公开(公告)号：US08390114B2

公开(公告)日：2013-03-05

申请号：US12835921

申请日：2010-07-14

申请人： Jae Myun Kim ,  Seung Jee Kim ,  Ki Bum Kim

发明人： Jae Myun Kim ,  Seung Jee Kim ,  Ki Bum Kim

IPC分类号： H01L23/34

CPC分类号： H01L25/0657 ,  H01L24/16 ,  H01L24/32 ,  H01L24/33 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L2224/05599 ,  H01L2224/13099 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/451 ,  H01L2224/48145 ,  H01L2224/48147 ,  H01L2224/48227 ,  H01L2224/4911 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2224/85399 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06562 ,  H01L2225/06572 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/014 ,  H01L2924/078 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012 ,  H01L2924/00011 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/45099

摘要： A semiconductor package includes a substrate, a first semiconductor chip module attached to the substrate, a conductive connection member attached to the first semiconductor chip module, and a second semiconductor chip module attached to the conductive connection member. The first and second semiconductor chip modules are formed to have step like shapes to and extend laterally in opposite directions so as to define a zigzag arrangement together.

摘要翻译： 半导体封装包括衬底，附着到衬底的第一半导体芯片模块，附接到第一半导体芯片模块的导电连接构件和附接到导电连接构件的第二半导体芯片模块。 第一和第二半导体芯片模块形成为具有阶梯形形状并且沿相反方向横向延伸，以便将锯齿形布置在一起。

公开(公告)号：US08304879B2

公开(公告)日：2012-11-06

申请号：US12819279

申请日：2010-06-21

申请人： Da Un Nah ,  Jae Myun Kim ,  Tae Hoon Kim ,  Jung Tae Jeong ,  Bok Gyu Min ,  Ki Bum Kim

发明人： Da Un Nah ,  Jae Myun Kim ,  Tae Hoon Kim ,  Jung Tae Jeong ,  Bok Gyu Min ,  Ki Bum Kim

IPC分类号： H01L23/482

CPC分类号： H01L24/73 ,  H01L23/481 ,  H01L24/16 ,  H01L24/48 ,  H01L25/0657 ,  H01L2224/05554 ,  H01L2224/13025 ,  H01L2224/13099 ,  H01L2224/16145 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48108 ,  H01L2224/48227 ,  H01L2224/73257 ,  H01L2224/73265 ,  H01L2225/0651 ,  H01L2225/06562 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01075 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A spiral staircase shaped stacked semiconductor package is presented. The package includes a semiconductor chip module, a substrate and connection members. The semiconductor chip module includes at least two semiconductor chips which have chip selection pads and through-electrodes. The semiconductor chips are stacked such that the chip selection pads are exposed and the through-electrodes of the stacked semiconductor chips are electrically connected to one another. The substrate has the semiconductor chip module mounted thereto and has connection pads. The connection members electrically connect the chip selection pads to respective connection pads.

摘要翻译： 提出了一种螺旋状梯形堆叠半导体封装。 封装包括半导体芯片模块，基板和连接构件。 半导体芯片模块包括具有芯片选择焊盘和贯通电极的至少两个半导体芯片。 堆叠半导体芯片，使得芯片选择焊盘被暴露，并且堆叠的半导体芯片的贯通电极彼此电连接。 基板具有安装在其上的半导体芯片模块并具有连接焊盘。 连接构件将芯片选择焊盘电连接到相应的连接焊盘。

公开(公告)号：US06537890B2

公开(公告)日：2003-03-25

申请号：US09900905

申请日：2001-07-10

申请人： Seung Ki Joo ,  Ki Bum Kim ,  Yeo Geon Yoon

发明人： Seung Ki Joo ,  Ki Bum Kim ,  Yeo Geon Yoon

IPC分类号： H01L2176

CPC分类号： H01L29/6675 ,  H01L29/78648

摘要： A poly-silicon (poly-Si) thin film transistor (TFT) having a back bias effect is provided in order to enhance characteristics of a leakage current, a sub-threshold slope, and an on-current. The poly-Si TFT includes a glass substrate, an island type buried electrode pad formed of an conductive material on one side of the glass substrate where the back bias voltage is applied, a buffer layer formed of an insulation material on the whole surface of the glass substrate, and a poly-Si TFT formed on the upper portion of the buffer layer. A method of fabricating the TFT is also provided.

