LITHOGRAPHIC CAVITY FORMATION TO ENABLE EMIB BUMP PITCH SCALING

    公开(公告)号:US20220223527A1

    公开(公告)日:2022-07-14

    申请号:US17712944

    申请日:2022-04-04

    Abstract: Embodiments include an electronic package with an embedded multi-interconnect bridge (EMIB) and methods of making such packages. Embodiments include a first layer, that is an organic material and a second layer disposed over the first layer. In an embodiment, a cavity is formed through the second layer to expose a first surface of the first layer. A bridge substrate is in the cavity and is supported by the first surface of the first layer. Embodiments include a first die over the second layer that is electrically coupled to a first contact on the bridge substrate, and a second die over the second layer that is electrically coupled to a second contact on the bridge substrate. In an embodiment the first die is electrically coupled to the second die by the bridge substrate.

    FIRST LAYER INTERCONNECT FIRST ON CARRIER APPROACH FOR EMIB PATCH

    公开(公告)号:US20210343673A1

    公开(公告)日:2021-11-04

    申请号:US17366469

    申请日:2021-07-02

    Abstract: A patch structure of an integrated circuit package comprises a core having a first side facing downwards and a second side facing upwards. A first solder resist (SR) layer is formed on the first side of the core, wherein the first SR layer comprises a first layer interconnect (FLI) and has a first set of one or more microbumps thereon to bond to one or more logic die. A second solder resist (SR) layer is formed on the second side of the core, wherein the second SR layer has a second set of one or more microbumps thereon to bond with a substrate. One or more bridge dies includes a respective sets of bumps, wherein the one or more bridge dies is disposed flipped over within the core such that the respective sets of bumps face downward and connect to the first set of one or more microbumps in the FLI.

    FIRST LAYER INTERCONNECT FIRST ON CARRIER APPROACH FOR EMIB PATCH

    公开(公告)号:US20200286847A1

    公开(公告)日:2020-09-10

    申请号:US16646084

    申请日:2018-01-12

    Abstract: A patch structure of an integrated circuit package comprises a core having a first side facing downwards and a second side facing upwards. Forming a first solder resist (SR) layer on the first side of the core, wherein the first SR layer comprises a first layer interconnect (FLI) and has a first set of one or more microbumps thereon to bond to one or more logic die. Forming a second solder resist (SR) layer on the second side of the core, wherein the second SR layer has a second set of one or more microbumps thereon to bond with a substrate. One or more bridge dies includes a respective sets of bumps, wherein the one or more bridge dies is disposed flipped over within the core such that the respective sets of bumps face downward and connect to the first set of one or more microbumps in the FLI.

    FIRST LAYER INTERCONNECT FIRST ON CARRIER APPROACH FOR EMIB PATCH

    公开(公告)号:US20230027030A1

    公开(公告)日:2023-01-26

    申请号:US17958296

    申请日:2022-09-30

    Abstract: A patch structure of an integrated circuit package comprises a core having a first side facing downwards and a second side facing upwards. A first solder resist (SR) layer is formed on the first side of the core, wherein the first SR layer comprises a first layer interconnect (FLI) and has a first set of one or more microbumps thereon to bond to one or more logic die. A second solder resist (SR) layer is formed on the second side of the core, wherein the second SR layer has a second set of one or more microbumps thereon to bond with a substrate. One or more bridge dies includes a respective sets of bumps, wherein the one or more bridge dies is disposed flipped over within the core such that the respective sets of bumps face downward and connect to the first set of one or more microbumps in the FLI.

    EMIB PATCH ON GLASS LAMINATE SUBSTRATE
    7.
    发明申请

    公开(公告)号:US20200303309A1

    公开(公告)日:2020-09-24

    申请号:US16356442

    申请日:2019-03-18

    Abstract: Embodiments disclosed herein include electronic packages for PoINT architectures. Particularly, embodiments include electronic packages that include reinforcement substrates to minimize warpage. In an embodiment, an electronic package comprises, a reinforcement substrate, a plurality of through substrate vias through the reinforcement substrate, a dielectric substrate over the reinforcement substrate, a cavity into the dielectric substrate, and a component in the cavity.

    LITHOGRAPHIC CAVITY FORMATION TO ENABLE EMIB BUMP PITCH SCALING

    公开(公告)号:US20190295951A1

    公开(公告)日:2019-09-26

    申请号:US15934343

    申请日:2018-03-23

    Abstract: Embodiments include an electronic package with an embedded multi-interconnect bridge (EMIB) and methods of making such packages. Embodiments include a first layer, that is an organic material and a second layer disposed over the first layer. In an embodiment, a cavity is formed through the second layer to expose a first surface of the first layer. A bridge substrate is in the cavity and is supported by the first surface of the first layer. Embodiments include a first die over the second layer that is electrically coupled to a first contact on the bridge substrate, and a second die over the second layer that is electrically coupled to a second contact on the bridge substrate. In an embodiment the first die is electrically coupled to the second die by the bridge substrate.

    LITHOGRAPHIC PROCESSES FOR MAKING POLYMER-BASED ELEMENTS

    公开(公告)号:US20240184209A1

    公开(公告)日:2024-06-06

    申请号:US18060593

    申请日:2022-12-01

    CPC classification number: G03F7/201 G03F7/0007 G03F7/2006 G03F7/2014

    Abstract: The present disclosure is directed to a lithographic patterning system including a stage for supporting a substrate with a photo-definable polymer layer, a first actinic radiation source, which is configured to propagate light along a first optical axis, a first mask for patterning the propagated light from the first actinic radiation source, a second actinic radiation source, which is configured to propagate light along a second optical axis, and a second mask for patterning the propagated light from the second actinic radiation source. In a method, first and second propagated lights form an intersection in the photo-definable polymer layer, and a patterned semiconductor component is formed at the intersection.

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