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    Organometallic composition for forming a metal alloy pattern and a method of forming such a pattern using the composition
    1.
    发明申请
    Organometallic composition for forming a metal alloy pattern and a method of forming such a pattern using the composition 有权
    用于形成金属合金图案的有机金属组合物和使用该组合物形成这种图案的方法

    公开(公告)号：US20050250051A1

    公开(公告)日：2005-11-10

    申请号：US10718809

    申请日：2003-11-24

    申请人： Jin Kim ,  Soon Hwang ,  Young Byun ,  Euk Hwang ,  Sang Lee

    发明人： Jin Kim ,  Soon Hwang ,  Young Byun ,  Euk Hwang ,  Sang Lee

    IPC分类号： C22C1/10 ,  G03F7/00 ,  G03F7/004

    CPC分类号： G03F7/0043 ,  G03F7/0042

    摘要： An organometallic composition containing an organometallic compound (I) containing Ag, an organometallic compound (II) containing Au, Pd, or Ru, and an organometallic compound (III) containing Ti, Ta, Cr, Mo, Ru, Ni, Pd, Cu, Au, or Al, wherein the metal components of organometallic compounds (II) and (III), respectively, are present in an amount of 0.01˜10 mol % based on the amount of Ag in the organometallic compound (I), and a method of forming a metal alloy pattern using the same. Silver alloy patterns can be obtained through a simplified manufacturing process, which patterns have enhanced heat resistance, adhesiveness and chemical stability. The method may be applied to making a reflective film for LCD and metal wiring (gate, source, drain electrode) for flexible displays or flat panel displays, and further to CMP-free damascene processing and PR-free ITO film deposition.

    摘要翻译： 含有含Ag的有机金属化合物（I），含有Au，Pd或Ru的有机金属化合物（II）和含有Ti，Ta，Cr，Mo，Ru，Ni，Pd，Cu的有机金属化合物（III）的有机金属组合物 ，Au或Al，其中有机金属化合物（II）和（III）的金属组分分别以有机金属化合物（I）中的Ag的量为0.01〜10mol％的量存在，以及 使用其形成金属合金图案的方法。 可以通过简化的制造工艺获得银合金图案，该图案具有增强的耐热性，粘合性和化学稳定性。 该方法可以应用于制造用于LCD和用于柔性显示器或平板显示器的LCD和金属布线（栅极，源极，漏极）的反射膜，并且还可用于制造无CMP的镶嵌加工和无PR的ITO膜沉积。

    Method of fabricating thin film transistor
    3.
    发明申请
    Method of fabricating thin film transistor 有权
    制造薄膜晶体管的方法

    公开(公告)号：US20060094172A1

    公开(公告)日：2006-05-04

    申请号：US11142502

    申请日：2005-06-02

    申请人： Tae Lee ,  Young Byun ,  Yi Lyu ,  Sang Lee ,  Bon Koo

    发明人： Tae Lee ,  Young Byun ,  Yi Lyu ,  Sang Lee ,  Bon Koo

    IPC分类号： H01L21/84

    CPC分类号： H01L51/0021 ,  B82Y10/00 ,  H01L51/0015 ,  H01L51/0046 ,  H01L51/0545

    摘要： A method of fabricating a thin film transistor, in which source and drain electrodes are formed through a solution process, thus all stages which include formation of electrodes on a substrate, formation of an insulator layer, and formation of an organic semiconductor layer are conducted through the solution process. In the method, the fabrication is simplified and a fabrication cost is reduced. It is possible to apply the organic thin film transistor to integrated circuits requiring high speed switching because of high charge mobility.

    摘要翻译： 一种制造薄膜晶体管的方法，其中通过溶液工艺形成源极和漏极，因此包括在衬底上形成电极，形成绝缘体层和形成有机半导体层的所有阶段通过 解决过程。 在该方法中，简化了制造并降低了制造成本。 由于高电荷迁移率，有机薄膜晶体管可能需要高速切换的集成电路。

    Organic thin film transistor comprising multi-layered gate insulator
    4.
    发明申请
    Organic thin film transistor comprising multi-layered gate insulator 有权
    包括多层栅极绝缘体的有机薄膜晶体管

