LITHOGRAPHIC PROCESSES FOR MAKING POLYMER-BASED ELEMENTS

    公开(公告)号:US20240184209A1

    公开(公告)日:2024-06-06

    申请号:US18060593

    申请日:2022-12-01

    CPC classification number: G03F7/201 G03F7/0007 G03F7/2006 G03F7/2014

    Abstract: The present disclosure is directed to a lithographic patterning system including a stage for supporting a substrate with a photo-definable polymer layer, a first actinic radiation source, which is configured to propagate light along a first optical axis, a first mask for patterning the propagated light from the first actinic radiation source, a second actinic radiation source, which is configured to propagate light along a second optical axis, and a second mask for patterning the propagated light from the second actinic radiation source. In a method, first and second propagated lights form an intersection in the photo-definable polymer layer, and a patterned semiconductor component is formed at the intersection.

    COMPOSITE DRY FILM RESIST FOR PHOTOLITHOGRAPHY

    公开(公告)号:US20210318612A1

    公开(公告)日:2021-10-14

    申请号:US17356536

    申请日:2021-06-24

    Abstract: The present disclosure is directed to a patterning process that includes providing a composite dry film resist on a surface, in which the composite dry film resist includes a base film, a barrier layer and a resist layer, in which the base film is disposed over the barrier layer and the barrier layer is disposed over the resist layer. In another aspect, the patterning process includes removing the base film from the barrier layer and exposing the barrier layer to form an exposure precursor, which has a first area and a second area, further exposing the first area of the exposure precursor to electromagnetic irradiation, which passes through the barrier layer and the resist layer in the exposed first area becomes water-insoluble, and removing the barrier layer and the unexposed second area to form a pattern template.

    METHOD TO ACHIEVE TILTED PATTERNING WITH A THROUGH RESIST THICKNESS

    公开(公告)号:US20200064738A1

    公开(公告)日:2020-02-27

    申请号:US16111056

    申请日:2018-08-23

    Abstract: Embodiments disclosed herein include a lithographic patterning system and methods of using such a system to form a microelectronic device. In an embodiment, the lithographic patterning system includes an actinic radiation source, a stage where a major surface of the stage is for supporting a substrate with a resist layer, and a first prism over the stage, where the first prism comprises a first face that is substantially parallel to the major surface of the stage. In an embodiment, the lithographic patterning system further comprises a second prism, where the second prism comprises a first surface that is substantially parallel to a second surface of the first prism, and where a second surface of the second prism has a reflective coating.

    FIRST LAYER INTERCONNECT FIRST ON CARRIER APPROACH FOR EMIB PATCH

    公开(公告)号:US20230027030A1

    公开(公告)日:2023-01-26

    申请号:US17958296

    申请日:2022-09-30

    Abstract: A patch structure of an integrated circuit package comprises a core having a first side facing downwards and a second side facing upwards. A first solder resist (SR) layer is formed on the first side of the core, wherein the first SR layer comprises a first layer interconnect (FLI) and has a first set of one or more microbumps thereon to bond to one or more logic die. A second solder resist (SR) layer is formed on the second side of the core, wherein the second SR layer has a second set of one or more microbumps thereon to bond with a substrate. One or more bridge dies includes a respective sets of bumps, wherein the one or more bridge dies is disposed flipped over within the core such that the respective sets of bumps face downward and connect to the first set of one or more microbumps in the FLI.

    PACKAGE SUBSTRATE INTEGRATED DEVICES
    6.
    发明申请

    公开(公告)号:US20190169020A1

    公开(公告)日:2019-06-06

    申请号:US15832223

    申请日:2017-12-05

    Abstract: A package substrate is provided which comprises: one or more first conductive contacts on a first surface; one or more second conductive contacts on a second surface opposite the first surface; a dielectric layer between the first and the second surfaces; and an embedded sensing or actuating element on the dielectric layer conductively coupled with one of the first conductive contacts, wherein the embedded sensing or actuating element comprises a fixed metal layer in the dielectric layer and a flexible metal layer suspended over the fixed metal layer by one or more metal supports on the dielectric layer. Other embodiments are also disclosed and claimed.

    FIRST LAYER INTERCONNECT FIRST ON CARRIER APPROACH FOR EMIB PATCH

    公开(公告)号:US20210343673A1

    公开(公告)日:2021-11-04

    申请号:US17366469

    申请日:2021-07-02

    Abstract: A patch structure of an integrated circuit package comprises a core having a first side facing downwards and a second side facing upwards. A first solder resist (SR) layer is formed on the first side of the core, wherein the first SR layer comprises a first layer interconnect (FLI) and has a first set of one or more microbumps thereon to bond to one or more logic die. A second solder resist (SR) layer is formed on the second side of the core, wherein the second SR layer has a second set of one or more microbumps thereon to bond with a substrate. One or more bridge dies includes a respective sets of bumps, wherein the one or more bridge dies is disposed flipped over within the core such that the respective sets of bumps face downward and connect to the first set of one or more microbumps in the FLI.

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