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公开(公告)号:US10790222B2
公开(公告)日:2020-09-29
申请号:US16361116
申请日:2019-03-21
申请人: Invensas Corporation
发明人: Javier A. Delacruz , Belgacem Haba , Wael Zohni , Liang Wang , Akash Agrawal
IPC分类号: H01L21/48 , H01L23/498 , H01L23/00
摘要: A microelectronic assembly including first and second laminated microelectronic elements is provided. A patterned bonding layer is disposed on a face of each of the first and second laminated microelectronic elements. The patterned bonding layers are mechanically and electrically bonded to form the microelectronic assembly.
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公开(公告)号:US10546834B2
公开(公告)日:2020-01-28
申请号:US16246863
申请日:2019-01-14
申请人: Invensas Corporation
发明人: Liang Wang , Rajesh Katkar
IPC分类号: H01L21/56 , H01L25/065 , H01L23/31 , H01L25/00 , H01L21/768 , H01L23/00
摘要: Apparatuses and methods are described. This apparatus includes a bridge die having first contacts on a die surface being in a molding layer of a reconstituted wafer. The reconstituted wafer has a wafer surface including a layer surface of the molding layer and the die surface. A redistribution layer on the wafer surface includes electrically conductive and dielectric layers to provide conductive routing and conductors. The conductors extend away from the die surface and are respectively coupled to the first contacts at bottom ends thereof. At least second and third IC dies respectively having second contacts on corresponding die surfaces thereof are interconnected to the bridge die and the redistribution layer. A first portion of the second contacts are interconnected to top ends of the conductors opposite the bottom ends thereof in part for alignment of the at least second and third IC dies to the bridge die.
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公开(公告)号:US20190341361A1
公开(公告)日:2019-11-07
申请号:US16514104
申请日:2019-07-17
申请人: Invensas Corporation
发明人: Liang Wang , Ilyas Mohammed , Masud Beroz
IPC分类号: H01L23/00 , H01L21/02 , H01L21/683 , H01L23/544 , H01L25/00 , H01L33/00 , H01L27/02
摘要: High yield substrate assembly. In accordance with a first method embodiment, a plurality of piggyback substrates are attached to a carrier substrate. The edges of the plurality of the piggyback substrates are bonded to one another. The plurality of piggyback substrates are removed from the carrier substrate to form a substrate assembly. The substrate assembly is processed to produce a plurality of integrated circuit devices on the substrate assembly. The processing may use manufacturing equipment designed to process wafers larger than individual instances of the plurality of piggyback substrates.
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公开(公告)号:US10332854B2
公开(公告)日:2019-06-25
申请号:US15332533
申请日:2016-10-24
申请人: Invensas Corporation
发明人: Rajesh Katkar , Gabriel Z. Guevara , Xuan Li , Cyprian Emeka Uzoh , Guilian Gao , Liang Wang
摘要: A microelectronic package can include a substrate having a first surface and a second surface opposite therefrom, the substrate having a first conductive element at the first surface, and a plurality of wire bonds, each of the wire bonds having a base electrically connected to a corresponding one of the first conductive elements and having a tip remote from the base, each wire bond having edge surfaces extending from the tip toward the base. The microelectronic package can also include an encapsulation having a major surface facing away from the first surface of the substrate, the encapsulation having a recess extending from the major surface in a direction toward the first surface of the substrate, the tip of a first one of the wire bonds being disposed within the recess, and an electrically conductive layer overlying an inner surface of the encapsulation exposed within the recess, the electrically conductive layer overlying and electrically connected with the tip of the first one of the wire bonds.
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公开(公告)号:US20190096849A1
公开(公告)日:2019-03-28
申请号:US16197686
申请日:2018-11-21
申请人: Invensas Corporation
发明人: Charles G. Woychik , Cyprian Emeka Uzoh , Sangil Lee , Liang Wang , Guilian Gao
IPC分类号: H01L25/065 , H01L25/00 , H01L21/48 , H01L23/00 , H01L23/31
摘要: Representative implementations of devices and techniques provide a hybrid interposer for 3D or 2.5D package arrangements. A quantity of pockets is formed on a surface of a carrier in a predetermined pattern. The pockets are filled with a reflowable conductive material. Chip dice are coupled to the interposer carrier by fixing terminals of the dice into the pockets. The carrier may include topside and backside redistribution layers to provide fanout for the chip dice, for coupling the interposer to another carrier, board, etc. having a pitch greater than that of the chip dice.
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公开(公告)号:US10014243B2
公开(公告)日:2018-07-03
申请号:US15403679
申请日:2017-01-11
申请人: Invensas Corporation
发明人: Hong Shen , Liang Wang , Gabriel Z. Guevara , Rajesh Katkar , Cyprian Emeka Uzoh , Laura Wills Mirkarimi
IPC分类号: H01L23/498 , H01L21/48 , H01L25/065 , H01L25/00 , H01L23/00
CPC分类号: H01L23/49822 , H01L21/4853 , H01L21/4857 , H01L21/486 , H01L23/49805 , H01L23/49827 , H01L23/49838 , H01L24/09 , H01L24/48 , H01L25/0655 , H01L25/50 , H01L2224/16225 , H01L2224/48091 , H01L2224/48227 , H01L2924/00014 , H01L2924/15192 , H01L2224/05599 , H01L2224/45099 , H01L2224/85399
摘要: An interposer (110) has contact pads at the top and/or bottom surfaces for connection to circuit modules (e.g. ICs 112). The interposer includes a substrate made of multiple layers (110.i). Each layer can be a substrate (110S), possibly a ceramic substrate, with circuitry. The substrates extend vertically. Multiple interposers are fabricated in a single structure (310) made of vertical layers (310.i) corresponding to the interposers' layers. The structure is diced along horizontal planes (314) to provide the interposers. An interposer's vertical conductive lines (similar to through-substrate vias) can be formed on the substrates' surfaces before dicing and before all the substrates are attached to each other. Thus, there is no need to make through-substrate holes for the vertical conductive lines. Non-vertical features can also be formed on the substrates' surfaces before the substrates are attached to each other. Other embodiments are also provided.