    公开(公告)号：US20050001210A1

    公开(公告)日：2005-01-06

    申请号：US10769816

    申请日：2004-02-03

    申请人： Sang Lee ,  Jong Park ,  Yi Lyu ,  Young Byun ,  Bon Koo ,  In Kang

    发明人： Sang Lee ,  Jong Park ,  Yi Lyu ,  Young Byun ,  Bon Koo ,  In Kang

    IPC分类号： C08F212/14 ,  C08F222/40 ,  H01L21/312 ,  H01L21/316 ,  H01L29/786 ,  H01L51/05 ,  H01L51/30 ,  H01L35/24

    CPC分类号： H01L51/0545 ,  H01L21/31604 ,  H01L21/31691 ,  H01L51/0052 ,  H01L51/0529 ,  H01L51/0537

    摘要： An organic thin film transistor (OTFT) comprising a gate electrode, a gate insulating film, an organic active layer and a source/drain electrode, or a gate electrode, a gate insulating film, a source/drain electrode and an organic active layer, sequentially formed on a substrate, wherein the gate insulating film is a multi-layered insulator comprising a first layer of a high dielectric material and a second layer of an insulating organic polymer compatible with the organic active layer, the second layer being positioned directly under the organic active layer. The OTFT of the present invention shows low threshold and driving voltages, high charge mobility, and high Ion/Ioff, and it can be prepared by a wet process.

    摘要翻译： 一种有机薄膜晶体管（OTFT），包括栅极，栅极绝缘膜，有机活性层和源极/漏极，或栅电极，栅极绝缘膜，源/漏电极和有机活性层， 依次形成在基板上，其中栅极绝缘膜是包括高介电材料的第一层和与有机活性层相容的绝缘有机聚合物的第二层的多层绝缘体，第二层位于 有机活性层。 本发明的OTFT显示低阈值和驱动电压，高电荷迁移率和高离子/离子交换，并且可以通过湿法制备。

    DIPOLAR SIDE-EMITTING LED LENS AND LED MODULE INCORPORATING THE SAME
    7.
    发明申请
    DIPOLAR SIDE-EMITTING LED LENS AND LED MODULE INCORPORATING THE SAME 有权
    DIPOLAR SIDE发光LED透镜和LED模块并入

    公开(公告)号：US20060081863A1

    公开(公告)日：2006-04-20

    申请号：US11085534

    申请日：2005-03-21

    申请人： Jin Kim ,  Hun Hahm ,  Hyung Kim ,  Jin Kim ,  Joo Jun ,  Sang Lee ,  Chon Kyong ,  Ho Jeong

    发明人： Jin Kim ,  Hun Hahm ,  Hyung Kim ,  Jin Kim ,  Joo Jun ,  Sang Lee ,  Chon Kyong ,  Ho Jeong

    IPC分类号： H01L33/00

    CPC分类号： H01L33/54 ,  H01L33/60

    摘要： The present invention relates to a dipolar LED and a dipolar LED module incorporating the same, in which an upper hemisphere-shaped base houses an LED chip therein and adapted to radiate light from the LED chip to the outside, and a pair of reflecting surfaces placed at opposed top portions of the base in a configuration symmetric about an imaginary vertical plane. The vertical plane passes through the center of the LED chip perpendicularly to a light-emitting surface of the LED chip. The reflecting surfaces are extended upward away from the top portions of the base to reflect light from the LED chip away from the imaginary vertical plane. A pair of radiating surfaces are placed outside the reflecting surfaces, respectively, to radiate light from the reflecting surfaces to the outside. In this way, light emission from the LED chip can be concentrated in both lateral directions.

    摘要翻译： 本发明涉及一种双极性LED和包括其的双极LED模块，其中上半球形基座容纳LED芯片并适于将来自LED芯片的光辐射到外部，并且一对反射表面被放置 在基部的相对的顶部部分处于关于假想垂直平面对称的构造中。 垂直平面通过LED芯片的中心垂直于LED芯片的发光表面。 反射面向上延伸离开基座的顶部，以将来自LED芯片的光反射离开虚拟垂直平面。 一对辐射表面分别放置在反射表面的外侧，以将来自反射表面的光辐射到外部。 以这种方式，来自LED芯片的光发射可以集中在两个横向上。

    Organic light emitting display device
    9.
    发明申请
    Organic light emitting display device 审中-公开
    有机发光显示装置

    公开(公告)号：US20070063205A1

    公开(公告)日：2007-03-22

    申请号：US11511111

    申请日：2006-08-28

    申请人： Tae Kang ,  Jin Kim ,  Mu Kim ,  Sun Kim ,  Noh Kwak ,  Sang Lee ,  Seong Lee ,  Seung Lee ,  Sok Noh ,  Jin Seong ,  Myung Song ,  Yeun Sung ,  Byeong Yoo

