发明申请
- 专利标题: SUBSTRATE AND MANUFACTURING METHOD THEREFOR
- 专利标题(中): 基板及其制造方法
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申请号: US12734590申请日: 2008-11-26
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公开(公告)号: US20100244259A1公开(公告)日: 2010-09-30
- 发明人: Junichi Ito , Atsushi Yabe , Junnosuke Sekiguchi , Toru Imori
- 申请人: Junichi Ito , Atsushi Yabe , Junnosuke Sekiguchi , Toru Imori
- 优先权: JP2007-324685 20071217
- 国际申请: PCT/JP2008/071453 WO 20081126
- 主分类号: H01L23/48
- IPC分类号: H01L23/48 ; H05K1/09 ; C23C14/34
摘要:
It is an object of the present invention to provide a substrate having a barrier film for preventing copper diffusion having both a barrier function and a catalytic function, wherein the barrier properties during high-temperature heating is excellent.A substrate having, on a base material, a barrier film for preventing copper diffusion comprising one or more metal elements selected from tungsten, molybdenum and niobium, a metal element having a catalytic function in electroless plating such as ruthenium, rhodium, and iridium, and nitrogen contained in the form of a nitride of the aforementioned one or more metal elements selected from tungsten, molybdenum and niobium. The said barrier film for preventing copper diffusion is manufactured by sputtering in a nitrogen atmosphere using a target containing one or more metal elements selected from tungsten, molybdenum and niobium and the aforementioned metal element having a catalytic function in electroless plating.
公开/授权文献
- US08247301B2 Substrate and manufacturing method therefor 公开/授权日:2012-08-21
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