公开(公告)号：US20200091334A1

公开(公告)日：2020-03-19

申请号：US16278838

申请日：2019-02-19

申请人： Kabushiki Kaisha Toshiba ,  Toshiba Electronic Devices & Storage Corporation

发明人： Makoto Mizukami ,  Takuma Suzuki ,  Yujiro Hara

IPC分类号： H01L29/78 ,  H01L29/16 ,  H01L29/06

摘要： A semiconductor device according to an embodiment includes a silicon carbide layer having first and second planes; first and second trenches extending in a first direction; first and second gate electrodes; a first silicon carbide region of a first conductivity type; a plurality of second silicon carbide regions of a second conductivity type between the first silicon carbide region and the first plane, located between the first trench and the second trench, and separated from each other in the first direction; a fourth silicon carbide region of the second conductivity type between two of the second silicon carbide regions and contacting the second silicon carbide region; a fifth silicon carbide region of the second conductivity type between the two second silicon carbide regions and contacting the second silicon carbide region; a first electrode contacting the first silicon carbide region; and a second electrode.

公开(公告)号：US10355078B2

公开(公告)日：2019-07-16

申请号：US15243522

申请日：2016-08-22

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Hiroshi Kono ,  Takuma Suzuki

IPC分类号： H01L29/06 ,  H01L29/10 ,  H01L29/16 ,  H01L29/78

摘要： A device includes a silicon carbide layer between first and second electrodes. The silicon carbide layer includes first region, second region between the first region and second electrode, and third region between the second region and second electrode. The device includes first and second trenches, through the second and third regions and terminating within the first region, having a layer formed thereon, and spaced by portions of the second and third regions. The silicon carbide layer includes fourth region between the third region and first trench, and fifth region between the third region and second trench. The second region includes a fourth portion between first and second portions, and a fifth portion between second and third portions. The first, second, and third portions have lower impurity than the fourth and fifth portions, and the fourth and fifth portions extend closer to the first electrode than do the other portions.

公开(公告)号：US11094786B2

公开(公告)日：2021-08-17

申请号：US16808696

申请日：2020-03-04

申请人： Kabushiki Kaisha Toshiba ,  Toshiba Electronic Devices & Storage Corporation

发明人： Hiroshi Kono ,  Souzou Kanie ,  Shigeto Fukatsu ,  Takuma Suzuki

IPC分类号： H01L29/16 ,  H01L29/78 ,  H01L29/06 ,  H01L29/10

摘要： A semiconductor device of embodiments includes a silicon carbide layer including an element region and a termination region around the element region, the termination region having first straight-line portions extending in a first direction, second straight-line portions extending in a second direction, and corner portions between the first straight-line portions and the second straight-line portions, the termination region including a second-conductivity-type second silicon carbide region having a dot-line shape with first dot portions and first space portions surrounding the element region, an occupation ratio of the first dot portions is larger in the corner portions than in the first straight-line portions, and a second-conductivity-type third silicon carbide region having a dot-line shape with second dot portions and second space portions surrounding the second silicon carbide region, an occupation ratio of the second dot portions is lager in the corner portions than in the first straight-line portions.

公开(公告)号：US10892332B2

公开(公告)日：2021-01-12

申请号：US16558958

申请日：2019-09-03

申请人： Kabushiki Kaisha Toshiba ,  Toshiba Electronic Devices & Storage Corporation

发明人： Shigeto Fukatsu ,  Masaru Furukawa ,  Hiroshi Kono ,  Takuma Suzuki ,  Shunsuke Asaba

IPC分类号： H01L31/0256 ,  H01L21/02 ,  H01L21/00 ,  H01L21/336 ,  H01L29/16 ,  H01L29/78 ,  H01L29/51 ,  H01L21/76 ,  H01L29/66 ,  H01L51/05

摘要： A semiconductor device according to an embodiment includes a silicon carbide layer; a gate electrode; and a gate insulating layer which is provided between the silicon carbide layer and the gate electrode and includes a first silicon oxide layer and a second silicon oxide layer provided between the first silicon oxide layer and the gate electrode, the first silicon oxide layer having a first nitrogen concentration and a first thickness, the second silicon oxide layer having a second nitrogen concentration lower than the first nitrogen concentration and a second thickness. The second thickness between an end portion of the gate electrode and the silicon carbide layer is greater than the second thickness between a central portion of the gate electrode and the silicon carbide layer.