    发明人： Tae Kang ,  Jin Kim ,  Mu Kim ,  Sun Kim ,  Noh Kwak ,  Sang Lee ,  Seong Lee ,  Seung Lee ,  Sok Noh ,  Jin Seong ,  Myung Song ,  Yeun Sung ,  Byeong Yoo

    IPC分类号： H01L33/00

    CPC分类号： B41M5/265 ,  B41M5/38221 ,  H01L51/0013

    摘要： A laser induced thermal imaging (LITI) apparatus and a method of making an electronic device using the same are disclosed. The LITI apparatus includes a chamber, a substrate support, a contact frame, and a laser source or oscillator. The LITI apparatus transfers a transferable layer from a film donor device onto a surface of an intermediate electronic device. The LITI apparatus uses a magnetic force to provide a close contact between the transferable layer and the surface of the intermediate device. The magnetic force is generated by magnetic materials formed in two components of the LITI apparatus that are spaced apart interposing transferable layer and the surface of the intermediate device. Magnets or magnetic materials are formed in the two following components of the LITI apparatus: 1) the intermediate device and the film donor device; 2) the intermediate device and the contact frame; 3) the substrate support and the film donor device; or 4) the substrate support and the contact frame.

    摘要翻译： 公开了一种激光诱导热成像（LITI）装置和使用其的电子装置的制造方法。 LITI装置包括腔室，衬底支撑件，接触框架和激光源或振荡器。 LITI装置将可转移层从成膜剂装置转移到中间电子装置的表面上。 LITI装置使用磁力来提供可转移层与中间装置的表面之间的紧密接触。 磁力由形成在LITI装置的两个部件中的磁性材料产生，该两个部件是间隔开的中间转印层和中间装置的表面。 在LITI装置的以下两个部件中形成磁体或磁性材料：1）中间装置和薄膜供体装置; 2）中间装置和接触框架; 3）基底支撑体和薄膜供体装置; 或4）衬底支撑件和接触框架。

    Laser induced thermal imaging apparatus
    10.
    发明申请
    Laser induced thermal imaging apparatus 失效
    激光感应热成像仪

    公开(公告)号：US20070046072A1

    公开(公告)日：2007-03-01

    申请号：US11510997

    申请日：2006-08-28

    申请人： Tae Kang ,  Jin Kim ,  Mu Kim ,  Sun Kim ,  Noh Kwak ,  Sang Lee ,  Seong Lee ,  Seung Lee ,  Sok Noh ,  Jin Seong ,  Myung Song ,  Yeun Sung ,  Byeong Yoo

    发明人： Tae Kang ,  Jin Kim ,  Mu Kim ,  Sun Kim ,  Noh Kwak ,  Sang Lee ,  Seong Lee ,  Seung Lee ,  Sok Noh ,  Jin Seong ,  Myung Song ,  Yeun Sung ,  Byeong Yoo

    IPC分类号： B60R19/52

    CPC分类号： B41M5/265 ,  B41M5/38221 ,  H01L51/0013

    摘要： A laser induced thermal imaging (LITI) apparatus and a method of making an electronic device using the same are disclosed. The LITI apparatus includes a chamber, a substrate support, a contact frame, and a laser source or oscillator. The LITI apparatus transfers a transferable layer from a film donor device onto a surface of an intermediate electronic device. The LITI apparatus uses a magnetic force to provide a close contact between the transferable layer and the surface of the intermediate device. The magnetic force is generated by magnetic materials formed in two components of the LITI apparatus that are spaced apart interposing transferable layer and the surface of the intermediate device. Magnets or magnetic materials are formed in the two following components of the LITI apparatus: 1) the intermediate device and the film donor device; 2) the intermediate device and the contact frame; 3) the substrate support and the film donor device; or 4) the substrate support and the contact frame.

    摘要翻译： 公开了一种激光诱导热成像（LITI）装置和使用其的电子装置的制造方法。 LITI装置包括腔室，衬底支撑件，接触框架和激光源或振荡器。 LITI装置将可转移层从成膜剂装置转移到中间电子装置的表面上。 LITI装置使用磁力来提供可转移层与中间装置的表面之间的紧密接触。 磁力由形成在LITI装置的两个部件中的磁性材料产生，该两个部件是间隔开的中间转印层和中间装置的表面。 在LITI装置的以下两个部件中形成磁体或磁性材料：1）中间装置和薄膜供体装置; 2）中间装置和接触框架; 3）基底支撑体和薄膜供体装置; 或4）衬底支撑件和接触框架。