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公开(公告)号：US20050104690A1
公开(公告)日：2005-05-19
申请号：US10969744
申请日：2004-10-19
申请人： John Larson , Stephen Ellis , Paul Bradley , Yury Oshmyansky
发明人： John Larson , Stephen Ellis , Paul Bradley , Yury Oshmyansky
摘要： The film bulk acoustic resonator (FBAR) device comprises a substrate, an acoustic Bragg reflector over the substrate, a piezoelectric element over the acoustic Bragg reflector, and a remote-side electrode over the piezoelectric element. The acoustic Bragg reflector comprises a metal Bragg layer juxtaposed with a plastic Bragg layer. The large ratio between the acoustic impedances of the plastic material of the plastic Bragg layer and the metal of the metal Bragg layer provides sufficient acoustic isolation between the FBAR and the substrate for the frequency response of the FBAR device to exhibit minor, if any, spurious artifacts arising from undesirable acoustic coupling between the FBAR and the substrate.
摘要翻译： 膜体声波谐振器（FBAR）器件包括衬底，衬底上的声布拉格反射器，声布拉格反射器上方的压电元件以及压电元件上的远端侧电极。 声布拉格反射器包括与塑料布拉格层并置的金属布拉格层。 塑料布拉格层的塑料材料的声阻抗与金属布拉格层的金属之间的较大的比率在FBAR和衬底之间提供足够的声学隔离，以使FBAR器件的频率响应显示较小的（如果有的话）杂散 FBAR和基片之间的不良声耦合产生的伪影。
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2.发明申请公开(公告)号：US20050110597A1
公开(公告)日：2005-05-26
申请号：US10969636
申请日：2004-10-19
申请人： John Larson , Stephen Ellis , Yury Oshmyansky
发明人： John Larson , Stephen Ellis , Yury Oshmyansky
摘要： The encapsulated film bulk acoustic resonator (FBAR) device comprises a substrate, an FBAR stack over the substrate, an element for acoustically isolating the FBAR stack from the substrate, encapsulant covering the FBAR stack, and an acoustic Bragg reflector between the top surface of the FBAR stack and the encapsulant. The FBAR stack comprises an FBAR and has a top surface remote from the substrate. The FBAR comprises opposed planar electrodes and a piezoelectric element between the electrodes. The acoustic Bragg reflector comprises a metal Bragg layer and a plastic Bragg layer juxtaposed with the metal Bragg layer. The large ratio between the acoustic impedances of the metal of the metal Bragg layer and the plastic material of the plastic Bragg layer enables the acoustic Bragg reflector to provide sufficient acoustic isolation between the FBAR and the encapsulant for the frequency response of the FBAR device to exhibit minor, if any, spurious artifacts arising from undesirable acoustic coupling between the FBAR and the encapsulant.
摘要翻译： 封装膜体声波谐振器（FBAR）器件包括衬底，衬底上的FBAR堆叠，用于将FBAR堆叠与衬底声学隔离的元件，覆盖FBAR堆叠的密封剂以及覆盖FBAR堆叠的声学布拉格反射器 FBAR堆叠和密封剂。 FBAR堆叠包括FBAR并且具有远离衬底的顶表面。 FBAR包括相对的平面电极和电极之间的压电元件。 声布拉格反射器包括与金属布拉格层并列的金属布拉格层和塑性布拉格层。 金属布拉格层的金属和塑料布拉格层的塑性材料的声阻抗之间的较大比率使得布拉格反射镜能够在FBAR和密封剂之间提供足够的声学隔离，用于FBAR器件的频率响应 轻微的，如果有的话，由FBAR和密封剂之间的不良声耦合产生的伪像。
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公开(公告)号：US07332985B2
公开(公告)日：2008-02-19
申请号：US10969744
申请日：2004-10-19
摘要： The film bulk acoustic resonator (FBAR) device comprises a substrate, an acoustic Bragg reflector over the substrate, a piezoelectric element over the acoustic Bragg reflector, and a remote-side electrode over the piezoelectric element. The acoustic Bragg reflector comprises a metal Bragg layer juxtaposed with a plastic Bragg layer. The large ratio between the acoustic impedances of the plastic material of the plastic Bragg layer and the metal of the metal Bragg layer provides sufficient acoustic isolation between the FBAR and the substrate for the frequency response of the FBAR device to exhibit minor, if any, spurious artifacts arising from undesirable acoustic coupling between the FBAR and the substrate.
