公开(公告)号：US20030089945A1

公开(公告)日：2003-05-15

申请号：US10044427

申请日：2001-11-09

Applicant: International Rectifier Corp.

Inventor： Thomas Herman ,  Harold Davis ,  Kyle Spring ,  Jianjun Cao

IPC: H01L031/113

CPC classification number: H01L29/7802 ,  H01L29/0847 ,  H01L29/1095 ,  H01L29/41766

Abstract: A vertical conduction MOSFET having a reduced on resistance RDSON as well as reduced threshold voltage Vth, and an improved resistance to punchthrough and walkout has an extremely shallow source diffusion, of less than 0.3 microns in depth and an extremely shallow channel diffusion, of less than about 3 microns in depth. In a P channel version, phosphorus is implanted into the bottom of a contact trench and into the channel region with an implant energy of 400 keV for a singly charged phosphorus ion or 200 keV for a doubly charged ion, thereby to prevent walkout of the threshold voltage.

Abstract translation: 具有降低的导通电阻RDSON和降低的阈值电压Vth的垂直导通MOSFET以及改进的穿通和迂回阻力具有小于0.3微米深度的极浅源极扩散和小于0.3微米的通道扩散。 约3微米深。 在P沟道版本中，磷被注入到接触沟槽的底部并且注入到沟道区域中，对于单电荷的磷离子或200keV的注入能量为400keV，用于双电荷离子，从而防止阈值 电压。

公开(公告)号：US20020117687A1

公开(公告)日：2002-08-29

申请号：US10083060

申请日：2002-02-26

Applicant: International Rectifier Corp.

Inventor： Kyle Spring ,  Jianjun Cao ,  Thomas Herman

IPC: H01L031/0328

CPC classification number: H01L29/7802 ,  H01L29/0847 ,  H01L29/1095 ,  H01L29/41766 ,  H01L29/7811

Abstract: A vertical MOSFET has a substrate of a first conductivity type. A channel region of a second conductivity type is diffused into the substrate. A gate is disposed at least partially over the channel region. A source region of a second conductivity type is disposed proximate to the gate and adjacent to the channel region. The channel region includes a depletion implant area proximate to the gate. The depletion implant species is of the second conductivity type to reduce the concentration of the first conductivity type in the channel region without increasing the conductivity in the drain/drift region.

Abstract translation: 垂直MOSFET具有第一导电类型的衬底。 第二导电类型的沟道区域扩散到衬底中。 至少部分地在通道区域上设置栅极。 第二导电类型的源极区域设置在栅极附近并且邻近沟道区域。 沟道区域包括靠近栅极的耗尽植入区域。 耗尽注入种类具有第二导电类型，以减小沟道区中第一导电类型的浓度，而不增加漏极/漂移区中的导电性。