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1.Semiconductor device and manufacturing method of semiconductor device 有权
Title translation: 半导体器件及半导体器件的制造方法公开(公告)号:US20020121703A1
公开(公告)日:2002-09-05
申请号:US10084065
申请日:2002-02-28
Applicant: KABUSHI KAISHA TOSHIBA
Inventor: Hiroshi Toyoda , Mitsuhiro Nakao , Masahiko Hasunuma , Hisashi Kaneko , Atsuko Sakata , Toshiaki Komukai
IPC: H01L029/40 , H01L023/52 , H01L023/48
CPC classification number: H01L21/76846 , H01L21/76834 , H01L21/76849 , H01L21/76858 , H01L21/76886 , H01L21/76888 , H01L22/32 , H01L23/53233 , H01L23/53238 , H01L23/53295 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/45 , H01L24/48 , H01L2224/02166 , H01L2224/0392 , H01L2224/0401 , H01L2224/04042 , H01L2224/05009 , H01L2224/05017 , H01L2224/05082 , H01L2224/05083 , H01L2224/05093 , H01L2224/05147 , H01L2224/05166 , H01L2224/05181 , H01L2224/05187 , H01L2224/05546 , H01L2224/05552 , H01L2224/05557 , H01L2224/05558 , H01L2224/05559 , H01L2224/05567 , H01L2224/05605 , H01L2224/05611 , H01L2224/05613 , H01L2224/05616 , H01L2224/0562 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/13099 , H01L2224/13105 , H01L2224/13109 , H01L2224/13111 , H01L2224/13113 , H01L2224/13116 , H01L2224/1312 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/45105 , H01L2224/45109 , H01L2224/45111 , H01L2224/45113 , H01L2224/45116 , H01L2224/4512 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/4807 , H01L2224/48453 , H01L2224/48463 , H01L2224/48505 , H01L2224/48611 , H01L2224/48616 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48647 , H01L2224/48711 , H01L2224/48716 , H01L2224/48724 , H01L2224/48739 , H01L2224/48747 , H01L2224/48799 , H01L2224/48805 , H01L2224/48811 , H01L2224/48813 , H01L2224/48816 , H01L2224/4882 , H01L2224/48824 , H01L2224/48839 , H01L2224/48844 , H01L2224/48847 , H01L2224/85375 , H01L2924/0002 , H01L2924/01006 , H01L2924/01007 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01031 , H01L2924/0104 , H01L2924/01041 , H01L2924/01042 , H01L2924/01044 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01051 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01083 , H01L2924/01327 , H01L2924/04953 , H01L2924/05042 , H01L2924/10253 , H01L2924/12042 , H01L2924/00014 , H01L2924/04941 , H01L2224/05609 , H01L2924/00 , H01L2224/48744 , H01L2224/48713 , H01L2224/48705 , H01L2224/4872 , H01L2224/48605 , H01L2224/48613 , H01L2224/4862 , H01L2924/00015
Abstract: A semiconductor device, which is comprised of a copper wiring layer which is formed above a semiconductor substrate, a pad electrode layer which conducts electrically to the copper wiring layer and has an alloy, which contains copper and a metal whose oxidation tendency is higher than copper, formed to extend to the bottom surface, and an insulating protective film which has an opening extended to the pad electrode layer, is provided.
Abstract translation: 一种半导体器件,其由形成在半导体衬底上的铜布线层构成,该电极层与铜布线层电连接并具有合金,所述焊接电极层含有铜和氧化倾向高于铜的金属 形成为延伸到底表面,并且具有延伸到焊盘电极层的开口的绝缘保护膜。