公开(公告)号：US06333214B1

公开(公告)日：2001-12-25

申请号：US09334895

申请日：1999-06-17

申请人： Ki Bum Kim ,  Tae Sik Yoon ,  Jang Yeon Kwon

发明人： Ki Bum Kim ,  Tae Sik Yoon ,  Jang Yeon Kwon

IPC分类号： H01L21335

CPC分类号： B82Y30/00 ,  B82Y10/00 ,  G11C11/56 ,  G11C2216/08 ,  H01L21/28273 ,  H01L29/7887 ,  H01L29/7888

摘要： A semiconductor memory having a multilevel quantum dot structure is formed by alternatively disposing conductive layers and insulation layers, and processing these layers so that quantum dots are formed in the conductive layers. The writing and reading of data into the semiconductor memory are achieved by using the principle of Coulomb blockade and quantized voltage drops. The size and distribution of the quantum dots are controlled by agglomeration, selective oxidation, etc. in order to achieve the desired quantum dot layer structure so that the immigration of charges between a semiconductor channel and each quantum dot layer is different.

摘要翻译： 通过交替地设置导电层和绝缘层来形成具有多层量子点结构的半导体存储器，并且处理这些层，使得在导电层中形成量子点。 通过使用库仑阻塞和量子化电压降的原理，实现对半导体存储器的数据写入和读取。 通过聚集，选择性氧化等来控制量子点的尺寸和分布，以实现期望的量子点层结构，使得半导体沟道和每个量子点层之间的电荷迁移不同。

公开(公告)号：US08876936B2

公开(公告)日：2014-11-04

申请号：US13323343

申请日：2011-12-12

申请人： Ki Bum Kim ,  Eui Jun Kim ,  Seong Jin Kim ,  Sung Kweon Jang ,  Ki Jung Kim ,  Shin Gyu Kim ,  Jong Kwan Park ,  Sung Tae Choi

发明人： Ki Bum Kim ,  Eui Jun Kim ,  Seong Jin Kim ,  Sung Kweon Jang ,  Ki Jung Kim ,  Shin Gyu Kim ,  Jong Kwan Park ,  Sung Tae Choi

IPC分类号： C22C38/04 ,  B22F3/12 ,  C22C27/04 ,  C22C38/44 ,  C22C38/00 ,  B22F5/10 ,  C22C38/52 ,  C22C19/07 ,  C22C33/02 ,  C22C27/06 ,  B22F1/00

CPC分类号： B22F1/00 ,  B22F3/12 ,  B22F5/008 ,  B22F5/106 ,  C22C19/07 ,  C22C27/04 ,  C22C27/06 ,  C22C33/0285 ,  C22C38/002 ,  C22C38/04 ,  C22C38/44 ,  C22C38/52 ,  F01L3/02

摘要： Disclosed herein is an engine valve seat, including: iron (Fe) as a main component; about 0.6˜1.2 wt % of carbon (C); about 1.0˜3.0 wt % of nickel (Ni); about 8.0˜11.0 wt % of cobalt (Co); about 3.0˜6.0 wt % of chromium (Cr); about 4.0˜7.0 wt % of molybdenum (Mo); about 0.5˜2.5 wt % of tungsten (W); about 1.0˜3.0 wt % of manganese (Mn); about 0.2˜1.0 wt % of calcium (Ca); and other inevitable impurities.

摘要翻译： 这里公开了一种发动机阀座，包括：铁（Fe）作为主要成分; 约0.6〜1.2重量％的碳（C）; 约1.0〜3.0重量％的镍（Ni）; 约8.0〜11.0重量％的钴（Co）; 约3.0〜6.0重量％的铬（Cr）; 约4.0〜7.0重量％的钼（Mo）; 约0.5〜2.5重量％的钨（W）; 约1.0〜3.0重量％的锰（Mn）; 约0.2〜1.0重量％的钙（Ca）; 和其他不可避免的杂质。

公开(公告)号：US20130051062A1

公开(公告)日：2013-02-28

申请号：US13372857

申请日：2012-02-14

申请人： Song Eun Lee ,  Bong Kul Min ,  Kyung Ho Shin ,  Ki Bum Kim

发明人： Song Eun Lee ,  Bong Kul Min ,  Kyung Ho Shin ,  Ki Bum Kim

IPC分类号： F21V8/00

CPC分类号： H05K1/0209 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/1301 ,  H05K2201/066 ,  H05K2201/10106 ,  H01L2924/00014 ,  H01L2924/00

摘要： Provided are a light emitting module and a backlight unit. The light emitting module comprises a module board comprising a plurality of first and second pads and a plurality of protrusion holes, a heatsink plate corresponding to a second surface opposite to a first surface of the module board, the heatsink plate comprising a plurality of protrusions respectively inserted into the protrusion holes of the module board, and a plurality of light emitting devices, each comprising a heatsink frame connected to the protrusions of the heatsink plate which comprises a first frame part on which the plurality of protrusions are disposed and a second frame part folded from the first frame part and disposed under the module board.

