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公开(公告)号：US09830968B2
公开(公告)日：2017-11-28
申请号：US15266120
申请日：2016-09-15
CPC分类号： G11C11/161 , G11C11/1655 , G11C11/1657 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C11/18 , H01L27/224 , H01L27/228 , H01L28/00 , H01L43/02 , H01L43/08
摘要： A magnetic memory according to an embodiment includes: at least one memory cell, the memory cell comprising: a conductive layer including a first terminal, a second terminal, and a portion located between the first terminal and the second terminal; a magnetoresistive element including: a first magnetic layer; a second magnetic layer between the portion and the first magnetic layer; and a nonmagnetic layer between the first magnetic layer and the second magnetic layer; a diode including an anode and a cathode, one of the anode and the cathode being electrically connected to the first magnetic layer; and a transistor including third and fourth terminals and a control terminal, the third terminal being electrically connected to the first terminal.
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公开(公告)号：US09691973B2
公开(公告)日：2017-06-27
申请号：US14843050
申请日：2015-09-02
发明人： Tsunehiro Ino , Riichiro Takaishi , Koichi Kato , Yasushi Nakasaki , Takamitsu Ishihara , Daisuke Matsushita
IPC分类号： H01L45/00 , G11C11/22 , H01L27/11507 , H01L27/11514 , H01L49/02 , H01L27/1159 , H01L27/11597 , H01L29/78 , C01G25/02 , C01G27/00 , C01G27/02 , H01L29/51
CPC分类号： H01L45/06 , C01G25/02 , C01G27/00 , C01G27/02 , G11C11/22 , H01L27/11507 , H01L27/11514 , H01L27/1159 , H01L27/11597 , H01L28/40 , H01L29/516 , H01L29/78391 , H01L29/7843 , H01L45/04 , H01L45/1233 , H01L45/1253 , H01L45/145 , H01L45/146
摘要： A semiconductor device according to an embodiment includes a first conductive layer, a second conductive layer, and a dielectric film provided between the first and the second conductive layers. The dielectric film including a fluorite-type crystal and a positive ion site includes Hf and/or Zr, and a negative ion site includes O. In the dielectric film, parameters a, b, c, p, x, y, z, u, v and w satisfy a predetermined relation. The axis length of the a-axis, b-axis and c-axis of the original unit cell is a, b, and c, respectively. An axis in a direction with no reversal symmetry is c-axis, a stacking direction of atomic planes of two kinds formed by negative ions disposed at different positions is a-axis, the remainder is b-axis. The parameters x, y, z, u, v and w are values represented using the parameter p.
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公开(公告)号：US20150380641A1
公开(公告)日：2015-12-31
申请号：US14843050
申请日：2015-09-02
发明人： Tsunehiro INO , Riichiro Takaishi , Koichi Kato , Yasushi Nakasaki , Takamitsu Ishihara , Daisuke Matsushita
CPC分类号： H01L45/06 , C01G25/02 , C01G27/00 , C01G27/02 , G11C11/22 , H01L27/11507 , H01L27/11514 , H01L27/1159 , H01L27/11597 , H01L28/40 , H01L29/516 , H01L29/78391 , H01L29/7843 , H01L45/04 , H01L45/1233 , H01L45/1253 , H01L45/145 , H01L45/146
摘要： A semiconductor device according to an embodiment includes a first conductive layer, a second conductive layer, and a dielectric film provided between the first and the second conductive layers. The dielectric film including a fluorite-type crystal and a positive ion site includes Hf and/or Zr, and a negative ion site includes O. In the dielectric film, parameters a, b, c, p, x, y, z, u, v and w satisfy a predetermined relation. The axis length of the a-axis, b-axis and c-axis of the original unit cell is a, b, and c, respectively. An axis in a direction with no reversal symmetry is c-axis, a stacking direction of atomic planes of two kinds formed by negative ions disposed at different positions is a-axis, the remainder is b-axis. The parameters x, y, z, u, v and w are values represented using the parameter p.
