Scalable and interoperable PHYLESS die-to-die IO solution

    公开(公告)号:US12159840B2

    公开(公告)日:2024-12-03

    申请号:US16910023

    申请日:2020-06-23

    Abstract: Embodiments disclosed herein include multi-die packages with interconnects between the dies. In an embodiment, an electronic package comprises a package substrate, and a first die over the package substrate. In an embodiment, the first die comprises a first IO bump map, where bumps of the first IO bump map have a first pitch. In an embodiment, the electronic package further comprises a second die over the package substrate. In an embodiment, the second die comprises a second IO bump map, where bumps of the second IO bump map have a second pitch that is different than the first pitch. In an embodiment, the electronic package further comprises interconnects between the first IO bump map and the second IO bump map.

    POWER-FORWARDING BRIDGE FOR INTER-CHIP DATA SIGNAL TRANSFER

    公开(公告)号:US20220199537A1

    公开(公告)日:2022-06-23

    申请号:US17127304

    申请日:2020-12-18

    Abstract: An integrated circuit (IC) package, comprising a substrate that comprises a bridge die embedded within a dielectric. A first die comprising a first input/output (I/O) transmitter and a second die comprising a second I/O receiver and electrically coupled to the bridge die. A first signal trace and a first power conductor are within the bridge die. The first signal trace and the first power conductor are electrically coupled to the first I/O transmitter and the second I/O receiver. The first signal trace is to carry a digital signal and the first power conductor to provide a voltage for the second I/O receiver to read the digital signal.

    FORWARDED SUPPLY VOLTAGE FOR DYNAMIC VOLTAGE AND FREQUENCY SCALING WITH STACKED CHIP PACKAGING ARCHITECTURE

    公开(公告)号:US20230245999A1

    公开(公告)日:2023-08-03

    申请号:US17588392

    申请日:2022-01-31

    CPC classification number: H01L25/0652 H01L23/5383 H01L23/5386 H04B3/02

    Abstract: Embodiments of the present disclosure provide a microelectronic assembly comprising: a first integrated circuit (IC) die in a first layer; an interposer in a second layer not coplanar with the first layer, the first layer coupled to the second layer by interconnects having a pitch of less than 10 micrometers between adjacent interconnects; and a first conductive pathway and a second conductive pathway in the interposer coupling the first IC die and a second IC die. The first IC die is configured to transmit at a first supply voltage through the first conductive pathway to a second IC die, the second IC die is configured to transmit to the first IC die through the second conductive pathway at a second supply voltage simultaneously with the first die transmitting at the first supply voltage, and the first supply voltage is different from the second supply voltage.

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