公开(公告)号：US09882036B2

公开(公告)日：2018-01-30

申请号：US15246193

申请日：2016-08-24

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Hiroshi Kono ,  Takuma Suzuki

IPC分类号： H01L29/739 ,  H01L29/45 ,  H01L29/16 ,  H01L29/06 ,  H01L29/10 ,  H01L29/78 ,  H01L29/66

CPC分类号： H01L29/7397 ,  H01L29/0696 ,  H01L29/083 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/417 ,  H01L29/45 ,  H01L29/66325 ,  H01L29/7395 ,  H01L29/7396 ,  H01L29/7802

摘要： A semiconductor device includes first and second electrodes and a silicon carbide layer located between the first and second electrodes. A plurality of gate electrodes is interposed between the first electrode and the silicon carbide layer and extends in a first direction. The silicon carbide layer includes a plurality of spaced apart openings having sidewalls and a base which extend inwardly between the gate electrodes, a first region containing a second conductivity type impurity extending around and under the openings, and a second region containing a second conductivity type impurity interposed between the portion of the first region extending under the base of the openings. The concentration of the second conductivity type impurity is greater in the second region than in the first region. The silicon carbide layer includes a third region containing a first conductivity type impurity extending inwardly of the first region from the sidewall of the openings.

公开(公告)号：US09799608B2

公开(公告)日：2017-10-24

申请号：US14840850

申请日：2015-08-31

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Takuma Suzuki ,  Hirofumi Fujisawa ,  Tsutomu Shirakawa ,  Kenya Sano

IPC分类号： H01L23/544 ,  H01L29/872 ,  H01L29/16

CPC分类号： H01L23/544 ,  H01L29/1602 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/24 ,  H01L29/872 ,  H01L2223/54406 ,  H01L2223/54433 ,  H01L2223/54473

摘要： A semiconductor device includes a monocrystalline substrate of a material which does not have a liquid phase at atmospheric pressure, and an identification mark disposed on or in the substrate comprising an amorphous region of the material or a region of the material deviated from stoichiometry.

公开(公告)号：US09018637B2

公开(公告)日：2015-04-28

申请号：US13799596

申请日：2013-03-13

申请人： Kabushiki Kaisha Toshiba

发明人： Johji Nishio ,  Hiroshi Kono ,  Takuma Suzuki ,  Tatsuo Shimizu ,  Takashi Shinohe

IPC分类号： H01L31/0312 ,  H01L29/16 ,  H01L29/66 ,  H01L29/739 ,  H01L29/78 ,  H01L29/08 ,  H01L29/10 ,  H01L29/161 ,  H01L29/04

CPC分类号： H01L29/105 ,  H01L29/045 ,  H01L29/0878 ,  H01L29/1041 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/66068 ,  H01L29/7395 ,  H01L29/7802

摘要： According to one embodiment, a transistor includes: a structural body; an insulating film; a control electrode; a first electrode; and a second electrode. The structural body includes a first through a third semiconductor regions, and includes a compound semiconductor having a first and a second elements. The first electrode is electrically continuous with the third semiconductor region. The second electrode is electrically continuous with the first semiconductor region. The structural body has a first region provided above a lower end of the second semiconductor region and a second region other than the first region. The first region is a region formed by making a ratio of concentration of source gas of the second element to concentration of source gas of the first element larger than 1.0. Impurity concentration of the first conductivity type in the first region is higher than that in the second region.

