公开(公告)号：US08736057B2

公开(公告)日：2014-05-27

申请号：US12734560

申请日：2008-11-26

申请人： Junichi Ito ,  Atsushi Yabe ,  Junnosuke Sekiguchi ,  Toru Imori

发明人： Junichi Ito ,  Atsushi Yabe ,  Junnosuke Sekiguchi ,  Toru Imori

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L21/288 ,  C23C14/0036 ,  C23C14/165 ,  C23C18/1601 ,  C23C18/1637 ,  C23C18/165 ,  C23C18/1653 ,  C23C18/40 ,  C23C18/54 ,  H01L21/2855 ,  H01L21/76843 ,  H01L21/76874 ,  H01L23/53238 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

摘要： A substrate having, on a base material, a barrier film for preventing copper diffusion containing one or more metal elements selected from tungsten, molybdenum and niobium, a metal element having a catalytic function in electroless plating such as platinum, gold, silver and palladium, and nitrogen contained in the form of a nitride of the aforementioned one or more metal elements selected from tungsten, molybdenum and niobium. The barrier film for preventing copper diffusion is manufactured by sputtering in a nitrogen atmosphere using a target containing one or more metal elements selected from tungsten, molybdenum and niobium and the aforementioned metal element having a catalytic function in electroless plating.

摘要翻译： 在基材上具有防止含有选自钨，钼，铌中的一种以上的金属元素的铜扩散用阻挡膜的基板，具有铂，金，银，钯等无电镀的催化功能的金属元素， 以及选自钨，钼和铌的上述一种或多种金属元素的氮化物形式的氮。 通过使用含有选自钨，钼和铌中的一种或多种金属元素的靶和在化学镀中具有催化功能的上述金属元素在氮气气氛中溅射来制造防止铜扩散的阻挡膜。

公开(公告)号：US08247301B2

公开(公告)日：2012-08-21

申请号：US12734590

申请日：2008-11-26

申请人： Junichi Ito ,  Atsushi Yabe ,  Junnosuke Sekiguchi ,  Toru Imori

发明人： Junichi Ito ,  Atsushi Yabe ,  Junnosuke Sekiguchi ,  Toru Imori

IPC分类号： H01L21/331 ,  H01L21/8222

CPC分类号： H01L21/2855 ,  C23C18/1637 ,  C23C18/165 ,  C23C18/1653 ,  C23C18/40 ,  H01L21/288 ,  H01L21/76843 ,  H01L21/76874 ,  H01L23/53238 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

摘要： A substrate having, on a base material, a barrier film for preventing copper diffusion containing one or more metal elements selected from tungsten, molybdenum and niobium, a metal element having a catalytic function in electroless plating such as ruthenium, rhodium, and iridium, and nitrogen contained in the form of a nitride of the aforementioned one or more metal elements selected from tungsten, molybdenum and niobium. The barrier film for preventing copper diffusion is manufactured by sputtering in a nitrogen atmosphere using a target containing one or more metal elements selected from tungsten, molybdenum and niobium and the aforementioned metal element having a catalytic function in electroless plating.

摘要翻译： 在基材上具有防止含有选自钨，钼和铌中的一种或多种金属元素的铜扩散用阻挡膜的基板，在无电解电镀如钌，铑和铱中具有催化功能的金属元素，以及 氮以上述一种或多种选自钨，钼和铌的金属元素的氮化物的形式存在。 通过使用含有选自钨，钼和铌中的一种或多种金属元素的靶和在化学镀中具有催化功能的上述金属元素在氮气气氛中溅射来制造防止铜扩散的阻挡膜。

公开(公告)号：US20100244258A1

公开(公告)日：2010-09-30

申请号：US12734560

申请日：2008-11-26

申请人： Junichi Ito ,  Atsushi Yabe ,  Junnosuke Sekiguchi ,  Toru Imori

发明人： Junichi Ito ,  Atsushi Yabe ,  Junnosuke Sekiguchi ,  Toru Imori

IPC分类号： H01L23/48 ,  H05K1/09 ,  C23C14/34

CPC分类号： H01L21/288 ,  C23C14/0036 ,  C23C14/165 ,  C23C18/1601 ,  C23C18/1637 ,  C23C18/165 ,  C23C18/1653 ,  C23C18/40 ,  C23C18/54 ,  H01L21/2855 ,  H01L21/76843 ,  H01L21/76874 ,  H01L23/53238 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

摘要： It is an object of the present invention to provide a substrate having a barrier film for preventing copper diffusion having both a barrier function and a catalytic function, wherein the barrier properties during high-temperature heating is excellent.A substrate having, on a base material, a barrier film for preventing copper diffusion comprising one or more metal elements selected from tungsten, molybdenum and niobium, a metal element having a catalytic function in electroless plating such as platinum, gold, silver and palladium, and nitrogen contained in the form of a nitride of the aforementioned one or more metal elements selected from tungsten, molybdenum and niobium. The said barrier film for preventing copper diffusion is manufactured by sputtering in a nitrogen atmosphere using a target containing one or more metal elements selected from tungsten, molybdenum and niobium and the aforementioned metal element having a catalytic function in electroless plating.

