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    Substrate and manufacturing method therefor
    3.
    发明授权
    Substrate and manufacturing method therefor 有权
    基板及其制造方法

    公开(公告)号：US08247301B2

    公开(公告)日：2012-08-21

    申请号：US12734590

    申请日：2008-11-26

    申请人： Junichi Ito ,  Atsushi Yabe ,  Junnosuke Sekiguchi ,  Toru Imori

    发明人： Junichi Ito ,  Atsushi Yabe ,  Junnosuke Sekiguchi ,  Toru Imori

    IPC分类号： H01L21/331 ,  H01L21/8222

    CPC分类号： H01L21/2855 ,  C23C18/1637 ,  C23C18/165 ,  C23C18/1653 ,  C23C18/40 ,  H01L21/288 ,  H01L21/76843 ,  H01L21/76874 ,  H01L23/53238 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A substrate having, on a base material, a barrier film for preventing copper diffusion containing one or more metal elements selected from tungsten, molybdenum and niobium, a metal element having a catalytic function in electroless plating such as ruthenium, rhodium, and iridium, and nitrogen contained in the form of a nitride of the aforementioned one or more metal elements selected from tungsten, molybdenum and niobium. The barrier film for preventing copper diffusion is manufactured by sputtering in a nitrogen atmosphere using a target containing one or more metal elements selected from tungsten, molybdenum and niobium and the aforementioned metal element having a catalytic function in electroless plating.

    摘要翻译： 在基材上具有防止含有选自钨，钼和铌中的一种或多种金属元素的铜扩散用阻挡膜的基板，在无电解电镀如钌，铑和铱中具有催化功能的金属元素，以及 氮以上述一种或多种选自钨，钼和铌的金属元素的氮化物的形式存在。 通过使用含有选自钨，钼和铌中的一种或多种金属元素的靶和在化学镀中具有催化功能的上述金属元素在氮气气氛中溅射来制造防止铜扩散的阻挡膜。

    SUBSTRATE AND MANUFACTURING METHOD THEREFOR
    4.
    发明申请
    SUBSTRATE AND MANUFACTURING METHOD THEREFOR 有权
    基板及其制造方法

    公开(公告)号：US20100244258A1

    公开(公告)日：2010-09-30

    申请号：US12734560

    申请日：2008-11-26

    申请人： Junichi Ito ,  Atsushi Yabe ,  Junnosuke Sekiguchi ,  Toru Imori

    发明人： Junichi Ito ,  Atsushi Yabe ,  Junnosuke Sekiguchi ,  Toru Imori

    IPC分类号： H01L23/48 ,  H05K1/09 ,  C23C14/34

    CPC分类号： H01L21/288 ,  C23C14/0036 ,  C23C14/165 ,  C23C18/1601 ,  C23C18/1637 ,  C23C18/165 ,  C23C18/1653 ,  C23C18/40 ,  C23C18/54 ,  H01L21/2855 ,  H01L21/76843 ,  H01L21/76874 ,  H01L23/53238 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

    摘要： It is an object of the present invention to provide a substrate having a barrier film for preventing copper diffusion having both a barrier function and a catalytic function, wherein the barrier properties during high-temperature heating is excellent.A substrate having, on a base material, a barrier film for preventing copper diffusion comprising one or more metal elements selected from tungsten, molybdenum and niobium, a metal element having a catalytic function in electroless plating such as platinum, gold, silver and palladium, and nitrogen contained in the form of a nitride of the aforementioned one or more metal elements selected from tungsten, molybdenum and niobium. The said barrier film for preventing copper diffusion is manufactured by sputtering in a nitrogen atmosphere using a target containing one or more metal elements selected from tungsten, molybdenum and niobium and the aforementioned metal element having a catalytic function in electroless plating.

    摘要翻译： 本发明的一个目的是提供一种具有防止具有阻隔功能和催化功能的铜扩散的阻挡膜的基板，其中高温加热时的阻挡性能优异。 在基材上具有用于防止铜扩散的阻挡膜的基板，其包含选自钨，钼和铌的一种或多种金属元素，在无电镀如铂，金，银和钯中具有催化功能的金属元素， 以及选自钨，钼和铌的上述一种或多种金属元素的氮化物形式的氮。 所述用于防止铜扩散的阻挡膜通过使用包含一种或多种选自钨，钼和铌的金属元素的靶和在化学镀中具有催化功能的上述金属元素在氮气气氛中溅射来制造。

