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公开(公告)号：US20050104690A1
公开(公告)日：2005-05-19
申请号：US10969744
申请日：2004-10-19
申请人： John Larson , Stephen Ellis , Paul Bradley , Yury Oshmyansky
发明人： John Larson , Stephen Ellis , Paul Bradley , Yury Oshmyansky
摘要： The film bulk acoustic resonator (FBAR) device comprises a substrate, an acoustic Bragg reflector over the substrate, a piezoelectric element over the acoustic Bragg reflector, and a remote-side electrode over the piezoelectric element. The acoustic Bragg reflector comprises a metal Bragg layer juxtaposed with a plastic Bragg layer. The large ratio between the acoustic impedances of the plastic material of the plastic Bragg layer and the metal of the metal Bragg layer provides sufficient acoustic isolation between the FBAR and the substrate for the frequency response of the FBAR device to exhibit minor, if any, spurious artifacts arising from undesirable acoustic coupling between the FBAR and the substrate.
摘要翻译： 膜体声波谐振器（FBAR）器件包括衬底，衬底上的声布拉格反射器，声布拉格反射器上方的压电元件以及压电元件上的远端侧电极。 声布拉格反射器包括与塑料布拉格层并置的金属布拉格层。 塑料布拉格层的塑料材料的声阻抗与金属布拉格层的金属之间的较大的比率在FBAR和衬底之间提供足够的声学隔离，以使FBAR器件的频率响应显示较小的（如果有的话）杂散 FBAR和基片之间的不良声耦合产生的伪影。
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2.发明申请公开(公告)号：US20050110597A1
公开(公告)日：2005-05-26
申请号：US10969636
申请日：2004-10-19
申请人： John Larson , Stephen Ellis , Yury Oshmyansky
发明人： John Larson , Stephen Ellis , Yury Oshmyansky
摘要： The encapsulated film bulk acoustic resonator (FBAR) device comprises a substrate, an FBAR stack over the substrate, an element for acoustically isolating the FBAR stack from the substrate, encapsulant covering the FBAR stack, and an acoustic Bragg reflector between the top surface of the FBAR stack and the encapsulant. The FBAR stack comprises an FBAR and has a top surface remote from the substrate. The FBAR comprises opposed planar electrodes and a piezoelectric element between the electrodes. The acoustic Bragg reflector comprises a metal Bragg layer and a plastic Bragg layer juxtaposed with the metal Bragg layer. The large ratio between the acoustic impedances of the metal of the metal Bragg layer and the plastic material of the plastic Bragg layer enables the acoustic Bragg reflector to provide sufficient acoustic isolation between the FBAR and the encapsulant for the frequency response of the FBAR device to exhibit minor, if any, spurious artifacts arising from undesirable acoustic coupling between the FBAR and the encapsulant.
摘要翻译： 封装膜体声波谐振器（FBAR）器件包括衬底，衬底上的FBAR堆叠，用于将FBAR堆叠与衬底声学隔离的元件，覆盖FBAR堆叠的密封剂以及覆盖FBAR堆叠的声学布拉格反射器 FBAR堆叠和密封剂。 FBAR堆叠包括FBAR并且具有远离衬底的顶表面。 FBAR包括相对的平面电极和电极之间的压电元件。 声布拉格反射器包括与金属布拉格层并列的金属布拉格层和塑性布拉格层。 金属布拉格层的金属和塑料布拉格层的塑性材料的声阻抗之间的较大比率使得布拉格反射镜能够在FBAR和密封剂之间提供足够的声学隔离，用于FBAR器件的频率响应 轻微的，如果有的话，由FBAR和密封剂之间的不良声耦合产生的伪像。
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公开(公告)号：US20060185139A1
公开(公告)日：2006-08-24
申请号：US11404403
申请日：2006-04-14
申请人： John Larson , Yury Oshmyansky
发明人： John Larson , Yury Oshmyansky
CPC分类号： H03H9/605 , H03H9/132 , H03H9/584 , H03H9/587 , Y10T29/42 , Y10T29/4902 , Y10T29/49128 , Y10T29/49155
摘要： Embodiments of an acoustically-coupled transformer have a first stacked bulk acoustic resonator (SBAR) and a second SBAR. Each of the SBARs has a lower film bulk acoustic resonator (FBAR) and an upper FBAR, and an acoustic decoupler between the FBARs. The upper FBAR is stacked atop the lower FBAR. Each FBAR has opposed planar electrodes and a piezoelectric element between the electrodes. The piezoelectric element is characterized by a c-axis. The c-axes of the piezoelectric elements of the lower FBARs are opposite in direction, and the c-axes of the piezoelectric elements of the upper FBARs are opposite in direction. The transformer additionally has a first electrical circuit connecting the lower FBAR of the first SBAR to the lower FBAR of the second SBAR, and a second electrical circuit connecting the upper FBAR of the first SBAR to the upper FBARs of the second SBAR.