摘要翻译： 膜体声波谐振器（FBAR）器件包括衬底，衬底上的声布拉格反射器，声布拉格反射器上方的压电元件和压电元件上方的远端侧电极。 声布拉格反射器包括与塑料布拉格层并置的金属布拉格层。 塑料布拉格层的塑料材料和金属布拉格层的金属之间的声阻抗之间的较大比率在FBAR和衬底之间提供足够的声学隔离，以使FBAR器件的频率响应显示较小的（如果有的话）杂散的 FBAR和基片之间的不良声耦合产生的伪影。
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4.发明授权公开(公告)号：US07358831B2
公开(公告)日：2008-04-15
申请号：US10969636
申请日：2004-10-19
摘要： The encapsulated film bulk acoustic resonator (FBAR) device comprises a substrate, an FBAR stack over the substrate, an element for acoustically isolating the FBAR stack from the substrate, encapsulant covering the FBAR stack, and an acoustic Bragg reflector between the top surface of the FBAR stack and the encapsulant. The FBAR stack comprises an FBAR and has a top surface remote from the substrate. The FBAR comprises opposed planar electrodes and a piezoelectric element between the electrodes. The acoustic Bragg reflector comprises a metal Bragg layer and a plastic Bragg layer juxtaposed with the metal Bragg layer. The large ratio between the acoustic impedances of the metal of the metal Bragg layer and the plastic material of the plastic Bragg layer enables the acoustic Bragg reflector to provide sufficient acoustic isolation between the FBAR and the encapsulant for the frequency response of the FBAR device to exhibit minor, if any, spurious artifacts arising from undesirable acoustic coupling between the FBAR and the encapsulant.
摘要翻译： 封装膜体声波谐振器（FBAR）器件包括衬底，衬底上的FBAR堆叠，用于将FBAR堆叠与衬底声学隔离的元件，覆盖FBAR堆叠的密封剂以及覆盖FBAR堆叠的声学布拉格反射器 FBAR堆叠和密封剂。 FBAR堆叠包括FBAR并且具有远离衬底的顶表面。 FBAR包括相对的平面电极和电极之间的压电元件。 声布拉格反射器包括与金属布拉格层并列的金属布拉格层和塑性布拉格层。 金属布拉格层的金属和塑料布拉格层的塑性材料的声阻抗之间的较大比率使得布拉格反射镜能够在FBAR和密封剂之间提供足够的声学隔离，用于FBAR装置的频率响应展现 轻微的，如果有的话，由FBAR和密封剂之间的不良声耦合产生的伪像。
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公开(公告)号：US20050140466A1
公开(公告)日：2005-06-30
申请号：US11069409
申请日：2005-02-28
申请人： John Larson , Stephen Ellis
发明人： John Larson , Stephen Ellis
摘要： The band-pass filter has first terminals, second terminals, a first decoupled stacked bulk acoustic resonator (DSBAR), a second DSBAR, and an electrical circuit connecting the first DSBAR and the second DSBAR in series between the first terminals and the second terminals. Each DSBAR has a first film bulk acoustic resonator (FBAR), a second FBAR and an acoustic decoupler between the FBARs. Each FBAR has opposed planar electrodes and a piezoelectric element between the electrodes.
摘要翻译： 带通滤波器具有第一端子，第二端子，第一解耦堆叠体声波谐振器（DSBAR），第二DSBAR和在第一端子和第二端子之间串联连接第一DSBAR和第二DSBAR的电路。 每个DSBAR具有第一薄膜体声波谐振器（FBAR），第二FBAR和FBAR之间的声耦合器。 每个FBAR具有相对的平面电极和电极之间的压电元件。
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6.发明申请公开(公告)号：US20050093659A1
公开(公告)日：2005-05-05
申请号：US10965586
申请日：2004-10-13
申请人： John Larson , Naghmeh Sarkeshik , Stephen Ellis
发明人： John Larson , Naghmeh Sarkeshik , Stephen Ellis
CPC分类号： H03H9/605 , H01L2224/48091 , H01L2224/49175 , H03H9/132 , H03H9/584 , H03H9/587 , Y10T29/42 , H01L2924/00014
摘要： The film acoustically-coupled transformer (FACT) has a first and second decoupled stacked bulk acoustic resonators (DSBARs). Each DSBAR has a lower film bulk acoustic resonator (FBAR), an upper FBAR atop the lower FBAR, and an acoustic decoupler between them FBARs. Each FBAR has opposed planar electrodes and a piezoelectric element between the electrodes. A first electrical circuit interconnects the lowers FBAR of the first DSBAR and the second DSBAR. A second electrical circuit interconnects the upper FBARs of the first DSBAR and the second DSBAR. In at least one of the DSBARs, the acoustic decoupler and one electrode of the each of the lower FBAR and the upper FBAR adjacent the acoustic decoupler constitute a parasitic capacitor. The FACT additionally has an inductor electrically connected in parallel with the parasitic capacitor. The inductor increases the common-mode rejection ratio of the FACT.
