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公开(公告)号：US11500285B2
公开(公告)日：2022-11-15
申请号：US16158103
申请日：2018-10-11
Inventor： Luisa D. Bozano , Daisuke Domon , Yoshio Kawai , Keiichi Masunaga , Martha I. Sanchez , Daniel P. Sanders , Ratnam Sooriyakumaran , Linda K. Sundberg , Satoshi Watanabe
IPC: G03F7/20 , G03F7/038 , G03F7/32 , G03F7/004 , C08F220/18 , C08F220/30 , C08F220/24 , C08F212/14
Abstract: A negative-tone resist composition is provided that contains a free photoacid generator and a multifunctional polymer covalently bound to a photoacid-generating moiety, where the composition is substantially free of cross-linking agents. Multifunctional polymers useful in conjunction with the resist composition are also provided, as is a process for generating a resist image on a substrate using the present compositions and polymers.
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公开(公告)号：US20180046077A1
公开(公告)日：2018-02-15
申请号：US15235410
申请日：2016-08-12
Inventor： Takehisa Ishimaru , Satoru Narizuka , Daniel P. Sanders , Ratnam Sooriyakumaran , Hoa D. Truong , Rudy J. Wojtecki
IPC: G03F7/004 , G03F7/038 , G03F7/16 , G03F7/20 , C07C309/76 , G03F7/38 , C07C309/69 , C07C309/68 , C07C309/70 , C07F7/21 , G03F7/039 , G03F7/32
CPC classification number: G03F7/0045 , C07C309/68 , C07C309/70 , C07C309/77 , C07C317/04 , C07C317/06 , C07C317/08 , C07C317/10 , C07C317/14 , C07C317/24 , C07C317/26 , C07C317/32 , C07C2103/74 , C07C2603/74 , C07F7/21 , G03F7/0046 , G03F7/0397 , G03F7/0755 , G03F7/322 , G03F7/325 , G03F7/38
Abstract: Non-ionic photo-acid generating (PAG) compounds were prepared that contain an aryl ketone group having a perfluorinated substituent alpha to the ketone carbonyl. The non-polymeric PAGs release a sulfonic acid when exposed to high energy radiation such as deep UV or extreme UV light. The photo-generated sulfonic acid has a low diffusion rate in an exposed resist layer subjected to a post-exposure bake (PEB) at 100° C. to 150° C., resulting in formation of good line patterns after development. At higher temperatures, the PAGs can also undergo a thermal reaction to form a sulfonic acid. The perfluorinated substituent provides improved thermal stability and hydrolytic/nucleophilic stability.
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公开(公告)号：US09337033B1
公开(公告)日：2016-05-10
申请号：US14945456
申请日：2015-11-19
Applicant: International Business Machines Corporation
Inventor： Martin Glodde , Wu-Song Huang , Hiroyuki Miyazoe , Ratnam Sooriyakumaran , Hsinyu Tsai
IPC: H01L21/033 , H01L21/311 , H01L21/02 , G03F7/09 , G03F7/075
CPC classification number: H01L21/0332 , C23C18/00 , G03F7/0752 , G03F7/0757 , G03F7/094 , H01L21/0337 , H01L21/31144
Abstract: A process for patterning a hard mask material with line-space patterns below a 30 nm pitch and a 15 nm critical dimension by employing a spin-on titanium-silicon (TiSi) polymer or oligomer as a tone inversion material is provided. The spin-on TiSi material is spin-coated over a patterned OPL that includes a first pattern generated from a DSA based process. The spin-on TiSi material fill trenches within the patterned OPL to form a tone inverted pattern by removing the patterned OPL selective to the spin-on TiSi material. The inverted pattern is a complementary pattern to the first pattern, and is transferred into the underlying hard mask material by an anisotropic etch.
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公开(公告)号：US20150021262A1
公开(公告)日：2015-01-22
申请号：US14504224
申请日：2014-10-01
Applicant: International Business Machines Corporation
Inventor： Jacquana T. Diep , Young-Hye Na , Ratnam Sooriyakumaran , Ankit Vora
CPC classification number: B01D71/76 , B01D61/08 , B01D67/0006 , B01D69/125 , B01D69/141 , B01D71/56 , B01D71/70 , B01D71/82 , B01D2323/30 , B01D2323/40 , B05D5/00 , C08G77/045 , C08G77/26 , C08G77/455 , C08J9/36 , C08L81/06 , C08L83/10
Abstract: A polymeric membrane on a support, wherein the polymeric membrane includes a crosslinked polymer covalently bound to a molecular cage compound. An interfacial polymerization method for making the polymeric membrane is also disclosed.