    Method for electroless plating and metal-plated article
    5.
    发明申请
    Method for electroless plating and metal-plated article 有权
    化学镀方法和镀金制品

    公开(公告)号：US20060233963A1

    公开(公告)日：2006-10-19

    申请号：US10558172

    申请日：2004-03-31

    申请人： Toru Imori ,  Junnosuke Sekiguchi ,  Atsushi Yabe ,  Yoshihisa Fujihira

    发明人： Toru Imori ,  Junnosuke Sekiguchi ,  Atsushi Yabe ,  Yoshihisa Fujihira

    IPC分类号： B05D3/00 ,  B05D1/18

    CPC分类号： C23C18/18 ,  C23C18/1865 ,  C23C18/1879 ,  C23C18/1882 ,  C23C18/1893 ,  C23C18/2033 ,  C23C18/2066 ,  C23C18/2086 ,  C23C18/30

    摘要： It is an object to provide a method for metal plating with good adhesion to materials that are difficult to plate. The present invention is a metal plating method wherein a material to be plated is surface treated with a silane coupling agent having in a molecule thereof a functional group with a metal-capturing capability, is heat treated at a high temperature of at least 150° C., a surface treatment is performed with a solution containing a noble metal compound, and electroless plating is performed. Alternatively, the present invention is a metal plating method wherein a material to be plated is surface treated with a liquid in which a noble metal compound and a silane coupling agent having in a molecule thereof a functional group with a metal-capturing capability have already been mixed or reacted, is heat treated at a high temperature of at least 150° C., and electroless plating is performed.

    摘要翻译： 本发明的目的是提供一种金属镀层的方法，该方法对难以镀覆的材料具有良好的粘合性。 本发明是一种金属镀覆方法，其中用具有金属捕集能力的分子中的具有金属捕获能力的官能团的硅烷偶联剂对待镀覆的材料进行表面处理，在至少150℃的高温下进行热处理 用含有贵金属化合物的溶液进行表面处理，进行无电镀。 或者，本发明是一种金属镀覆方法，其中将待镀材料用贵金属化合物和其分子中具有金属捕集能力的官能团的硅烷偶联剂的液体进行表面处理 混合或反应，在至少150℃的高温下进行热处理，进行无电镀。

    ULSI MICRO-INTERCONNECT MEMBER HAVING RUTHENIUM ELECTROPLATING LAYER ON BARRIER LAYER
    7.
    发明申请
    ULSI MICRO-INTERCONNECT MEMBER HAVING RUTHENIUM ELECTROPLATING LAYER ON BARRIER LAYER 有权
    ULSI微型互连成员，具有在屏障层上的电镀层

    公开(公告)号：US20100314766A1

    公开(公告)日：2010-12-16

    申请号：US12735187

    申请日：2009-01-08

    申请人： Junnosuke Sekiguchi ,  Toru Imori ,  Takashi Kinase

    发明人： Junnosuke Sekiguchi ,  Toru Imori ,  Takashi Kinase

    IPC分类号： H01L23/48 ,  H01L21/4763

    CPC分类号： H01L23/53238 ,  C23C28/021 ,  C23C28/023 ,  C25D3/38 ,  C25D3/50 ,  C25D5/10 ,  H01L21/2885 ,  H01L21/76846 ,  H01L21/76873 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An object of the present is to provide a ULSI micro-interconnect member having a seed layer which, particularly on the inner sidewalls of vias and trenches, is formed with a sufficient coverage and a film thickness uniform with that on surface portion, and which has a low level of impurities. Further objects of the invention are to provide a ULSI micro-interconnect member in which, by utilizing such a seed layer to subsequently effect copper electroplating, micro-interconnects have been formed without generating voids; a process for forming the same; and a semiconductor wafer in which such ULSI micro-interconnects have been formed. A ULSI micro-interconnect member having a substrate and a ULSI micro-interconnect formed on the substrate, wherein the ULSI micro-interconnect includes a barrier layer formed on the substrate and a ruthenium electroplating layer formed on the barrier layer; the ULSI micro-interconnect member further including a copper electroplating layer formed using the ruthenium electroplating layer as a seed layer; and a process for fabricating the ULSI micro-interconnect members.