摘要翻译： 本发明的一个目的是提供一种具有防止具有阻隔功能和催化功能的铜扩散的阻挡膜的基板，其中高温加热时的阻挡性能优异。 在基材上具有用于防止铜扩散的阻挡膜的基板，其包含选自钨，钼和铌的一种或多种金属元素，在无电镀如铂，金，银和钯中具有催化功能的金属元素， 以及选自钨，钼和铌的上述一种或多种金属元素的氮化物形式的氮。 所述用于防止铜扩散的阻挡膜通过使用包含一种或多种选自钨，钼和铌的金属元素的靶和在化学镀中具有催化功能的上述金属元素在氮气气氛中溅射来制造。

公开(公告)号：US08395264B2

公开(公告)日：2013-03-12

申请号：US12998802

申请日：2010-01-28

申请人： Junichi Ito ,  Junnosuke Sekiguchi ,  Toru Imori

发明人： Junichi Ito ,  Junnosuke Sekiguchi ,  Toru Imori

IPC分类号： H01L23/48

CPC分类号： H01L21/28556 ,  C23C16/06 ,  C23C18/165 ,  C23C18/1872 ,  C23C18/30 ,  C23C18/40 ,  C23C18/54 ,  H01L21/288 ,  H01L21/76841 ,  H01L21/76873 ,  H01L21/76874 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A layer having a barrier function and catalytic power and excelling in formation uniformity and coverage of an ultrathin film, a pretreatment technique making it possible to form an ultrafine wiring and form a thin seed layer of uniform film thickness and a substrate including a thin seed layer formed with a uniform film thickness by electroless plating by using the aforementioned technique. A substrate in which an alloy film of one or more metal elements, having a barrier function and a metal element or metal elements, having catalytic power with respect to electroless plating is formed by chemical vapor deposition (CVD) on a base to a film thickness of 0.5 nm to 5 nm with a content ratio of the one or more metal element having a barrier function from 5 to 90 at. %.

摘要翻译： 具有阻隔功能和催化力的层，超薄膜的形成均匀性和覆盖性优异的预处理技术，使得可以形成超细布线并形成均匀膜厚度的薄种子层和包含薄种子层的基板 通过使用上述技术通过无电镀形成均匀的膜厚度。 通过化学气相沉积（CVD）在基底上形成具有屏障功能的一种或多种金属元素的合金膜和具有相对于化学镀的催化能的金属元素或金属元素的基底， 为0.5nm至5nm，其中一种或多种金属元素的阻挡功能的含量比为5至90at。 ％。

公开(公告)号：US20110241209A1

公开(公告)日：2011-10-06

申请号：US12998802

申请日：2010-01-28

申请人： Junichi Ito ,  Junnosuke Sekiguchi ,  Toru Imori

发明人： Junichi Ito ,  Junnosuke Sekiguchi ,  Toru Imori

IPC分类号： H01L23/48 ,  H01L21/768

CPC分类号： H01L21/28556 ,  C23C16/06 ,  C23C18/165 ,  C23C18/1872 ,  C23C18/30 ,  C23C18/40 ,  C23C18/54 ,  H01L21/288 ,  H01L21/76841 ,  H01L21/76873 ,  H01L21/76874 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： It is an object of the present invention to provide a layer having a barrier function and catalytic power and excelling in formation uniformity and coverage of an ultrathin film, provide a pretreatment technique making it possible to form an ultrafine wiring and form a thin seed layer of uniform film thickness, and provide a substrate including a thin seed layer formed with a uniform film thickness by electroless plating by using the aforementioned technique. The present invention provides a substrate in which an alloy film of one or more metal elements, having a barrier function, selected from among tungsten, molybdenum and, niobium and a metal element or metal elements, having catalytic power with respect to electroless plating, composed of ruthenium and/or platinum is formed by chemical vapor deposition (CVD) on a base to a film thickness of 0.5 nm to 5 nm in a composition with a content ratio of the one or more metal element having a barrier function of equal to or greater than 5 at. % and equal to or less than 90 at. %.

