公开(公告)号：US20030020115A1

公开(公告)日：2003-01-30

申请号：US10187580

申请日：2002-07-01

Applicant: International Rectifier Corp.

Inventor： Kyle Spring ,  Jianjun Cao

IPC: H01L031/113

CPC classification number: H01L29/7802 ,  H01L21/2815 ,  H01L29/0634 ,  H01L29/1095 ,  H01L29/41766 ,  H01L29/4232 ,  H01L29/42368 ,  H01L29/42372 ,  H01L29/42376 ,  H01L29/4933 ,  H01L29/4983 ,  H01L29/66719

Abstract: A MOS-gated semiconductor device is shown and described which includes deep implanted junctions and thick oxide spacers disposed over a substantial portion of common conduction regions.

Abstract translation: 示出并描述了MOS栅控半导体器件，其包括设置在公共导电区域的大部分上的深注入结和厚氧化物间隔物。

公开(公告)号：US20030089945A1

公开(公告)日：2003-05-15

申请号：US10044427

申请日：2001-11-09

Applicant: International Rectifier Corp.

Inventor： Thomas Herman ,  Harold Davis ,  Kyle Spring ,  Jianjun Cao

IPC: H01L031/113

CPC classification number: H01L29/7802 ,  H01L29/0847 ,  H01L29/1095 ,  H01L29/41766

Abstract: A vertical conduction MOSFET having a reduced on resistance RDSON as well as reduced threshold voltage Vth, and an improved resistance to punchthrough and walkout has an extremely shallow source diffusion, of less than 0.3 microns in depth and an extremely shallow channel diffusion, of less than about 3 microns in depth. In a P channel version, phosphorus is implanted into the bottom of a contact trench and into the channel region with an implant energy of 400 keV for a singly charged phosphorus ion or 200 keV for a doubly charged ion, thereby to prevent walkout of the threshold voltage.

Abstract translation: 具有降低的导通电阻RDSON和降低的阈值电压Vth的垂直导通MOSFET以及改进的穿通和迂回阻力具有小于0.3微米深度的极浅源极扩散和小于0.3微米的通道扩散。 约3微米深。 在P沟道版本中，磷被注入到接触沟槽的底部并且注入到沟道区域中，对于单电荷的磷离子或200keV的注入能量为400keV，用于双电荷离子，从而防止阈值 电压。

公开(公告)号：US20020137322A1

公开(公告)日：2002-09-26

申请号：US10094835

申请日：2002-03-07

Applicant: International Rectifier Corp.

Inventor： Kyle Spring ,  Jianjun Cao

IPC: H01L021/44 ,  H01L021/3205 ,  H01L021/4763 ,  H01L021/332 ,  H01L031/119 ,  H01L031/062 ,  H01L031/113 ,  H01L029/94 ,  H01L029/76

CPC classification number: H01L29/66719 ,  H01L29/4232 ,  H01L29/4238 ,  H01L29/66712 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A process for forming a power MOSFET enables the connection a metal gate electrode to the conductive polysilicon gates in the active area without an additional mask step. In the process, a groove is formed in the field oxide during the active area mask step. Conductive polysilicon is then formed over the active area and into the groove. At least one window is formed over the groove along with the mask window for forming the channel and source implant windows, and the polysilicon is etched to the silicon surface in the active area, but a strip is left in the groove. This strip is contacted by gate metal during metal deposition. Thus, gate metal is connected to the polysilicon without an added mask step.

Abstract translation: 用于形成功率MOSFET的工艺使得能够在没有额外的掩模步骤的情况下将金属栅电极连接到有源区中的导电多晶硅栅极。 在该过程中，在有源区掩模步骤期间，在场氧化物中形成凹槽。 然后在有源区域上形成导电多晶硅并进入沟槽。 至少一个窗口与用于形成沟道和源植入窗口的掩模窗口一起形成在沟槽上方，并且多晶硅被蚀刻到有源区域中的硅表面，但是条带留在沟槽中。 在金属沉积期间，该带与栅极金属接触。 因此，栅极金属连接到多晶硅而没有添加掩模步骤。

公开(公告)号：US20030006483A1

公开(公告)日：2003-01-09

申请号：US10112821

申请日：2002-03-28

Applicant: International Rectifier Corp.

Inventor： Kyle Spring ,  Jianjun Cao

IPC: H01L029/80

CPC classification number: H01L29/7802 ,  H01L29/1095 ,  H01L29/66712

Abstract: A MOSFET that includes short channel regions for a reduced RDSON, and narrowly spaced, relatively deep base regions for an improved breakdown voltage.

Abstract translation: 一个MOSFET，其包括用于减小的RDSON的短沟道区域和窄间隔的相对较深的基极区域，用于改善的击穿电压。

公开(公告)号：US20020149079A1

公开(公告)日：2002-10-17

申请号：US10120287

申请日：2002-04-10

Applicant: International Rectifier Corp.

Inventor： Kyle Spring

IPC: H01L023/58

CPC classification number: H01L29/7811 ,  H01L23/485 ,  H01L29/7802 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The oxide atop a P pad below the gate electrode has a cut completely through the oxide atop the P pad to prevent the drift of contamination ions, such as sodium ions from the periphery of a MOSgated device to the periphery of the active area, thus stabilizing the device threshold voltage under high temperature reverse bias. The cut may be filled with metal.

Abstract translation: 在栅极电极下面的P焊盘顶部的氧化物完全穿过P焊盘顶部的氧化物切割，以防止污染离子如钠离子从MOS器件周围迁移到有源区域周围，从而稳定 器件阈值电压在高温反向偏置下。 切割可以用金属填充。

公开(公告)号：US20020117687A1

公开(公告)日：2002-08-29

申请号：US10083060

申请日：2002-02-26

Applicant: International Rectifier Corp.

Inventor： Kyle Spring ,  Jianjun Cao ,  Thomas Herman

IPC: H01L031/0328

CPC classification number: H01L29/7802 ,  H01L29/0847 ,  H01L29/1095 ,  H01L29/41766 ,  H01L29/7811

Abstract: A vertical MOSFET has a substrate of a first conductivity type. A channel region of a second conductivity type is diffused into the substrate. A gate is disposed at least partially over the channel region. A source region of a second conductivity type is disposed proximate to the gate and adjacent to the channel region. The channel region includes a depletion implant area proximate to the gate. The depletion implant species is of the second conductivity type to reduce the concentration of the first conductivity type in the channel region without increasing the conductivity in the drain/drift region.

Abstract translation: 垂直MOSFET具有第一导电类型的衬底。 第二导电类型的沟道区域扩散到衬底中。 至少部分地在通道区域上设置栅极。 第二导电类型的源极区域设置在栅极附近并且邻近沟道区域。 沟道区域包括靠近栅极的耗尽植入区域。 耗尽注入种类具有第二导电类型，以减小沟道区中第一导电类型的浓度，而不增加漏极/漂移区中的导电性。