摘要翻译： 薄膜声耦合变压器（FACT）具有第一和第二去耦堆叠体声共振器（DSBAR）。 每个DSBAR具有较低的薄膜体声波谐振器（FBAR），较低的FBAR上方的上部FBAR以及它们之间的声耦合器。 每个FBAR具有相对的平面电极和电极之间的压电元件。 第一电路将第一DSBAR的下降FBAR和第二DSBAR互连。 第二电路将第一DSBAR和第二DSBAR的上FBAR互连。 在至少一个DSBAR中，声耦合器和与隔声器相邻的下FBAR和上FBAR中的每一个的声解耦器和一个电极构成寄生电容器。 FACT还具有与寄生电容并联电连接的电感器。 电感增加了FACT的共模抑制比。
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公开(公告)号：US20060284707A1
公开(公告)日：2006-12-21
申请号：US11156676
申请日：2005-06-20
申请人： John Larson , Stephen Ellis
发明人： John Larson , Stephen Ellis
IPC分类号： H03H9/54
CPC分类号： H03H3/02 , H03H9/02102 , H03H9/173 , H03H9/584 , H03H9/587 , H03H9/60 , H03H2003/021 , Y10T29/42 , Y10T29/49005
摘要： A substrate defining a cavity comprising a wide, shallow first portion and a narrow, deep second portion is provided. The first portion of the cavity extends into the substrate from the front side of the substrate and is filled with sacrificial material. The second portion extends deeper into the substrate from the first portion. A device structure is fabricated over the sacrificial material. A release etchant is introduced from the back side of the substrate via the second portion of the cavity to remove from the first portion of the cavity the sacrificial material underlying the device structure. Removing from the first portion of the cavity the sacrificial material underlying the device structure by introducing the release etchant from the back side of the substrate via the second portion of the cavity allows the release etch to be performed without exposing the device structure to the release etchant. This allows the device structure to incorporate materials that have a low etch selectivity with respect to the sacrificial material.
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公开(公告)号：US20050093655A1
公开(公告)日：2005-05-05
申请号：US10965637
申请日：2004-10-13
申请人： John Larson , Richard Ruby , Stephen Ellis
发明人： John Larson , Richard Ruby , Stephen Ellis
摘要： One embodiment of the film acoustically-coupled transformer (FACT) includes a decoupled stacked bulk acoustic resonator (DSBAR) having a lower film bulk acoustic resonator (FBAR) an upper FBAR stacked on the lower FBAR, and, between the FBARs, an acoustic decoupler comprising a layer of acoustic decoupling material. Each FBAR has opposed planar electrodes with a piezoelectric element between them. The FACT additionally has first terminals electrically connected to the electrodes of one FBAR and second terminals electrically connected to the electrodes of the other FBAR. Another embodiment has decoupled stacked bulk acoustic resonators (DSBARs), each as described above, a first electrical circuit interconnecting the lower FBARs, and a second electrical circuit interconnecting the upper FBARs. The FACT provides impedance transformation, can linking single-ended circuitry with balanced circuitry or vice versa and electrically isolates primary and secondary. Some embodiments are additionally electrically balanced.