摘要翻译： 本发明的目的是提供一种具有阻隔功能和催化能力的层，并且超薄膜的形成均匀性和覆盖性优异，提供预处理技术，使得可以形成超细布线并形成薄的种子层 并且通过使用上述技术通过无电镀提供包括通过无电镀形成的具有均匀膜厚度的薄种子层的基板。 本发明提供了一种基板，其中具有屏障功能的一种或多种金属元素的合金膜选自钨，钼和铌以及具有相对于化学镀的催化力的金属元素或金属元素，所述金属元素或金属元素组成 钌和/或铂的钌和/或铂通过化学气相沉积（CVD）在基底上形成为具有0.5nm至5nm的膜厚度的组合物，其中所述一种或多种金属元素的阻挡功能的含量比等于或等于 大于5英寸 ％且等于或小于90。 ％。

公开(公告)号：US20100038111A1

公开(公告)日：2010-02-18

申请号：US12311207

申请日：2008-07-18

申请人： Atsushi Yabe ,  Junichi Ito ,  Yoshiyuki Hisumi ,  Junnosuke Sekiguchi ,  Toru Imori

发明人： Atsushi Yabe ,  Junichi Ito ,  Yoshiyuki Hisumi ,  Junnosuke Sekiguchi ,  Toru Imori

IPC分类号： H01B5/14 ,  C23C14/34 ,  B05D5/12

CPC分类号： H01L21/76843 ,  C23C14/165 ,  C23C14/584 ,  C23C18/1879 ,  C23C18/31 ,  C23C18/54 ,  H01L21/288 ,  H01L21/76873 ,  H01L21/76874 ,  H01L23/53238 ,  H01L2221/1089 ,  H01L2924/0002 ,  Y10T428/12493 ,  Y10T428/12507 ,  Y10T428/12514 ,  Y10T428/24917 ,  H01L2924/00

摘要： The present invention provides a plated article that has a thin seed layer having uniform thickness, formed by electroless plating and allowing formation of ultrafine wiring, and that avoids the complicated formation of a bilayer of a barrier layer and a catalytic metal layer prior to forming the seed layer. The present invention also provides a method for manufacturing the plated article. The plated article has an alloy thin film formed on a substrate and having a catalytically active metal (A) for electroless plating and a metal (B) capable of undergoing displacement plating with a metal ion contained in an electroless plating solution, and a metal thin film formed on the alloy thin film by electroless displacement and reduction plating. The alloy thin film of the catalytically active metal (A) and the metal (B) capable of displacement plating has a composition comprising 5 at % to 40 at % of the metal (A). The metal thin film formed by electroless displacement and reduction plating is a metal thin film having a thickness no greater than 10 nm and a resistivity no greater than 10 μΩ·cm. Preferably, the metal (B) has a barrier function with respect to a metal of the metal thin film.

摘要翻译： 本发明提供了具有均匀厚度的薄种子层的电镀制品，其通过无电镀形成，并且允许形成超细布线，并且避免了在形成之前形成阻挡层和催化金属层的双层的复杂形成 种子层。 本发明还提供一种制造电镀制品的方法。 电镀制品具有在基板上形成的合金薄膜，具有用于无电镀的催化活性金属（A）和能够在化学镀溶液中含有金属离子进行置换镀覆的金属（B），金属薄膜 通过无电位移和还原电镀在合金薄膜上形成薄膜。 催化活性金属（A）和能够移位镀金属（B）的合金薄膜具有包含金属（A）的5at％至40at％的组成。 通过无电解位移和还原电镀形成的金属薄膜是厚度不大于10nm，电阻率不大于10μΩ·cm·cm的金属薄膜。 优选地，金属（B）相对于金属薄膜的金属具有阻挡功能。

公开(公告)号：US08283051B2

公开(公告)日：2012-10-09

申请号：US12737399

申请日：2009-07-13

申请人： Junichi Ito ,  Atsushi Yabe ,  Junnosuke Sekiguchi ,  Toru Imori ,  Yasuhiro Yamakoshi ,  Shinichiro Senda

发明人： Junichi Ito ,  Atsushi Yabe ,  Junnosuke Sekiguchi ,  Toru Imori ,  Yasuhiro Yamakoshi ,  Shinichiro Senda

IPC分类号： B32B15/08

CPC分类号： C23C18/54 ,  C23C18/1637 ,  C23C18/165 ,  C25D3/38 ,  H01L21/288 ,  H01L21/76843 ,  H01L21/76873 ,  H01L21/76874 ,  Y10T428/12431 ,  Y10T428/12438 ,  Y10T428/12493 ,  Y10T428/12569 ,  Y10T428/12826 ,  Y10T428/1284 ,  Y10T428/12854 ,  Y10T428/12903

摘要： A plated product made of a substrate having formed thereon an alloy barrier thin film for preventing copper diffusion contains metal B, which has barrier properties in relation to copper and enables displacement plating with the copper ions contained in an electroless copper plating solution, and metal A, which tends to have less ionization than metal B in an electroless copper plating solution at a pH of 10 or higher; the alloy barrier thin film for preventing copper diffusion has a composition wherein metal A constitutes between 15 and 35 at % of the atoms; and a copper thin film is formed on the alloy barrier thin film by electroless plating using an electroless copper plating solution at a pH of 10 or higher.

