公开(公告)号：US20240332392A1

公开(公告)日：2024-10-03

申请号：US18737616

申请日：2024-06-07

申请人： Intel Corporation

发明人： Dan S. LAVRIC ,  Glenn A. GLASS ,  Thomas T. TROEGER ,  Suresh VISHWANATH ,  Jitendra Kumar JHA ,  John F. RICHARDS ,  Anand S. MURTHY ,  Srijit MUKHERJEE

IPC分类号： H01L29/45 ,  H01L21/28 ,  H01L21/285 ,  H01L29/08 ,  H01L29/161 ,  H01L29/49 ,  H01L29/66 ,  H01L29/78

CPC分类号： H01L29/45 ,  H01L21/28088 ,  H01L21/28518 ,  H01L29/0847 ,  H01L29/161 ,  H01L29/4966 ,  H01L29/66795 ,  H01L29/7851

摘要： Approaches for fabricating an integrated circuit structure including a titanium silicide material, and the resulting structures, are described. In an example, an integrated circuit structure includes a semiconductor fin above a substrate, a gate electrode over the top and adjacent to the sidewalls of a portion of the semiconductor fin. A titanium silicide material is in direct contact with each of first and second epitaxial semiconductor source or drain structures at first and second sides of the gate electrode. The titanium silicide material is conformal with and hermetically sealing a non-flat topography of each of the first and second epitaxial semiconductor source or drain structures. The titanium silicide material has a total atomic composition including 95% or greater stoichiometric TiSi2.

公开(公告)号：US20210408258A1

公开(公告)日：2021-12-30

申请号：US16912118

申请日：2020-06-25

申请人： Intel Corporation

发明人： Dan S. LAVRIC ,  Glenn A. GLASS ,  Thomas T. TROEGER ,  Suresh VISHWANATH ,  Jitendra Kumar JHA ,  John F. RICHARDS ,  Anand S. MURTHY ,  Srijit MUKHERJEE

IPC分类号： H01L29/45 ,  H01L29/78 ,  H01L29/08 ,  H01L29/161 ,  H01L29/49 ,  H01L21/28 ,  H01L21/285 ,  H01L29/66

摘要： Approaches for fabricating an integrated circuit structure including a titanium silicide material, and the resulting structures, are described. In an example, an integrated circuit structure includes a semiconductor fin above a substrate, a gate electrode over the top and adjacent to the sidewalls of a portion of the semiconductor fin. A titanium silicide material is in direct contact with each of first and second epitaxial semiconductor source or drain structures at first and second sides of the gate electrode. The titanium silicide material is conformal with and hermetically sealing a non-flat topography of each of the first and second epitaxial semiconductor source or drain structures. The titanium silicide material has a total atomic composition including 95% or greater stoichiometric TiSi2.