Abstract translation: 载体上的聚合物膜，其中聚合物膜包括与分子笼化合物共价结合的交联聚合物。 还公开了制备聚合物膜的界面聚合方法。
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5.发明申请公开(公告)号：US20140227641A1
公开(公告)日：2014-08-14
申请号：US13767114
申请日：2013-02-14
Inventor： Martin Glodde , Wu-Song Huang , Javier Perez , Ratnam Sooriyakumaran , Takeshi Kinsho , Tsutomu Ogihara , Seiichiro Tachibana , Takafumi Ueda
CPC classification number: G03F7/0757 , G03F7/0045 , G03F7/0751 , G03F7/0755 , G03F7/091 , G03F7/325
Abstract: Embodiments include a silicon-containing antireflective material including a silicon-containing base polymer, a non-polymeric silsesquioxane material, and a photoacid generator. The silicon-containing base polymer may contain chromophore moieties, transparent moieties, and reactive sites on an SiOx background, where x ranges from approximately 1 to approximately 2. Exemplary non-polymeric silsesquioxane materials include polyhedral oligomeric silsesquioxanes having acid labile side groups linked to hydrophilic groups Exemplary acid labile side groups may include tertiary alkyl carbonates, tertiary alkyl esters, tertiary alkyl ethers, acetals and ketals, Exemplary hydrophilic groups may include phenols, alcohols, carboxylic acids, amides, and sulfonamides. Embodiments further include lithographic structures including an organic anti-reflective layer, the above-described silicon-containing anti-reflective layer above the organic anti-reflective layer, and a photoresist layer above the above-described silicon-containing anti-reflective layer. Embodiments further include a method of forming a lithographic structure utilizing the above-described silicon-containing anti-reflective layer.
Abstract translation: 实施方案包括含硅的抗反射材料，其包含含硅基聚合物，非聚合倍半硅氧烷材料和光酸产生剂。 含硅基聚合物可以在SiOx背景上含有发色团部分，透明部分和反应性位点，其中x为约1至约2.示例性非聚合倍半硅氧烷材料包括具有与亲水性连接的酸不稳定侧基的多面体低聚倍半硅氧烷 示例性的酸不稳定侧基可以包括碳酸叔烷基酯，叔烷基酯，叔烷基醚，缩醛和缩酮。示例性亲水基团可以包括酚，醇，羧酸，酰胺和磺酰胺。 实施例还包括包括有机抗反射层，上述有机抗反射层上的含硅抗反射层和在上述含硅抗反射层上方的光致抗蚀剂层的光刻结构。 实施例还包括利用上述含硅抗反射层形成光刻结构的方法。
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Patent Agency Ranking
公开(公告)号：US10174229B2
公开(公告)日：2019-01-08
申请号：US15817843
申请日：2017-11-20
Applicant: International Business Machines Corporation
Inventor： Robert D. Allen , Jeffrey Gelorme , Li-Wen Hung , Ratnam Sooriyakumaran , Linda K. Sundberg
IPC: C09J129/10 , H01L21/50 , C09J125/08 , H01L21/683 , C08F212/08 , C09J133/06
Abstract: An adhesive bonding method that includes bonding a handling wafer to a front side surface of a device wafer with an adhesive comprising N-substituted maleimide copolymers. The device wafer may then be thinned from the backside surface of the device wafer while the device wafer is adhesively engaged to the handling wafer. The adhesive can then be removed by laser debonding, wherein the device wafer is separated from the handling wafer.
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公开(公告)号：US09671694B1
公开(公告)日：2017-06-06
申请号：US15282238
申请日：2016-09-30
Inventor： Martin Glodde , Ratnam Sooriyakumaran , Seiichiro Tachibana , Hoa D. Truong
IPC: G03F7/11 , G03F7/09 , C09D125/18 , C09D133/14 , G03F7/20 , G03F7/16 , H01L21/308
CPC classification number: G03F7/094 , C09D125/18 , C09D133/14 , G03F7/0752 , G03F7/091 , G03F7/162 , G03F7/168 , G03F7/2004 , G03F7/2006 , G03F7/2008 , G03F7/2016 , H01L21/0332 , H01L21/3081 , H01L21/3083
Abstract: A layered structure includes a substrate; an underlayer including a reversibly crosslinked polymer and/or oligomer interconnected by ester functionalities; a silicon-containing mask overlaying the underlayer; and a photoresist overlaying the silicon-containing hardmask layer. Also described are multilayer lithographic processes and processes of forming the underlayer, which generally includes coating an underlayer composition onto a surface of the substrate at a thickness effective to provide a planar upper surface, wherein the underlayer composition includes a polymer including terminal alcohol groups, a multifunctional anhydride, and a solvent. The underlayer composition is heated to a temperature to effect a crosslinking reaction between the multifunctional anhydride and the terminal alcohol groups to form the ester functionalities, which can be selectively removed (reversibly crosslinked) using a wet etchant.