摘要翻译： 提供了发光模块和背光单元。 发光模块包括：模块板，包括多个第一和第二焊盘和多个突出孔，散热板对应于与模块板的第一表面相对的第二表面，散热板分别包括多个突起 插入到模块板的突出孔中的多个发光装置和多个发光装置，每个发光装置包括连接到散热板的突起的散热器框架，该散热器框架包括设置有多个突起的第一框架部分和第二框架部分 从第一框架部分折叠并设置在模块板下。

公开(公告)号：US07730730B2

公开(公告)日：2010-06-08

申请号：US11274337

申请日：2005-11-16

申请人： Do Yong Ha ,  Ho Jong Jeong ,  Ki Bum Kim ,  Jin Ha Choi ,  Jae Sik Kang

发明人： Do Yong Ha ,  Ho Jong Jeong ,  Ki Bum Kim ,  Jin Ha Choi ,  Jae Sik Kang

IPC分类号： F25B7/00 ,  F25D29/00 ,  F25D17/00

CPC分类号： F25B13/00 ,  F25B2313/02331 ,  F25B2313/02334 ,  F25B2600/2513

摘要： A control method of a multi-air conditioner in which a plurality of indoor units is connected to one outdoor unit and refrigerant flow amount is adjusted by electronic expansion valves comprises a share step in which a plurality of indoor units exchanges their operation information, a comparison and judgment step in which each above indoor unit compares and judges its operation status based on the exchanged operation information, and an adjustment step in which each above indoor unit adjusts refrigerant flow amount supplied to each indoor unit based on the compared and judged operation status.

摘要翻译： 通过电子膨胀阀调节多个室内机连接到一个室外机和制冷剂流量的多空调机的控制方法包括：多个室内机组交换其运转信息，比较 以及判断步骤，其中每个上述室内单元基于所交换的操作信息来比较和判断其操作状态，以及调节步骤，其中每个上述室内单元基于所比较和判断的运行状态来调节提供给每个室内单元的制冷剂流量。

公开(公告)号：US06936504B2

公开(公告)日：2005-08-30

申请号：US10355009

申请日：2003-01-31

申请人： Seung Ki Joo ,  Ki Bum Kim ,  Yeo Geon Yoon

发明人： Seung Ki Joo ,  Ki Bum Kim ,  Yeo Geon Yoon

IPC分类号： H01L21/336 ,  H01L29/786 ,  H01L21/84

CPC分类号： H01L29/6675 ,  H01L29/78648

摘要： A poly-silicon (poly-Si) thin film transistor (TFT) having a back bias effect is provided in order to enhance characteristics of a leakage current, a sub-threshold slope, and an on-current. The poly-Si TFT includes a glass substrate, an island type buried electrode pad formed of an conductive material on one side of the glass substrate where the back bias voltage is applied, a buffer layer formed of an insulation material on the whole surface of the glass substrate, and a poly-Si TFT formed on the upper portion of the buffer layer. A method of fabricating the TFT is also provided.

摘要翻译： 提供具有背偏置效应的多晶硅（poly-Si）薄膜晶体管（TFT），以增强泄漏电流，亚阈值斜率和导通电流的特性。 多晶硅TFT包括玻璃基板，由玻璃基板一侧的导电材料形成的背面偏置电压的岛状掩埋电极焊盘，在绝缘材料的整个表面上形成的缓冲层 玻璃基板和形成在缓冲层的上部的多晶硅TFT。 还提供了制造TFT的方法。

公开(公告)号：US06657253B2

公开(公告)日：2003-12-02

申请号：US09986684

申请日：2001-11-09

申请人： Ki Bum Kim ,  Tae Sik Yoon ,  Jang Yeon Kwon

发明人： Ki Bum Kim ,  Tae Sik Yoon ,  Jang Yeon Kwon

IPC分类号： H01L29788

CPC分类号： B82Y30/00 ,  B82Y10/00 ,  G11C11/56 ,  G11C2216/08 ,  H01L21/28273 ,  H01L29/7887 ,  H01L29/7888

摘要： Memory of a multilevel quantum dot structure and a method for fabricating the same, is disclosed, the method including the steps of (1) forming a first insulating layer on a substrate, (2) repeating formation of a conductive layer and a second insulating layer on the first insulating layer at least once, and (3) agglomerating each of the conductive layers to form quantized dot layers.

公开(公告)号：US08610156B2

公开(公告)日：2013-12-17

申请号：US12720235

申请日：2010-03-09

申请人： Ki Bum Kim

发明人： Ki Bum Kim

IPC分类号： H01L33/48

CPC分类号： H01L33/62 ,  H01L33/483 ,  H01L33/486 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/00014

摘要： Embodiments include a light emitting device package. The light emitting device package comprises a housing including a cavity; a light emitting device positioned in the cavity; a lead frame including a first section electrically connected to the light emitting device in the cavity, a second section, which penetrates the housing, extending from the first section and a third section, which is exposed to outside air, extending from the second section; and a metal layer positioned on an area defined by a distance which is distant from the housing in the second section of the lead frame.