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公开(公告)号:US09947643B2
公开(公告)日:2018-04-17
申请号:US15075899
申请日:2016-03-21
申请人: Invensas Corporation
发明人: Ilyas Mohammed , Masud Beroz , Liang Wang
IPC分类号: H01L33/62 , H01L25/16 , H01L33/06 , H01L33/22 , H01L33/32 , H01L33/60 , H01L33/00 , H01L33/58
CPC分类号: H01L25/167 , H01L33/0079 , H01L33/06 , H01L33/22 , H01L33/32 , H01L33/58 , H01L33/60 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要: Inverted optical device. In accordance with an embodiment of the present invention, a plurality of piggyback substrates are attached to a carrier wafer. The plurality of piggyback substrates are dissimilar in composition to the carrier wafer. The plurality of piggyback substrates are processed, while attached to the carrier wafer, to produce a plurality of integrated circuit devices. A flip wafer is attached to the plurality of light emitting diodes, away from the carrier wafer and the carrier wafer is removed. The plurality of light emitting diodes may be singulated to form individual light emitting diode devices.
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公开(公告)号:US09865675B2
公开(公告)日:2018-01-09
申请号:US15207837
申请日:2016-07-12
申请人: Invensas Corporation
发明人: Liang Wang , Rajesh Katkar , Hong Shen , Cyprian Emeka Uzoh
IPC分类号: H01L49/02
CPC分类号: H01L28/65 , H01L28/90 , H01L28/92 , H01L2224/16145 , H01L2224/16225 , H01L2924/15153 , H01L2924/15184 , H01L2924/15192 , H01L2924/16151 , H01L2924/16152 , H01L2924/16195 , H01L2924/181 , H01L2924/00012
摘要: In one embodiment, a method for making a 3D Metal-Insulator-Metal (MIM) capacitor includes providing a substrate having a surface, forming an array of upstanding rods or ridges on the surface, depositing a first layer of an electroconductor on the surface and the array of rods or ridges, coating the first electroconductive layer with a layer of a dielectric, and depositing a second layer of an electroconductor on the dielectric layer. In some embodiments, the array of rods or ridges can be made of a photoresist material, and in others, can comprise bonded wires.
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公开(公告)号:US09825002B2
公开(公告)日:2017-11-21
申请号:US15208985
申请日:2016-07-13
申请人: Invensas Corporation
发明人: Rajesh Katkar , Reynaldo Co , Scott McGrath , Ashok S. Prabhu , Sangil Lee , Liang Wang , Hong Shen
IPC分类号: H01L21/56 , H01L25/065 , H01L25/00 , H01L23/00
CPC分类号: H01L25/0652 , H01L24/19 , H01L24/96 , H01L24/97 , H01L25/50 , H01L2224/02335 , H01L2224/04105 , H01L2224/12105 , H01L2224/32145 , H01L2224/32225 , H01L2224/73267 , H01L2224/83005 , H01L2224/9222 , H01L2225/06506 , H01L2225/06555 , H01L2225/06582 , H01L2225/06589 , H01L2225/06596 , H01L2924/10252 , H01L2924/10253 , H01L2924/1032 , H01L2924/10329 , H01L2924/1037 , H01L2924/1436 , H01L2924/1438 , H01L2924/18162 , H01L2924/19107 , H01L2224/19
摘要: A microelectronic assembly includes a stack of semiconductor chips each having a front surface defining a respective plane of a plurality of planes. A chip terminal may extend from a contact at a front surface of each chip in a direction towards the edge surface of the respective chip. The chip stack is mounted to substrate at an angle such that edge surfaces of the chips face a major surface of the substrate that defines a second plane that is transverse to, i.e., not parallel to the plurality of parallel planes. An electrically conductive material electrically connects the chip terminals with corresponding substrate contacts.
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公开(公告)号:US20170323867A1
公开(公告)日:2017-11-09
申请号:US15147807
申请日:2016-05-05
申请人: Invensas Corporation
发明人: Liang Wang , Bongsub Lee , Belgacem Haba , Sangil Lee
IPC分类号: H01L25/065 , H01L23/00 , H01L25/00
CPC分类号: H01L25/0657 , H01L24/11 , H01L24/17 , H01L24/27 , H01L24/32 , H01L24/73 , H01L24/81 , H01L24/83 , H01L24/92 , H01L25/50 , H01L2224/11426 , H01L2224/1145 , H01L2224/11452 , H01L2224/11462 , H01L2224/11464 , H01L2224/13111 , H01L2224/13147 , H01L2224/13155 , H01L2224/16112 , H01L2224/16145 , H01L2224/27003 , H01L2224/2761 , H01L2224/27618 , H01L2224/2783 , H01L2224/2919 , H01L2224/32145 , H01L2224/73204 , H01L2224/8385 , H01L2224/9211 , H01L2225/06513 , H01L2924/01013 , H01L2924/01022 , H01L2924/01024 , H01L2924/01079 , H01L2924/0615 , H01L2924/0635 , H01L2924/0645 , H01L2924/00
摘要: A microelectronic assembly including an insulating layer having a plurality of nanoscale conductors disposed in a nanoscale pitch array therein and a pair of microelectronic elements is provided. The nanoscale conductors can form electrical interconnections between contacts of the microelectronic elements while the insulating layer can mechanically couple the microelectronic elements together.
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