摘要翻译： 由其上形成有用于防止铜扩散的合金阻挡薄膜的基板制成的电镀产品包含金属B，该金属B具有与铜相关的阻挡性能，并且能够与无电镀铜溶液中包含的铜离子进行置换镀覆，并且金属A 在pH为10以上的化学镀铜溶液中倾向于具有比金属B更少的离子化; 用于防止铜扩散的合金阻挡薄膜具有其中金属A构成原子的15至35原子％的组成; 并且通过使用pH为10以上的化学镀铜溶液进行化学镀，在合金阻挡薄膜上形成铜薄膜。

公开(公告)号：US20110129688A1

公开(公告)日：2011-06-02

申请号：US12737399

申请日：2009-07-13

申请人： Junichi Ito ,  Atsushi Yabe ,  Junnosuke Sekiguchi ,  Toru Imori ,  Yasuhiro Yamakoshi ,  Shinichiro Senda

发明人： Junichi Ito ,  Atsushi Yabe ,  Junnosuke Sekiguchi ,  Toru Imori ,  Yasuhiro Yamakoshi ,  Shinichiro Senda

IPC分类号： B32B15/20

CPC分类号： C23C18/54 ,  C23C18/1637 ,  C23C18/165 ,  C25D3/38 ,  H01L21/288 ,  H01L21/76843 ,  H01L21/76873 ,  H01L21/76874 ,  Y10T428/12431 ,  Y10T428/12438 ,  Y10T428/12493 ,  Y10T428/12569 ,  Y10T428/12826 ,  Y10T428/1284 ,  Y10T428/12854 ,  Y10T428/12903

摘要： An object of the present invention is to provide a plated object having a thin seed layer of uniform thickness that enables the fabrication of ultrafine wiring thereon in which, when the seed layer is formed by electroless copper plating, the uniformity and adherence thereof are improved over the aforementioned case in which electroless copper plating is performed on an elemental metal such as tungsten, molybdenum, etc., and the aforementioned complexity of forming two layers of a barrier layer and a catalyst metal layer before forming the copper seed layer is eliminated.A plated product comprising a substrate having formed thereon an alloy barrier thin film for preventing copper diffusion comprising metal B, which has barrier properties in relation to copper and enables displacement plating with the copper ions contained in an electroless copper plating solution, and metal A, which tends to have less ionization than metal B in an electroless copper plating solution at pH 10 or higher; the alloy barrier thin film for preventing copper diffusion has a composition wherein metal A constitutes between 15 and 35 at % of the atoms; and a copper thin film is formed on the alloy barrier thin film by electroless plating using an electroless copper plating solution at pH 10 or higher.

摘要翻译： 本发明的目的是提供一种具有均匀厚度的薄种子层的电镀物体，其能够在其上制造超细线，其中当通过无电镀铜形成种子层时，其均匀性和粘附性得到改善， 在形成铜籽晶层之前，对诸如钨，钼等的元素金属进行化学镀铜的上述情况以及形成两层阻挡层和催化剂金属层的上述复杂性被消除。 一种电镀产品，其包括在其上形成有用于防止铜扩散的合金阻挡薄膜的基板，其包含相对于铜具有阻挡性的金属B，并且能够与包含在无电镀铜溶液中的铜离子进行置换镀覆，以及金属A， 在pH为10以上的化学镀铜溶液中，其比金属B的离子化倾向更小; 用于防止铜扩散的合金阻挡薄膜具有其中金属A构成原子的15至35原子％的组成; 并且通过使用pH10或更高的化学镀铜溶液进行化学镀来在合金阻挡薄膜上形成铜薄膜。

公开(公告)号：US08163400B2

公开(公告)日：2012-04-24

申请号：US12311207

申请日：2008-07-18

申请人： Atsushi Yabe ,  Junichi Ito ,  Yoshiyuki Hisumi ,  Junnosuke Sekiguchi ,  Toru Imori

发明人： Atsushi Yabe ,  Junichi Ito ,  Yoshiyuki Hisumi ,  Junnosuke Sekiguchi ,  Toru Imori