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公开(公告)号：US20160070169A1
公开(公告)日：2016-03-10
申请号：US14479378
申请日：2014-09-08
Inventor： Luisa D. Bozano , Daisuke Domon , Yoshio Kawai , Keiichi Masunaga , Martha I. Sanchez , Daniel P. Sanders , Ratnam Sooriyakumaran , Linda K. Sundberg , Satoshi Watanabe
CPC classification number: G03F7/0045 , C08F220/18 , C08F220/30 , G03F7/0046 , G03F7/0382 , G03F7/20 , G03F7/322 , C08F212/14 , C08F2220/382
Abstract: A negative-tone resist composition is provided that contains a free photoacid generator and a multifunctional polymer covalently bound to a photoacid-generating moiety, where the composition is substantially free of cross-linking agents. Multifunctional polymers useful in conjunction with the resist composition are also provided, as is a process for generating a resist image on a substrate using the present compositions and polymers.
Abstract translation: 提供了一种负色调抗蚀剂组合物，其包含游离的光致酸产生剂和与产生光致酸的部分共价结合的多官能聚合物，其中组合物基本上不含交联剂。 还提供了与抗蚀剂组合物结合使用的多官能聚合物，以及使用本发明组合物和聚合物在基材上产生抗蚀剂图像的方法。
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9.发明授权Silicon-containing antireflective coatings including non-polymeric silsesquioxanes 有权含硅的抗反射涂层，包括非聚合倍半硅氧烷公开(公告)号：US08999625B2
公开(公告)日：2015-04-07
申请号：US13767114
申请日：2013-02-14
Inventor： Martin Glodde , Wu-Song Huang , Javier Perez , Ratnam Sooriyakumaran , Takeshi Kinsho , Tsutomu Ogihara , Seiichiro Tachibana , Takafumi Ueda
CPC classification number: G03F7/0757 , G03F7/0045 , G03F7/0751 , G03F7/0755 , G03F7/091 , G03F7/325
Abstract: Embodiments include a silicon-containing antireflective material including a silicon-containing base polymer, a non-polymeric silsesquioxane material, and a photoacid generator. The silicon-containing base polymer may contain chromophore moieties, transparent moieties, and reactive sites on an SiOx background, where x ranges from approximately 1 to approximately 2. Exemplary non-polymeric silsesquioxane materials include polyhedral oligomeric silsesquioxanes having acid labile side groups linked to hydrophilic groups Exemplary acid labile side groups may include tertiary alkyl carbonates, tertiary alkyl esters, tertiary alkyl ethers, acetals and ketals, Exemplary hydrophilic groups may include phenols, alcohols, carboxylic acids, amides, and sulfonamides. Embodiments further include lithographic structures including an organic anti-reflective layer, the above-described silicon-containing anti-reflective layer above the organic anti-reflective layer, and a photoresist layer above the above-described silicon-containing anti-reflective layer. Embodiments further include a method of forming a lithographic structure utilizing the above-described silicon-containing anti-reflective layer.
Abstract translation: 实施方案包括含硅的抗反射材料，其包含含硅基聚合物，非聚合倍半硅氧烷材料和光酸产生剂。 含硅基聚合物可以在SiOx背景上含有发色团部分，透明部分和反应性位点，其中x为约1至约2.示例性非聚合倍半硅氧烷材料包括具有与亲水性连接的酸不稳定侧基的多面体低聚倍半硅氧烷 示例性的酸不稳定侧基可以包括碳酸叔烷基酯，叔烷基酯，叔烷基醚，缩醛和缩酮。示例性亲水基团可以包括酚，醇，羧酸，酰胺和磺酰胺。 实施例还包括包括有机抗反射层，上述有机抗反射层上的含硅抗反射层和在上述含硅抗反射层上方的光致抗蚀剂层的光刻结构。 实施例还包括利用上述含硅抗反射层形成光刻结构的方法。
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公开(公告)号：US08981031B2
公开(公告)日：2015-03-17
申请号：US13742526
申请日：2013-01-16
Applicant: International Business Machines Corporation
Inventor： Robert D. Miller , Alshakim Nelson , Jitendra S. Rathore , Ratnam Sooriyakumaran
IPC: C08G77/12 , H01L23/532 , C07F7/21 , C08L83/14 , G03F7/075 , G03F7/40 , H01L21/02 , H01L21/31 , H01L21/768 , C08G77/50 , G03F7/004
CPC classification number: H01L23/5329 , C07F7/21 , C08G77/50 , C08L83/14 , G03F7/0045 , G03F7/0755 , G03F7/0757 , G03F7/40 , H01L21/02126 , H01L21/02137 , H01L21/02203 , H01L21/02282 , H01L21/31 , H01L21/76802 , H01L21/76808 , H01L21/76814 , H01L2221/1031 , H01L2924/0002 , Y10T428/31663 , H01L2924/00
Abstract: Silsesquioxane polymers that cure to porous silsesquioxane polymers, silsesquioxane polymers that cure to porous silsesquioxane polymers in negative tone photo-patternable dielectric formulations, methods of forming structures using negative tone photo-patternable dielectric formulations containing silsesquioxane polymers that cure to porous silsesquioxane polymers, structures containing porous silsesquioxane polymers and monomers and method of preparing monomers for silsesquioxane polymers that cure to porous silsesquioxane polymers.
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