    摘要翻译： 本发明的目的是提供一种具有种子层的ULSI微互连构件，其特别地在通孔和沟槽的内侧壁上形成有足够的覆盖层，并且膜表面部分具有均匀的膜厚度， 杂质含量低。 本发明的另外的目的是提供一种ULSI微互连构件，其中通过利用这种种子层来随后实现铜电镀，已经形成微互连而不产生空隙; 其形成方法; 以及其中已经形成这种ULSI微互连的半导体晶片。 ULSI微互连构件，其具有形成在基板上的基板和ULSI微互连，其中ULSI微互连包括形成在基板上的阻挡层和形成在阻挡层上的钌电镀层; 所述ULSI微互连构件还包括使用所述钌电镀层作为种子层形成的铜电镀层; 以及制造ULSI微互连部件的工艺。

    Electroless copper plating solution
    9.
    发明申请
    Electroless copper plating solution 有权
    化学镀铜溶液

    公开(公告)号：US20070042125A1

    公开(公告)日：2007-02-22

    申请号：US10576231

    申请日：2004-07-30

    申请人： Atsushi Yabe ,  Junnosuke Sekiguchi ,  Toru Imori ,  Yoshihisa Fujihira

    发明人： Atsushi Yabe ,  Junnosuke Sekiguchi ,  Toru Imori ,  Yoshihisa Fujihira

    IPC分类号： B05D1/18 ,  C23C18/40 ,  C23C18/38

    CPC分类号： C23C18/40

    摘要： To provide an electroless copper plating solution that is favorable to improve the adhesion of a plating film, and an electroless copper plating solution which realizes uniform plating at a low temperature. This electroless copper plating solution is characterized by containing a water-soluble nitrogen-containing polymer in an electroless copper plating solution, and preferably the above-mentioned electroless copper plating solution contains glyoxylic acid and phosphinic acid as reducing agents. The water-soluble nitrogen-containing polymer is preferably a polyacrylamide or a polyethyleneimine, and preferably its weight average molecular weight (Mw) is at least 100,000, and Mw/Mn is 10.0 or less.

    摘要翻译： 提供有利于提高镀膜的粘附性的化学镀铜溶液和在低温下实现均匀电镀的化学镀铜溶液。 该化学镀铜溶液的特征在于在无电镀铜溶液中含有水溶性含氮聚合物，优选上述化学镀铜溶液含有乙醛酸和次膦酸作为还原剂。 水溶性含氮聚合物优选为聚丙烯酰胺或聚乙烯亚胺，优选其重均分子量（Mw）为100,000以上，Mw / Mn为10.0以下。

    Substrate comprising alloy film of metal element having barrier function and metal element having catalytic power
    10.
    发明授权
    Substrate comprising alloy film of metal element having barrier function and metal element having catalytic power 有权
    基片包括具有阻隔功能的金属元素的合金膜和具有催化力的金属元素

    公开(公告)号：US08395264B2

    公开(公告)日：2013-03-12

    申请号：US12998802

    申请日：2010-01-28

    申请人： Junichi Ito ,  Junnosuke Sekiguchi ,  Toru Imori

    发明人： Junichi Ito ,  Junnosuke Sekiguchi ,  Toru Imori

    IPC分类号： H01L23/48

    CPC分类号： H01L21/28556 ,  C23C16/06 ,  C23C18/165 ,  C23C18/1872 ,  C23C18/30 ,  C23C18/40 ,  C23C18/54 ,  H01L21/288 ,  H01L21/76841 ,  H01L21/76873 ,  H01L21/76874 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A layer having a barrier function and catalytic power and excelling in formation uniformity and coverage of an ultrathin film, a pretreatment technique making it possible to form an ultrafine wiring and form a thin seed layer of uniform film thickness and a substrate including a thin seed layer formed with a uniform film thickness by electroless plating by using the aforementioned technique. A substrate in which an alloy film of one or more metal elements, having a barrier function and a metal element or metal elements, having catalytic power with respect to electroless plating is formed by chemical vapor deposition (CVD) on a base to a film thickness of 0.5 nm to 5 nm with a content ratio of the one or more metal element having a barrier function from 5 to 90 at. %.

    摘要翻译： 具有阻隔功能和催化力的层，超薄膜的形成均匀性和覆盖性优异的预处理技术，使得可以形成超细布线并形成均匀膜厚度的薄种子层和包含薄种子层的基板 通过使用上述技术通过无电镀形成均匀的膜厚度。 通过化学气相沉积（CVD）在基底上形成具有屏障功能的一种或多种金属元素的合金膜和具有相对于化学镀的催化能的金属元素或金属元素的基底， 为0.5nm至5nm，其中一种或多种金属元素的阻挡功能的含量比为5至90at。 ％。