公开(公告)号：US20050104146A1

公开(公告)日：2005-05-19

申请号：US10713510

申请日：2003-11-14

Applicant: Janice Nickel ,  Manoj Bhattacharyya ,  Frederick Perner

Inventor： Janice Nickel ,  Manoj Bhattacharyya ,  Frederick Perner

IPC: H01L27/105 ,  G11C11/14 ,  G11C11/16 ,  H01L21/8229 ,  H01L21/8246 ,  H01L27/22 ,  H01L29/76 ,  H01L29/82 ,  H01L43/00 ,  H01L43/08

CPC classification number: H01L27/222 ,  G11C11/16 ,  G11C11/1675 ,  H01L43/08

Abstract: A thin film device and a method of providing thermal assistance therein is disclosed. Accordingly, a heater material is utilized to thermally assist in the operation of the thin film device. By utilizing a heater material to thermally assist in the operation of the thin film device, a substantial improvement in the accuracy and performance of the thin film device is achieved. A first aspect of the present invention is a thin film device. The thin film device includes at least one patterned thin film layer, a heater material coupled to the at least one patterned thin film layer for providing thermal assistance to the at least one of the patterned thin film layers and a conductor coupled to the heater material for supplying energy to the heater material.

Abstract translation: 公开了薄膜装置及其中提供热辅助的方法。 因此，使用加热器材料来热辅助薄膜器件的操作。 通过利用加热材料热辅助薄膜器件的操作，实现了薄膜器件的精度和性能的显着提高。 本发明的第一方面是一种薄膜器件。 所述薄膜器件包括至少一个图案化薄膜层，耦合到所述至少一个图案化薄膜层的加热器材料，用于向所述图案化薄膜层中的至少一个提供热辅助，以及耦合到所述加热器材料的导体， 向加热器材料供应能量。

公开(公告)号：US20050185456A1

公开(公告)日：2005-08-25

申请号：US11112691

申请日：2005-04-21

Applicant: Janice Nickel ,  Manoj Bhattacharyya ,  Frederick Perner

Inventor： Janice Nickel ,  Manoj Bhattacharyya ,  Frederick Perner

IPC: H01L27/105 ,  G11C11/14 ,  G11C11/16 ,  H01L21/8229 ,  H01L21/8246 ,  H01L27/22 ,  H01L29/76 ,  H01L29/82 ,  H01L43/00 ,  H01L43/08

CPC classification number: H01L27/222 ,  G11C11/16 ,  G11C11/1675 ,  H01L43/08

Abstract: A thin film device and a method of providing thermal assistance therein is disclosed. Accordingly, a heater material is utilized to thermally assist in the operation of the thin film device. By utilizing a heater material to thermally assist in the operation of the thin film device, a substantial improvement in the accuracy and performance of the thin film device is achieved. A first aspect of the present invention is a thin film device. The thin film device includes at least one patterned thin film layer, a heater material coupled to the at least one patterned thin film layer for providing thermal assistance to the at least one of the patterned thin film layers and a conductor coupled to the heater material for supplying energy to the heater material.

Abstract translation: 公开了薄膜装置及其中提供热辅助的方法。 因此，使用加热器材料来热辅助薄膜器件的操作。 通过利用加热材料热辅助薄膜器件的操作，实现了薄膜器件的精度和性能的显着提高。 本发明的第一方面是一种薄膜器件。 所述薄膜器件包括至少一个图案化薄膜层，耦合到所述至少一个图案化薄膜层的加热器材料，用于向所述图案化薄膜层中的至少一个提供热辅助，以及耦合到所述加热器材料的导体， 向加热器材料供应能量。

公开(公告)号：US20050195649A1

公开(公告)日：2005-09-08

申请号：US11112815

申请日：2005-04-21

Applicant: Janice Nickel ,  Manoj Bhattacharyya

Inventor： Janice Nickel ,  Manoj Bhattacharyya

IPC: G11C11/15 ,  G11C11/16 ,  G11C11/56 ,  G11C11/00

CPC classification number: H01L43/08 ,  G11C11/15 ,  G11C11/16 ,  G11C11/5607 ,  G11C2211/5615 ,  G11C2211/5616

Abstract: A magnetic memory cell includes a first magneto-resistive device and a second magneto-resistive device. The first magneto-resistive device has a first sense layer. The second magneto-resistive device is connected in series with the first magneto-resistive device. The second magneto-resistive device has a second sense layer. At least one controlled nucleation site is placed on at least one of the first sense layer and the second sense layer.

