摘要:
A fuel for splitting water into hydrogen and an oxide component comprises a substantially solid pellet formed from a solid-like mixture of a solid-state source material capable of oxidizing in water to form hydrogen and a passivation surface layer of the oxide component, and a passivation preventing agent that is substantially inert to water in an effective amount to prevent passivation of the solid-state material during oxidation. The pellets are brought into contact with an alloy of the passivation preventing agent having a melting point temperature below that of the solid-like mixture to initiate the hydrogen-producing reaction at a lower temperature.
摘要:
A fuel for splitting water into hydrogen and an oxide component comprises a substantially solid pellet formed from a solid-like mixture of a solid-state source material capable of oxidizing in water to form hydrogen and a passivation surface layer of the oxide component, and a passivation preventing agent that is substantially inert to water in an effective amount to prevent passivation of the solid-state material during oxidation. The pellets may be introduced into water or other suitable oxidizer in a controlled rate to control the rate of reaction of the source material with the oxidizer, and thereby control the rate of formation of hydrogen. Methods are described for producing the solid-like mixture in varying weight percent of source material to passivation preventing agent.
摘要:
A fuel for splitting water into hydrogen and an oxide component comprises a substantially solid pellet formed from a solid-like mixture of a solid-state source material capable of oxidizing in water to form hydrogen and a passivation surface layer of the oxide component, and a passivation preventing agent that is substantially inert to water in an effective amount to prevent passivation of the solid-state material during oxidation. The pellets are brought into contact with an alloy of the passivation preventing agent having a melting point temperature below that of the solid-like mixture to initiate the hydrogen-producing reaction at a lower temperature.
摘要:
A light responsive device (10) has a body (12) that includes a matrix comprised of Group III-V material, the matrix having inclusions (14) comprised of a Group V material contained therein. The body is responsive to a presence of a light beam that has a spatially varying intensity for modifying in a corresponding spatially varying manner a distribution of trapped photoexcited charge carriers within the body. The distribution of trapped charge carriers induces a corresponding spatial variation in at least one optical property of the Group III-V material, such as the index of refraction of the Group III-V material and/or an absorption coefficient of the Group III-V material. The Group III-V material is comprised of LTG GaAs:As or LTG AlGaAs:As. In an optical storage medium embodiment of the invention the spatial variation in the intensity of the light beam results from a simultaneous application of a first light beam (LB1) and a second light beam (LB2) to the body, and from interference fringes resulting from an intersection of said first and second light beams.
摘要:
Resonant tunneling devices having improved peak-to-valley current ratios are disclosed. The resonant tunneling device comprises a quantum well layer surrounded by first and second barrier layers, the first and second barrier layers being comprised of an indirect first III-V compound semiconductor. The first barrier layer being formed on a substrate of a second III-V compound semiconductor having a lattice constant larger than the lattice constant of the first barrier layer thereby inducing a biaxial stress in the first barrier layer. The biaxial stress results in an energy shift at resonance that increases the peak to valley current ratio of the device.
摘要:
Submicron structure fabrication is accomplished by providing vapor chemical erosion of a compound crystal by suppressing the more volatile elements so that the less volatile element is provided with an anti-agglomeration and erosion rate limiting capability which can be followed by subsequent regrowth in the same environment. The erosion is sensitive to crystallographic orientation.
摘要:
A semiconductor photodetector is formed of interdigitated, metal-semiconductor-metal electrodes disposed on a surface of semi-insulating semiconductor material, gallium arsenide. Radiation such as infra-red or visible light is converted to an electric current flowing between the electrodes upon application of a bias voltage between the electrodes. A Schottky barrier at the junction of each electrode surface and the semiconductor surface limits current flow to that produced by photons. Tunneling of charge carriers of the current under the Schottky barrier, which tunneling results from the entrapment of charge carriers on the semiconductor surface, is inhibited by the production of a heterojunction surface layer upon the foregoing surface between the electrodes to repulse the charge carriers and prevent their entrapment at the surface. The heterojunction layer may be doped to enhance the repulsion of charge carriers. The heterojunction surface layer is of sufficient thickness to prevent tunneling of photogenerated carriers to a noncontacted region of the surface of the heterojunction layer and to also permit efficient repulsion of charge carriers from the surface. Longer wavelength photodetectors may also be formed in this way by providing misfit dislocation regions between the interaction region, which may be GaInAs, and a GaAs substrate, thereby providing a pseudo-morphic interaction region which is graded back to a heterojunction layer at the surface.
摘要:
A layer of an amphoteric dopant on the surface of a group III-V intermetallic semiconductor crystal will diffuse into the crystal surface in a heating cycle forming a stable contact. The contact can be ohmic or rectifying depending on the localized presence of an excess of one crystal ingredient. A layer of Si on GaAs upon heating forms a rectifying contact. When the layer of Si contains As, the contact is ohmic.
摘要:
Optical-to-electrical logic operations may be performed employing as each logic variable a different light wavelength and providing an optical-to-electrical semiconductor converter such that each particular wavelength responsive optical energy receiving region is an updoped region bounded by a thin tunneling junction having a thickness of the order of the mean free path of a carrier in the tunneling region.
摘要:
A highly efficient monolithic direct bandgap lattice accommodated semiconductor structure in which an input signal is converted to photons on one side of an insulating region and the photons are reconverted on the opposite side of the insulating region to an output signal in a multi-oblique segment region. The structure converts AC to DC, AC to AC and DC to DC signals and is adapted to the efficient V-groove multijunction solar cell.