摘要翻译： 薄膜声耦合变压器（FACT）的一个实施例包括具有下薄膜体声波谐振器（FBAR）的解耦堆叠体声波谐振器（DSBAR），堆叠在下FBAR上的上FBAR，以及在FBAR之间，声解耦器 包括声去耦材料层。 每个FBAR具有相对的平面电极，它们之间具有压电元件。 FACT还具有电连接到一个FBAR的电极的第一端子和电连接到另一个FBAR的电极的第二端子。 另一个实施例已经解耦了堆叠的体声波谐振器（DSBAR），每个如上所述，将第一电路互连到下FBAR，以及互连上FBAR的第二电路。 FACT提供阻抗变换，可以将单端电路与平衡电路相连，反之亦然，并将初级和次级电隔离。 一些实施例另外电平衡。
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9.发明申请公开(公告)号：US20050093658A1
公开(公告)日：2005-05-05
申请号：US10965449
申请日：2004-10-13
申请人： John Larson , Stephen Ellis
发明人： John Larson , Stephen Ellis
摘要： The decoupled stacked bulk acoustic resonator (DSBAR) device has a lower film bulk acoustic resonator (FBAR), an upper FBAR stacked on the lower FBAR, and an acoustic decoupler between the FBARs. Each of the FBARs has opposed planar electrodes and a layer of piezoelectric material between the electrodes. The acoustic decoupler has acoustic decoupling layers of acoustic decoupling materials having different acoustic impedances. The acoustic impedances and thicknesses of the acoustic decoupling layers determine the acoustic impedance of the acoustic decoupler, and, hence, the pass bandwidth of the DSBAR device. Process-compatible acoustic decoupling materials can then be used to make acoustic decouplers with acoustic impedances (and pass bandwidths) that are not otherwise obtainable due to the lack of process-compatible acoustic decoupling materials with such acoustic impedances.
摘要翻译： 解耦堆叠体声波谐振器（DSBAR）器件具有较低的膜体声波谐振器（FBAR），堆叠在下FBAR上的上FBAR和FBAR之间的声耦合器。 每个FBAR具有相对的平面电极和电极之间的压电材料层。 声解耦器具有具有不同声阻抗的声去耦材料的声去耦层。 声学解耦层的声阻抗和厚度决定了声耦合器的声阻抗，并因此决定了DSBAR器件的通带宽度。 然后，由于缺乏具有这种声阻抗的工艺兼容的声学解耦材料，因此可以使用与工艺兼容的声学解耦材料来制造具有声阻抗（和通过带宽）的声学去耦器。
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10.发明申请Impedance transformation ratio control in film acoustically-coupled transformers 有权薄膜声耦合变压器中的阻抗变换比控制公开(公告)号：US20050128030A1
公开(公告)日：2005-06-16
申请号：US10965474
申请日：2004-10-13
申请人： John Larson , Naghmeh Sarkeshik , Stephen Ellis
发明人： John Larson , Naghmeh Sarkeshik , Stephen Ellis
CPC分类号： H03H9/605 , H01L2224/48091 , H01L2224/49175 , H03H9/132 , H03H9/584 , H03H9/587 , Y10T29/42 , H01L2924/00014
摘要： The film acoustically-coupled transformer (FACT) has decoupled stacked bulk acoustic resonators (DSBARs), a first electrical circuit and a second electrical circuit. Each of the DSBARs has a lower film bulk acoustic resonator (FBAR), an upper FBAR and an acoustic decoupler. The upper FBAR is stacked on the lower FBAR and the acoustic decoupler is located between the FBARs. Each FBAR has opposed planar electrodes and a piezoelectric element between the electrodes. The first electrical circuit interconnects the lower FBARs. The second electrical circuit interconnects the upper FBARs. The FBARs of one of the DSBARs differ in electrical impedance from the FBARs of another of the DSBARs. The FACT has an impedance transformation ratio greater than 1:m2, where m is the number of DSBARs. The actual impedance transformation ratio depends on the ratio of the impedances of the FBARs.
摘要翻译： 薄膜声耦合变压器（FACT）已经分离了堆叠体声共振器（DSBAR），第一电路和第二电路。 每个DSBAR具有较低的膜体声波谐振器（FBAR），上部FBAR和声学解耦器。 上FBAR堆叠在下FBAR上，声耦合器位于FBAR之间。 每个FBAR具有相对的平面电极和电极之间的压电元件。 第一个电路将下部FBAR互连。 第二个电路将上部FBAR互连。 其中一个DSBAR的FBAR的电阻抗与另一DSBAR的FBAR不同。 FACT具有大于1：m 2的阻抗变换比，其中m是DSBAR的数量。 实际的阻抗变换比取决于FBAR的阻抗比。
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