Abstract translation: 磁存储单元包括第一磁阻装置和第二磁阻装置。 第一磁阻装置具有第一感测层。 第二磁阻装置与第一磁阻装置串联连接。 第二磁阻装置具有第二感测层。 至少一个控制的成核位置放置在第一感测层和第二感测层中的至少一个上。

公开(公告)号：US20050167657A1

公开(公告)日：2005-08-04

申请号：US11080951

申请日：2005-03-14

Applicant: Janice Nickel ,  Manoj Bhattacharyya

Inventor： Janice Nickel ,  Manoj Bhattacharyya

IPC: G11C11/14 ,  G11C11/15 ,  G11C11/16 ,  G11C11/56 ,  H01F10/30 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/00 ,  H01L43/08

CPC classification number: G11C11/16 ,  G11C11/5607 ,  G11C2211/5615 ,  G11C2211/5616 ,  H01L43/08

Abstract: A magnetic memory cell includes first and second magneto-resistive devices connected in series. The first and second magneto-resistive devices have sense layers with different coercivities. Magnetic Random Access Memory (MRAM) devices may include arrays of these memory cells.

公开(公告)号：US20050101035A1

公开(公告)日：2005-05-12

申请号：US10846101

申请日：2004-11-10

Applicant: Janice Nickel ,  Thomas Anthony ,  Manish Sharma ,  Manoj Bhattacharyya

Inventor： Janice Nickel ,  Thomas Anthony ,  Manish Sharma ,  Manoj Bhattacharyya

IPC: H01L21/00 ,  H01L43/12

CPC classification number: H01L43/12

Abstract: A magneto-resistive element is constructed. A ferromagnetic sense layer is deposited on a surface. The ferromagnetic sense layer is patterned. An etch is performed in preparation for depositing a dielectric layer. The dielectric layer is deposited over the sense layer. A ferromagnetic pinned layer is deposited over the dielectric layer.

Abstract translation: 构造了一个磁阻元件。 铁磁感应层沉积在表面上。 铁磁感应层被图案化。 进行蚀刻以准备沉积介电层。 介电层沉积在感应层上。 在电介质层上沉积铁磁钉扎层。

公开(公告)号：US20060215444A1

公开(公告)日：2006-09-28

申请号：US11089688

申请日：2005-03-24

Applicant: Frederick Perner ,  Janice Nickel ,  Lung Tran

Inventor： Frederick Perner ,  Janice Nickel ,  Lung Tran

IPC: G11C11/00

CPC classification number: G11C11/16 ,  G11C11/1675

Abstract: An information storage device is provided. The information storage device may be a magnetic random access memory (MRAM) device including a resistive cross point array of spin dependent tunneling (SDT) junctions or magnetic memory elements, with word lines extending along rows of the SDT junctions and bit lines extending along the columns of the SDT junctions. The present design includes a plurality of heating elements connected in series with associated magnetic memory elements, each heating element comprising a diode. Voltage applied to a magnetic memory element and associated heating element causes reverse current to flow through the diode, thereby producing heat from the diode and heating the magnetic memory element, thereby facilitating the write function of the device.