IPC分类号： H01L29/00 ,  H05K3/00

CPC分类号： H01L21/76843 ,  C23C14/165 ,  C23C14/584 ,  C23C18/1879 ,  C23C18/31 ,  C23C18/54 ,  H01L21/288 ,  H01L21/76873 ,  H01L21/76874 ,  H01L23/53238 ,  H01L2221/1089 ,  H01L2924/0002 ,  Y10T428/12493 ,  Y10T428/12507 ,  Y10T428/12514 ,  Y10T428/24917 ,  H01L2924/00

摘要： The present invention provides a plated article that has a thin seed layer having a uniform thickness, formed by electroless plating and allowing formation of ultrafine wiring, and that avoids the complicated formation of a bilayer of a barrier layer and a catalytic metal layer prior to forming the seed layer. The present invention also provides a method for manufacturing the plated article. The plated article has an alloy thin film formed on a substrate and containing a catalytically active metal (A) for electroless plating and a metal (B) capable of undergoing displacement plating with a metal ion contained in an electroless plating solution, and a metal thin film formed on the alloy thin film by electroless displacement and reduction plating. The alloy thin film of the catalytically active metal (A) and the metal (B) capable of displacement plating has a composition comprising 5at% to 40at% of the metal (A). The metal thin film formed by electroless displacement and reduction plating is a metal thin film having a thickness no greater than 10 nm and a resistivity no greater than 10 μΩ·cm. Preferably, the metal (B) has a barrier function with respect to a metal of the metal thin film.

摘要翻译： 本发明提供一种电镀制品，其具有通过无电镀形成的具有均匀厚度的薄种子层，并且允许形成超细布线，并且避免在形成之前形成阻挡层和催化金属层的双层 种子层。 本发明还提供一种制造电镀制品的方法。 电镀制品具有在基板上形成的含有用于无电镀的催化活性金属（A）和能够用化学镀溶液中含有的金属离子进行置换镀覆的金属（B）的合金薄膜，以及金属薄膜 通过无电位移和还原电镀在合金薄膜上形成薄膜。 催化活性金属（A）的合金薄膜和能够移位镀的金属（B）具有包含金属（A）的5原子％至40原子％的组成。 通过无电解位移和还原电镀形成的金属薄膜是厚度不大于10nm，电阻率不大于10μΩ·cm·cm的金属薄膜。 优选地，金属（B）相对于金属薄膜的金属具有阻挡功能。

公开(公告)号：US20100244259A1

公开(公告)日：2010-09-30

申请号：US12734590

申请日：2008-11-26

申请人： Junichi Ito ,  Atsushi Yabe ,  Junnosuke Sekiguchi ,  Toru Imori

发明人： Junichi Ito ,  Atsushi Yabe ,  Junnosuke Sekiguchi ,  Toru Imori

IPC分类号： H01L23/48 ,  H05K1/09 ,  C23C14/34

CPC分类号： H01L21/2855 ,  C23C18/1637 ,  C23C18/165 ,  C23C18/1653 ,  C23C18/40 ,  H01L21/288 ,  H01L21/76843 ,  H01L21/76874 ,  H01L23/53238 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

摘要： It is an object of the present invention to provide a substrate having a barrier film for preventing copper diffusion having both a barrier function and a catalytic function, wherein the barrier properties during high-temperature heating is excellent.A substrate having, on a base material, a barrier film for preventing copper diffusion comprising one or more metal elements selected from tungsten, molybdenum and niobium, a metal element having a catalytic function in electroless plating such as ruthenium, rhodium, and iridium, and nitrogen contained in the form of a nitride of the aforementioned one or more metal elements selected from tungsten, molybdenum and niobium. The said barrier film for preventing copper diffusion is manufactured by sputtering in a nitrogen atmosphere using a target containing one or more metal elements selected from tungsten, molybdenum and niobium and the aforementioned metal element having a catalytic function in electroless plating.

摘要翻译： 本发明的一个目的是提供一种具有防止具有阻隔功能和催化功能的铜扩散的阻挡膜的基板，其中高温加热时的阻挡性能优异。 在基材上具有用于防止铜扩散的阻挡膜的基板，其包含选自钨，钼和铌中的一种或多种金属元素，在化学镀如钌，铑和铱中具有催化功能的金属元素，以及 氮以上述一种或多种选自钨，钼和铌的金属元素的氮化物的形式存在。 所述用于防止铜扩散的阻挡膜通过使用包含一种或多种选自钨，钼和铌的金属元素的靶和在化学镀中具有催化功能的上述金属元素在氮气气氛中溅射来制造。