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4.发明申请Film acoustically-coupled transformer with reverse C-axis piezoelectric material 有权具有反向C轴压电材料的薄膜声耦合变压器公开(公告)号：US20050093657A1
公开(公告)日：2005-05-05
申请号：US10836653
申请日：2004-04-29
申请人： John Larson , Yury Oshmyansky
发明人： John Larson , Yury Oshmyansky
CPC分类号： H03H9/605 , H01L2224/48091 , H01L2224/49175 , H03H9/132 , H03H9/584 , H03H9/587 , Y10T29/42 , H01L2924/00014
摘要： An embodiment of the acoustically-coupled transformer has first and second stacked bulk acoustic resonators (SBARs) each having a stacked pair of film bulk acoustic resonators (FBARs) with an acoustic decoupler between the FBARs. Each FBAR has opposed planar electrodes with piezoelectric material between the electrodes. A first electrical circuit connects one FBARs of the first SBAR to one FBAR of the second SBAR, and a second electrical circuit connects the other FBAR of the first SBAR to the other FBAR of the second SBAR. The c-axis of the piezoelectric material of one of the FBARs is opposite in direction to the c-axes of the piezoelectric materials of the other three FBARs. This arrangement substantially reduces the amplitude of signal-frequency voltages across the acoustic decouplers and significantly improves the common mode rejection of the transformer. This arrangement also allows conductive acoustic decouplers to be used, increasing the available choice of acoustic decoupler materials.
摘要翻译： 声耦合变压器的一个实施例具有第一和第二堆叠的体声波谐振器（SBAR），每个具有堆叠的一对薄膜体声波谐振器（FBAR），在FBAR之间具有声耦合器。 每个FBAR在电极之间具有与压电材料相对的平面电极。 第一电路将第一SBAR的一个FBAR连接到第二SBAR的一个FBAR，并且第二电路将第一SBAR的另一FBAR连接到第二SBAR的另一FBAR。 FBAR中的一个的压电材料的c轴与其他三个FBAR的压电材料的c轴方向相反。 这种布置大大降低了声耦合器上的信号频率电压的振幅，并显着地改善了变压器的共模抑制。 这种布置还允许使用导电声分离器，从而增加声分离器材料的可用选择。
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5.发明申请Film acoustically-coupled transformers with two reverse c-axis piezoelectric elements 有权具有两个反向c轴压电元件的薄膜声耦合变压器公开(公告)号：US20050093396A1
公开(公告)日：2005-05-05
申请号：US10836663
申请日：2004-04-29
申请人： John Larson , Yury Oshmyansky
发明人： John Larson , Yury Oshmyansky
CPC分类号： H03H9/605 , H01L2224/48091 , H01L2224/49175 , H03H9/132 , H03H9/584 , H03H9/587 , Y10T29/42 , H01L2924/00014
摘要： Embodiments of an acoustically-coupled transformer have a first stacked bulk acoustic resonator (SBAR) and a second SBAR. Each of the SBARs has a lower film bulk acoustic resonator (FBAR) and an upper FBAR, and an acoustic decoupler between the FBARs. The upper FBAR is stacked atop the lower FBAR. Each FBAR has opposed planar electrodes and a piezoelectric element between the electrodes. The piezoelectric element is characterized by a c-axis. The c-axes of the piezoelectric elements of the lower FBARs are opposite in direction, and the c-axes of the piezoelectric elements of the upper FBARs are opposite in direction. The transformer additionally has a first electrical circuit connecting the lower FBAR of the first SBAR to the lower FBAR of the second SBAR, and a second electrical circuit connecting the upper FBAR of the first SBAR to the upper FBARs of the second SBAR.
