发明授权
US06936504B2 Poly-silicon thin film transistor having back bias effects and fabrication method thereof
失效
具有背偏置效应的多晶硅薄膜晶体管及其制造方法
- 专利标题： Poly-silicon thin film transistor having back bias effects and fabrication method thereof
- 专利标题（中）： 具有背偏置效应的多晶硅薄膜晶体管及其制造方法
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申请号： US10355009申请日： 2003-01-31
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公开(公告)号： US06936504B2公开(公告)日： 2005-08-30
- 发明人: Seung Ki Joo , Ki Bum Kim , Yeo Geon Yoon
- 申请人： Seung Ki Joo , Ki Bum Kim , Yeo Geon Yoon
- 申请人地址： KR Seoul
- 专利权人： Neopoly Inc.
- 当前专利权人： Neopoly Inc.
- 当前专利权人地址： KR Seoul
- 代理机构： Rosenberg, Klein & Lee
- 优先权： KR2000-54311 20000915
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L29/786 ; H01L21/84
摘要：
A poly-silicon (poly-Si) thin film transistor (TFT) having a back bias effect is provided in order to enhance characteristics of a leakage current, a sub-threshold slope, and an on-current. The poly-Si TFT includes a glass substrate, an island type buried electrode pad formed of an conductive material on one side of the glass substrate where the back bias voltage is applied, a buffer layer formed of an insulation material on the whole surface of the glass substrate, and a poly-Si TFT formed on the upper portion of the buffer layer. A method of fabricating the TFT is also provided.
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