Abstract translation: 提供信息存储装置。 信息存储装置可以是包括自旋相关隧道（SDT）结或磁存储元件的电阻交叉点阵列的磁性随机存取存储器（MRAM）装置，其中字线沿着沿着SDT结的行和沿着 SDT路口的列。 本设计包括与相关联的磁存储元件串联连接的多个加热元件，每个加热元件包括二极管。 施加到磁存储元件和相关联的加热元件的电压导致反向电流流过二极管，从而从二极管产生热量并加热磁存储元件，从而有助于器件的写入功能。

公开(公告)号：US20060283465A1

公开(公告)日：2006-12-21

申请号：US11155985

申请日：2005-06-16

Applicant: Janice Nickel ,  Peter Hartwell ,  Sean Zhang

Inventor： Janice Nickel ,  Peter Hartwell ,  Sean Zhang

IPC: G06F19/00 ,  A61K9/22

CPC classification number: A61B5/076 ,  A61B5/0205 ,  A61B5/024 ,  A61B5/0816 ,  A61B5/14532 ,  A61B5/4839 ,  A61M5/148 ,  A61M5/1723 ,  A61M2037/0023 ,  A61M2205/0244 ,  A61M2205/0294 ,  A61M2205/3515 ,  A61M2205/3523 ,  A61M2205/3561 ,  A61M2205/3569 ,  A61M2205/3584 ,  A61M2205/3592 ,  A61M2205/6054 ,  A61M2205/8212 ,  A61M2205/825 ,  A61M2205/8256 ,  A61M2205/8293 ,  A61M2230/201 ,  G06Q50/24

Abstract: A smart drug delivery system is disclosed. The system includes a sensor component, an analytical component coupled to the sensor component and a drug delivery component coupled to the analytical component for delivering a drug to a host.

Abstract translation: 公开了一种智能药物递送系统。 该系统包括传感器组件，耦合到传感器组件的分析组件和耦合到分析组件的药物递送组件，用于将药物递送到宿主。

公开(公告)号：US20060163629A1

公开(公告)日：2006-07-27

申请号：US11034418

申请日：2005-01-12

Applicant: Janice Nickel

Inventor： Janice Nickel

IPC: H01L21/00 ,  H01L29/94

CPC classification number: G11C11/16 ,  G11C11/1675 ,  H01L27/224

Abstract: An exemplary array of thermally-assisted magnetic memory structures includes a plurality of magnetic memory elements, each magnetic memory element being near a diode. A diode near a selected magnetic memory element can be heated by absorbing energy from a radio frequency electromagnetic field. The heated diode can be used to elevate the temperature of the selected magnetic memory element to thermally assist in switching the magnetic state of the magnetic memory element upon application of a write current.

Abstract translation: 热辅助磁存储结构的示例性阵列包括多个磁存储元件，每个磁存储元件靠近二极管。 可以通过从射频电磁场吸收能量来加热选定的磁存储元件附近的二极管。 加热的二极管可用于升高所选择的磁存储元件的温度，以便在施加写入电流时热辅助切换磁存储元件的磁状态。

公开(公告)号：US20060113219A1

公开(公告)日：2006-06-01

申请号：US10977998

申请日：2004-10-29

Applicant: Janice Nickel

Inventor： Janice Nickel

IPC: B03C1/00

CPC classification number: B03C1/002 ,  B03C1/031

Abstract: A separation operation for particles includes loading particles of various sizes and responsive to electromagnetic forces into a starting position upon a separation collection component, sending a first current through a first set of conductors in a first direction drawing a subset of larger particles toward a first adjacent position to the starting position and sending successively lower currents compared to the first current through a second set of conductors in the first direction drawing a subset of smaller particles toward a second adjacent position to the starting position. A collection operation includes sending a lower current through a first set of conductors near a subset of smaller particles that forces the smaller particles into a first particle collection point and sending a higher current through the second set of conductors to collect a subset of larger particles into a second particle collection point.

公开(公告)号：US20060043444A1

公开(公告)日：2006-03-02

申请号：US10934922

申请日：2004-09-02

Applicant: Janice Nickel

Inventor： Janice Nickel

IPC: H01L29/94

CPC classification number: H01L27/222 ,  H01L43/08 ,  H01L43/12

Abstract: An aspect of the present invention is a thin film device. The thin film device includes at least one patterned thin film layer, a thermally conductive material coupled to at least one of the patterned thin-film layer and an electrically and thermally isolating material in contact with the thermally conductive material.

Abstract translation: 本发明的一个方面是薄膜装置。 薄膜器件包括至少一个图案化薄膜层，耦合到图案化薄膜层中的至少一个和与导热材料接触的电气和隔热材料的导热材料。