摘要翻译： 声耦合变压器的实施例具有第一层叠体声波谐振器（SBAR）和第二SBAR。 每个SBAR具有较低的膜体声波谐振器（FBAR）和上部FBAR，以及FBAR之间的声学解耦器。 上部FBAR堆叠在较低FBAR的顶部。 每个FBAR具有相对的平面电极和电极之间的压电元件。 压电元件的特征在于c轴。 下FBAR的压电元件的c轴方向相反，上FBAR的压电元件的c轴方向相反。 变压器还具有将第一SBAR的下FBAR连接到第二SBAR的下FBAR的第一电路和将第一SBAR的上FBAR连接到第二SBAR的上FBAR的第二电路。
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6.发明申请Impedance transformation ratio control in film acoustically-coupled transformers 有权薄膜声耦合变压器中的阻抗变换比控制公开(公告)号：US20050128030A1
公开(公告)日：2005-06-16
申请号：US10965474
申请日：2004-10-13
申请人： John Larson , Naghmeh Sarkeshik , Stephen Ellis
发明人： John Larson , Naghmeh Sarkeshik , Stephen Ellis
CPC分类号： H03H9/605 , H01L2224/48091 , H01L2224/49175 , H03H9/132 , H03H9/584 , H03H9/587 , Y10T29/42 , H01L2924/00014
摘要： The film acoustically-coupled transformer (FACT) has decoupled stacked bulk acoustic resonators (DSBARs), a first electrical circuit and a second electrical circuit. Each of the DSBARs has a lower film bulk acoustic resonator (FBAR), an upper FBAR and an acoustic decoupler. The upper FBAR is stacked on the lower FBAR and the acoustic decoupler is located between the FBARs. Each FBAR has opposed planar electrodes and a piezoelectric element between the electrodes. The first electrical circuit interconnects the lower FBARs. The second electrical circuit interconnects the upper FBARs. The FBARs of one of the DSBARs differ in electrical impedance from the FBARs of another of the DSBARs. The FACT has an impedance transformation ratio greater than 1:m2, where m is the number of DSBARs. The actual impedance transformation ratio depends on the ratio of the impedances of the FBARs.
摘要翻译： 薄膜声耦合变压器（FACT）已经分离了堆叠体声共振器（DSBAR），第一电路和第二电路。 每个DSBAR具有较低的膜体声波谐振器（FBAR），上部FBAR和声学解耦器。 上FBAR堆叠在下FBAR上，声耦合器位于FBAR之间。 每个FBAR具有相对的平面电极和电极之间的压电元件。 第一个电路将下部FBAR互连。 第二个电路将上部FBAR互连。 其中一个DSBAR的FBAR的电阻抗与另一DSBAR的FBAR不同。 FACT具有大于1：m 2的阻抗变换比，其中m是DSBAR的数量。 实际的阻抗变换比取决于FBAR的阻抗比。
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7.发明申请Decoupled stacked bulk acoustic resonator band-pass filter with controllable pass bandwidth 有权具有可控通带宽度的去耦叠层体声波谐振器带通滤波器公开(公告)号：US20050093654A1
公开(公告)日：2005-05-05
申请号：US10965541
申请日：2004-10-13
申请人： John Larson , Stephen Ellis
发明人： John Larson , Stephen Ellis
摘要： The band-pass filter has an upper film bulk acoustic resonator (FBAR), an upper FBAR stacked on the lower FBAR, and, between the FBARs, an acoustic decoupler comprising a layer of acoustic decoupling material. Each of the FBARs has opposed planar electrodes and a piezoelectric element between the electrodes. The acoustic decoupler controls the coupling of acoustic energy between the FBARs. Specifically, the acoustic decoupler couples less acoustic energy between the FBARs than would be coupled by direct contact between the FBARs. The reduced acoustic coupling gives the band-pass filter desirable in-band and out-of-band properties.
