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公开(公告)号：US09029943B2
公开(公告)日：2015-05-12
申请号：US13781050
申请日：2013-02-28
发明人： Takeshi Kajiyama
CPC分类号： H01L29/78 , H01F10/3254 , H01L27/228 , H01L29/66477 , H01L43/12
摘要： The semiconductor memory device includes a cell transistor having a gate insulating film deposited on an inner surface of a groove formed in an upper surface of the semiconductor substrate, a gate electrode buried in the groove with the gate insulating film formed on the inner surface thereof, and a source region and a drain region formed on an upper surface of the active area of the semiconductor substrate on opposite sides of the gate electrode. The semiconductor memory device includes an MTJ element having a variable resistance that varies with a direction of magnetization that is provided on the source region and electrically connected to the source region at a first end thereof.
摘要翻译： 半导体存储器件包括：单晶体晶体管，其具有沉积在形成于半导体衬底的上表面的沟槽的内表面上的栅极绝缘膜;埋入沟槽中的栅电极，栅极绝缘膜形成在其内表面上; 以及源极区和漏极区，形成在栅电极的相对侧上的半导体衬底的有源区的上表面上。 半导体存储器件包括具有可变电阻的MTJ元件，该可变电阻随着设置在源极区上的磁化方向而变化，并在其第一端与源极区电连接。
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公开(公告)号：US09263666B2
公开(公告)日：2016-02-16
申请号：US14563374
申请日：2014-12-08
发明人： Takeshi Kajiyama , Yoshiaki Asao
CPC分类号： H01L43/08 , G11C11/16 , G11C11/161 , G11C11/1675 , H01L27/222 , H01L27/228 , H01L43/02 , H01L43/10
摘要： A magnetic random access memory which is a memory cell array including a magnetoresistive effect element having a fixed layer whose magnetization direction is fixed, a recording layer whose magnetization direction is reversible, and a non-magnetic layer provided between the fixed layer and the recording layer, wherein all conductive layers in the memory cell array arranged below the magnetoresistive effect element are formed of materials each containing an element selected from a group including W, Mo, Ta, Ti, Zr, Nb, Cr, Hf, V, Co, and Ni.
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