公开(公告)号：US20220020853A1

公开(公告)日：2022-01-20

申请号：US17377955

申请日：2021-07-16

申请人： Kabushiki Kaisha Toshiba ,  Toshiba Electronic Devices & Storage Corporation

发明人： Takuma Suzuki ,  Sozo Kanie ,  Chiharu Ota ,  Susumu Obata ,  Kazuhisa Goto

IPC分类号： H01L29/16 ,  H01L29/66 ,  H01L29/32 ,  H01L29/78

摘要： A semiconductor device of embodiments includes a silicon carbide layer having a first face and a second face, a gate electrode, a gate insulating layer on the first face. The silicon carbide layer includes a first silicon carbide region of a first conductive type; a second silicon carbide region of a second conductive type disposed between the first silicon carbide region and the first face; a third silicon carbide region of a second conductive type between the first silicon carbide region and the first face; a fourth silicon carbide region; a fifth silicon carbide region; a sixth silicon carbide region of a second conductive type between the first silicon carbide region and the first face and between the second silicon carbide region and the third silicon carbide region; and a crystal defect. The crystal defect is in the sixth silicon carbide region.

公开(公告)号：US20160056283A1

公开(公告)日：2016-02-25

申请号：US14465633

申请日：2014-08-21

申请人： Kabushiki Kaisha Toshiba

发明人： Takuma Suzuki

IPC分类号： H01L29/78 ,  H01L29/66 ,  H01L29/423 ,  H01L29/36 ,  H01L21/31 ,  H01L21/3105 ,  H01L21/04 ,  H01L29/16 ,  H01L21/324

CPC分类号： H01L29/7827 ,  H01L21/02332 ,  H01L21/02337 ,  H01L21/045 ,  H01L21/049 ,  H01L29/1608 ,  H01L29/36 ,  H01L29/4236 ,  H01L29/42364 ,  H01L29/518 ,  H01L29/66068 ,  H01L29/66666 ,  H01L29/7395 ,  H01L29/7397 ,  H01L29/7802 ,  H01L29/7813

摘要： According to one embodiment, semiconductor device including: a first semiconductor region; a second semiconductor region provided on the first semiconductor region; a third semiconductor region provided on the second semiconductor region, and the third semiconductor region having a higher impurity concentration than an impurity concentration of the first semiconductor region; a gate insulating film being in contact with the third semiconductor region, the second semiconductor region, and the first semiconductor region, and the gate insulating film having a region in which a nitrogen concentration becomes a lower concentration further away from a juncture portion of the third semiconductor region, the second semiconductor region, and the first semiconductor region, or being contact with the third semiconductor region, the second semiconductor region, and the first semiconductor region via a nitrogen-including layer; and a gate electrode provided on the gate insulating film.

摘要翻译： 根据一个实施例，半导体器件包括：第一半导体区; 设置在所述第一半导体区域上的第二半导体区域; 设置在第二半导体区域上的第三半导体区域和具有比第一半导体区域的杂质浓度高的杂质浓度的第三半导体区域; 与第三半导体区域，第二半导体区域和第一半导体区域接触的栅极绝缘膜，以及栅极绝缘膜，其具有氮浓度变得更远离第三半导体区域的接合部的较低浓度的区域 半导体区域，第二半导体区域和第一半导体区域，或经由含氮层与第三半导体区域，第二半导体区域和第一半导体区域接触; 以及设置在栅极绝缘膜上的栅电极。

公开(公告)号：US11728386B2

公开(公告)日：2023-08-15

申请号：US17375248

申请日：2021-07-14

申请人： Kabushiki Kaisha Toshiba ,  Toshiba Electronic Devices & Storage Corporation

发明人： Hiroshi Kono ,  Souzou Kanie ,  Shigeto Fukatsu ,  Takuma Suzuki

IPC分类号： H01L29/16 ,  H01L29/78 ,  H01L29/06 ,  H01L29/10

CPC分类号： H01L29/1608 ,  H01L29/0603 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/7802

摘要： A semiconductor device of embodiments includes a silicon carbide layer including an element region and a termination region around the element region, the termination region having first straight-line portions extending in a first direction, second straight-line portions extending in a second direction, and corner portions between the first straight-line portions and the second straight-line portions, the termination region including a second-conductivity-type second silicon carbide region having a dot-line shape with first dot portions and first space portions surrounding the element region, an occupation ratio of the first dot portions is larger in the corner portions than in the first straight-line portions, and a second-conductivity-type third silicon carbide region having a dot-line shape with second dot portions and second space portions surrounding the second silicon carbide region, an occupation ratio of the second dot portions is lager in the corner portions than in the first straight-line portions.