公开(公告)号：US09070561B2

公开(公告)日：2015-06-30

申请号：US14515700

申请日：2014-10-16

申请人： KEC Corporation

发明人： Kyu Hyo Hwang ,  Jong Hong Lee ,  Gab Soo Choi ,  Cha Soo Jeon ,  Jin Sang Park ,  Sang Bo Bae ,  Yong Min Park ,  Sung Jin An

IPC分类号： H01L23/00 ,  H01L23/495

CPC分类号： H01L23/49531 ,  H01L23/4827 ,  H01L23/49513 ,  H01L23/49575 ,  H01L23/49582 ,  H01L24/05 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L24/85 ,  H01L24/92 ,  H01L2224/04026 ,  H01L2224/05073 ,  H01L2224/05082 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05172 ,  H01L2224/05617 ,  H01L2224/0562 ,  H01L2224/05623 ,  H01L2224/05624 ,  H01L2224/05638 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05657 ,  H01L2224/05666 ,  H01L2224/05672 ,  H01L2224/29082 ,  H01L2224/29083 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29113 ,  H01L2224/29117 ,  H01L2224/29118 ,  H01L2224/2912 ,  H01L2224/29123 ,  H01L2224/29124 ,  H01L2224/29138 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/29155 ,  H01L2224/29157 ,  H01L2224/32245 ,  H01L2224/32501 ,  H01L2224/32505 ,  H01L2224/83191 ,  H01L2224/83825 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/01322 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/351 ,  H01L2924/3651 ,  H01L2924/00 ,  H01L2924/01014 ,  H01L2924/01032 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/45099

摘要： Provided are a semiconductor device and a bonding structure thereof, in which an inter-metal compound is not formed with a semiconductor die or a lead frame, thereby improving electrical and mechanical properties and wettability and suppressing conglomeration of a die bonding material. The semiconductor device includes a semiconductor die, a barrier layer formed on a surface of the semiconductor die, a first metal layer formed on the barrier layer, a central metal layer formed on the first metal layer, and a second metal layer formed on the central metal layer. Here, the first and second metal layers have a first melting temperature, and the central metal layer has a second melting temperature lower than the first melting temperature.

摘要翻译： 提供一种半导体器件及其接合结构，其中金属间化合物不形成半导体管芯或引线框架，从而提高电气和机械性能和润湿性并抑制管芯接合材料的聚集。 半导体器件包括半导体管芯，形成在半导体管芯的表面上的阻挡层，形成在阻挡层上的第一金属层，形成在第一金属层上的中心金属层，以及形成在中心上的第二金属层 金属层。 这里，第一和第二金属层具有第一熔融温度，并且中心金属层具有低于第一熔融温度的第二熔融温度。

公开(公告)号：US20150123253A1

公开(公告)日：2015-05-07

申请号：US14515700

申请日：2014-10-16

申请人： KEC Corporation

发明人： Kyu Hyo Hwang ,  Jong Hong Lee ,  Gab Soo Choi ,  Cha Soo Jeon ,  Jin Sang Park ,  Sang Bo Bae ,  Yong Min Park ,  Sung Jin An

IPC分类号： H01L23/00 ,  H01L23/495

CPC分类号： H01L23/49531 ,  H01L23/4827 ,  H01L23/49513 ,  H01L23/49575 ,  H01L23/49582 ,  H01L24/05 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L24/85 ,  H01L24/92 ,  H01L2224/04026 ,  H01L2224/05073 ,  H01L2224/05082 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05172 ,  H01L2224/05617 ,  H01L2224/0562 ,  H01L2224/05623 ,  H01L2224/05624 ,  H01L2224/05638 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05657 ,  H01L2224/05666 ,  H01L2224/05672 ,  H01L2224/29082 ,  H01L2224/29083 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29113 ,  H01L2224/29117 ,  H01L2224/29118 ,  H01L2224/2912 ,  H01L2224/29123 ,  H01L2224/29124 ,  H01L2224/29138 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/29155 ,  H01L2224/29157 ,  H01L2224/32245 ,  H01L2224/32501 ,  H01L2224/32505 ,  H01L2224/83191 ,  H01L2224/83825 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/01322 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/351 ,  H01L2924/3651 ,  H01L2924/00 ,  H01L2924/01014 ,  H01L2924/01032 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/45099

摘要： Provided are a semiconductor device and a bonding structure thereof, in which an inter-metal compound is not formed with a semiconductor die or a lead frame, thereby improving electrical and mechanical properties and wettability and suppressing conglomeration of a die bonding material. The semiconductor device includes a semiconductor die, a barrier layer formed on a surface of the semiconductor die, a first metal layer formed on the barrier layer, a central metal layer formed on the first metal layer, and a second metal layer formed on the central metal layer. Here, the first and second metal layers have a first melting temperature, and the central metal layer has a second melting temperature lower than the first melting temperature.

摘要翻译： 提供一种半导体器件及其接合结构，其中金属间化合物不形成半导体管芯或引线框架，从而提高电气和机械性能和润湿性并抑制管芯接合材料的聚集。 半导体器件包括半导体管芯，形成在半导体管芯的表面上的阻挡层，形成在阻挡层上的第一金属层，形成在第一金属层上的中心金属层，以及形成在中心上的第二金属层 金属层。 这里，第一和第二金属层具有第一熔融温度，并且中心金属层具有低于第一熔融温度的第二熔融温度。