摘要翻译： 带通滤波器具有上膜体声波谐振器（FBAR），堆叠在下FBAR上的上FBAR，以及在FBAR之间，包括声解耦材料层的声解耦器。 每个FBAR具有相对的平面电极和电极之间的压电元件。 声耦合器控制FBAR之间的声能耦合。 具体来说，声耦合器耦合FBAR之间较少的声能，而不是FBAR之间的直接接触。 减少的声耦合给出带通滤波器所需的带内和带外特性。
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公开(公告)号：US20060284707A1
公开(公告)日：2006-12-21
申请号：US11156676
申请日：2005-06-20
申请人： John Larson , Stephen Ellis
发明人： John Larson , Stephen Ellis
IPC分类号： H03H9/54
CPC分类号： H03H3/02 , H03H9/02102 , H03H9/173 , H03H9/584 , H03H9/587 , H03H9/60 , H03H2003/021 , Y10T29/42 , Y10T29/49005
摘要： A substrate defining a cavity comprising a wide, shallow first portion and a narrow, deep second portion is provided. The first portion of the cavity extends into the substrate from the front side of the substrate and is filled with sacrificial material. The second portion extends deeper into the substrate from the first portion. A device structure is fabricated over the sacrificial material. A release etchant is introduced from the back side of the substrate via the second portion of the cavity to remove from the first portion of the cavity the sacrificial material underlying the device structure. Removing from the first portion of the cavity the sacrificial material underlying the device structure by introducing the release etchant from the back side of the substrate via the second portion of the cavity allows the release etch to be performed without exposing the device structure to the release etchant. This allows the device structure to incorporate materials that have a low etch selectivity with respect to the sacrificial material.
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公开(公告)号：US20050093655A1
公开(公告)日：2005-05-05
申请号：US10965637
申请日：2004-10-13
申请人： John Larson , Richard Ruby , Stephen Ellis
发明人： John Larson , Richard Ruby , Stephen Ellis
摘要： One embodiment of the film acoustically-coupled transformer (FACT) includes a decoupled stacked bulk acoustic resonator (DSBAR) having a lower film bulk acoustic resonator (FBAR) an upper FBAR stacked on the lower FBAR, and, between the FBARs, an acoustic decoupler comprising a layer of acoustic decoupling material. Each FBAR has opposed planar electrodes with a piezoelectric element between them. The FACT additionally has first terminals electrically connected to the electrodes of one FBAR and second terminals electrically connected to the electrodes of the other FBAR. Another embodiment has decoupled stacked bulk acoustic resonators (DSBARs), each as described above, a first electrical circuit interconnecting the lower FBARs, and a second electrical circuit interconnecting the upper FBARs. The FACT provides impedance transformation, can linking single-ended circuitry with balanced circuitry or vice versa and electrically isolates primary and secondary. Some embodiments are additionally electrically balanced.
摘要翻译： 薄膜声耦合变压器（FACT）的一个实施例包括具有下薄膜体声波谐振器（FBAR）的解耦堆叠体声波谐振器（DSBAR），堆叠在下FBAR上的上FBAR，以及在FBAR之间，声解耦器 包括声去耦材料层。 每个FBAR具有相对的平面电极，它们之间具有压电元件。 FACT还具有电连接到一个FBAR的电极的第一端子和电连接到另一个FBAR的电极的第二端子。 另一个实施例已经解耦了堆叠的体声波谐振器（DSBAR），每个如上所述，将第一电路互连到下FBAR，以及互连上FBAR的第二电路。 FACT提供阻抗变换，可以将单端电路与平衡电路相连，反之亦然，并将初级和次级电隔离。 一些实施例另外电平衡。
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公开(公告)号：US20050140466A1
公开(公告)日：2005-06-30
申请号：US11069409
申请日：2005-02-28
申请人： John Larson , Stephen Ellis
发明人： John Larson , Stephen Ellis
摘要： The band-pass filter has first terminals, second terminals, a first decoupled stacked bulk acoustic resonator (DSBAR), a second DSBAR, and an electrical circuit connecting the first DSBAR and the second DSBAR in series between the first terminals and the second terminals. Each DSBAR has a first film bulk acoustic resonator (FBAR), a second FBAR and an acoustic decoupler between the FBARs. Each FBAR has opposed planar electrodes and a piezoelectric element between the electrodes.
摘要翻译： 带通滤波器具有第一端子，第二端子，第一解耦堆叠体声波谐振器（DSBAR），第二DSBAR和在第一端子和第二端子之间串联连接第一DSBAR和第二DSBAR的电路。 每个DSBAR具有第一薄膜体声波谐振器（FBAR），第二FBAR和FBAR之间的声耦合器。 每个FBAR具有相对的平面电极和电极之间的压电元件。
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