摘要翻译： 根据实施例的半导体器件包括第一导电层，第二导电层和设置在第一和第二导电层之间的电介质膜。 包括萤石型晶体和正离子位置的电介质膜包括Hf和/或Zr，负离子位置包括O.在电介质膜中，参数a，b，c，p，x，y，z，u ，v和w满足预定关系。 原始单元的a轴，b轴和c轴的轴长分别为a，b和c。 不具有反转对称方向的轴为c轴，由位于不同位置的负离子形成的两种原子平面的堆叠方向为a轴，其余为b轴。 参数x，y，z，u，v和w是使用参数p表示的值。
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4.发明授权公开(公告)号：US09331167B2
公开(公告)日：2016-05-03
申请号：US14313501
申请日：2014-06-24
发明人： Takamitsu Ishihara , Koichi Muraoka
IPC分类号： H01L29/423 , H01L29/51 , H01L21/28 , H01L29/788 , H01L29/792 , H01L27/115
CPC分类号： H01L29/7887 , H01L21/28273 , H01L21/28282 , H01L27/11521 , H01L29/42324 , H01L29/4234 , H01L29/512 , H01L29/7881 , H01L29/792
摘要： According to an aspect of the present invention, there is provided a nonvolatile semiconductor storage device including: a semiconductor substrate; a source region and a drain region that are formed in the semiconductor substrate so as to be separated from each other and so as to define a channel region therebetween; a tunnel insulating film that is formed on the channel region; an insulative charge storage film that is formed on the tunnel insulating film; a conductive charge storage film that is formed on the insulative charge storage film so as to be shorter than the insulative charge storage film in a channel direction; an interlayer insulating film that is formed on the conductive charge storage film; and a gate electrode that is formed on the interlayer insulating film.
摘要翻译： 根据本发明的一个方面，提供了一种非易失性半导体存储装置，包括：半导体衬底; 源极区和漏极区，形成在所述半导体衬底中以便彼此分离并且在其间限定沟道区; 形成在沟道区上的隧道绝缘膜; 形成在隧道绝缘膜上的绝缘电荷存储膜; 形成在绝缘性电荷存储膜上的导电性电荷存储膜比沟道方向上的绝缘性电荷存储膜短; 形成在导电性电荷存储膜上的层间绝缘膜; 以及形成在层间绝缘膜上的栅电极。
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公开(公告)号：US08796753B2
公开(公告)日：2014-08-05
申请号：US14146585
申请日：2014-01-02
发明人： Takamitsu Ishihara , Koichi Muraoka
IPC分类号： H01L29/423 , H01L27/115
CPC分类号： H01L29/7887 , H01L21/28273 , H01L21/28282 , H01L27/11521 , H01L29/42324 , H01L29/4234 , H01L29/512 , H01L29/7881 , H01L29/792
摘要： According to an aspect of the present invention, there is provided a nonvolatile semiconductor storage device including: a semiconductor substrate; a source region and a drain region that are formed in the semiconductor substrate so as to be separated from each other and so as to define a channel region therebetween; a tunnel insulating film that is formed on the channel region; an insulative charge storage film that is formed on the tunnel insulating film; a conductive charge storage film that is formed on the insulative charge storage film so as to be shorter than the insulative charge storage film in a channel direction; an interlayer insulating film that is formed on the conductive charge storage film; and a gate electrode that is formed on the interlayer insulating film.
摘要翻译： 根据本发明的一个方面，提供了一种非易失性半导体存储装置，包括：半导体衬底; 源极区和漏极区，形成在所述半导体衬底中以便彼此分离并且在其间限定沟道区; 形成在沟道区上的隧道绝缘膜; 形成在隧道绝缘膜上的绝缘电荷存储膜; 形成在绝缘性电荷存储膜上的导电性电荷存储膜比沟道方向上的绝缘性电荷存储膜短; 形成在导电性电荷存储膜上的层间绝缘膜; 以及形成在层间绝缘膜上的栅电极。
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