surface-side nickel layer or the back-surface-side nickel layer, which is thicker one, and an average thickness C of the middle nickel layer satisfy a relation of C/B≧0.6.

    摘要翻译: 电池适于使得由填充在正极基板的空隙部分中的多个氢氧化镍颗粒构成的氢氧化镍颗粒组以15重量%以下的比例含有小直径的氢氧化镍颗粒, 粒径为5μm以下。 正极基板被构造成使得前表面侧镍层和背表面侧镍层的厚度比中间镍层厚,并且前表面侧镍层的平均厚度B 层或背面侧镍层,其中较厚的中间镍层的平均厚度C满足C /B≥0.6的关系。

    III/V GROUP NITRIDE SEMICONDUCTOR, PHOTOCATALYTIC SEMICONDUCTOR DEVICE, PHOTOCATALYTIC OXIDATION-REDUCTION REACTION APPARATUS AND EXECUTION PROCESS OF PHOTOELECTROCHEMICAL REACTION
    8.
    发明申请
    III/V GROUP NITRIDE SEMICONDUCTOR, PHOTOCATALYTIC SEMICONDUCTOR DEVICE, PHOTOCATALYTIC OXIDATION-REDUCTION REACTION APPARATUS AND EXECUTION PROCESS OF PHOTOELECTROCHEMICAL REACTION 审中-公开
    III / V族氮化物半导体,光电子半导体器件,光催化氧化还原反应装置和光电化学反应的执行过程

    公开(公告)号:US20090045072A1

    公开(公告)日:2009-02-19

    申请号:US12066069

    申请日:2006-09-06

    IPC分类号: C25B1/00 C01B21/00 C25B9/00

    摘要: Provided are a III/V group nitride semiconductor causing an oxidation-reduction reaction at a high photoconversion efficiency by irradiation of light, a photocatalytic semiconductor device, a photocatalytic oxidation-reduction reaction apparatus, and an execution process of a photoelectrochemical reaction.In the III/V group nitride semiconductor, the full width at half maximum of an X-ray rocking curve on a catalytic reaction surface thereof is 400 arcsec or less, and a carrier density in a surface layer portion having the catalytic reaction surface is 1.5×1016 cm−3 or more, but 3.0×1018 cm−3 or less. The photocatalytic semiconductor device has the III/V group nitride semiconductor laminated on a substrate. In the photocatalytic oxidation-reduction reaction apparatus, one electrode of a pair of electrodes for electrolysis, which are electrically connected to each other in a state brought into contact with an electrolyte, is composed of the III/V group nitride semiconductor, and a catalytic reaction surface making up the III/V group nitride semiconductor is irradiated with light, thereby causing an oxidation reaction or reduction reaction on the catalytic reaction surface.

    摘要翻译: 提供一种III / V族氮化物半导体,通过光照射,光催化半导体器件,光催化氧化还原反应设备和光电化学反应的执行过程,在光转换效率高的光转换效率下进行氧化还原反应。 在III / V族氮化物半导体中,催化反应面的X射线摇摆曲线的半峰全宽为400arcsec以下,具有催化反应面的表层部的载流子密度为1.5 x1016cm -3以上,3.0×10 18 cm -3以下。 光催化半导体器件具有层叠在基板上的III / V族氮化物半导体。 在光催化氧化还原反应装置中,在与电解质接触的状态下电连接的一对电极的一个电极由III / V族氮化物半导体和催化剂 对构成III / V族氮化物半导体的反应面进行光照射,从而在催化反应面上发生氧化反应或还原反应。

    Nonlinear optical thin-film
    9.
    发明授权
    Nonlinear optical thin-film 失效
    非线性光学薄膜

    公开(公告)号:US5079594A

    公开(公告)日:1992-01-07

    申请号:US543583

    申请日:1990-06-26

    IPC分类号: G02F1/35 G02F1/355 G02F1/361

    CPC分类号: B82Y20/00 G02F1/3556

    摘要: Nonlinear optical thin-films are disclosed. The nonlinear optical thin-film is comprised of a substrate, superlattice thin films formed separated on the surface of the substrate and a cover thin film of an insulating material or a semiconductor which covers the surface of the substrate on which the superlattice thin films are formed. Each superlattice thin film is formed by depositing two kinds of semiconductors having different band-gap energies alternatively.

    摘要翻译: 公开了非线性光学薄膜。 非线性光学薄膜由衬底,在衬底的表面上形成的超晶格薄膜和覆盖形成超晶格薄膜的衬底的表面的绝缘材料或半导体的覆盖薄膜组成 。 每个超晶格薄膜通过交替地沉积具有不同带隙能的两种半导体形成。

    Process for producing pressure-sensitive electroconductive sheet
    10.
    发明授权
    Process for producing pressure-sensitive electroconductive sheet 失效
    制造压敏导电片的方法

    公开(公告)号:US4790968A

    公开(公告)日:1988-12-13

    申请号:US916338

    申请日:1986-10-07

    摘要: A process (I), for producing a pressure-sensitive electroconductive sheet by (A), forming conductive circuits or electrodes in a flexible porous substrate and (B), applying, followed by curing a pressure-sensitive conductive paste to either or both sides of the substrate to form a pressure-sensitive conductive layer; and a process (II) for producing a pressure-sensitive electroconductive sheet by (A), forming conductive circuits or electrodes in a flexible porous subhstrate, (B), subsequently applying, followed by curing, a pressure-sensitive conductive paste to either side of the substrate to form a pressure-sensitive conductive layer, and (C), applying, followed by curing, insulating silicone rubber to the side of the substrate on which the pressure-sensitive conductive layer is not formed to form an insulating silicone rubber layer.

    摘要翻译: 一种用于通过(A)制造压敏导电片的方法(I),在柔性多孔基材中形成导电电路或电极,(B)施加,然后将压敏导电膏固化到两面或两面 以形成压敏导电层; (A)中制造压敏导电片的方法(II),在柔性多孔基底中形成导电电路或电极,(B),然后将压敏导电膏施加到任一侧 的基板以形成压敏导电层,(C)在不形成压敏导电层的基板的一侧涂布硅橡胶,然后固化,从而形成绝缘的硅橡胶层 。