公开(公告)号：US09876084B2

公开(公告)日：2018-01-23

申请号：US15084144

申请日：2016-03-29

Applicant: International Business Machines Corporation

Inventor： Mohit Bajaj ,  Suresh Gundapaneni ,  Aniruddha Konar ,  Narasimha R. Mavilla ,  Kota V. R. M. Murali ,  Edward J. Nowak

IPC: H01L29/417 ,  H01L29/66 ,  H01L29/267 ,  H01L29/78 ,  H01L21/02 ,  H01L29/786 ,  H01L29/772 ,  H01L29/739 ,  H01L29/06 ,  H01L29/08 ,  H01L29/24 ,  H01L21/3115 ,  H01L21/8232 ,  H01L21/8234

CPC classification number: H01L29/41725 ,  H01L21/02414 ,  H01L21/02483 ,  H01L21/02565 ,  H01L21/02581 ,  H01L21/3115 ,  H01L21/8232 ,  H01L21/823418 ,  H01L29/0653 ,  H01L29/083 ,  H01L29/0834 ,  H01L29/0847 ,  H01L29/161 ,  H01L29/205 ,  H01L29/24 ,  H01L29/267 ,  H01L29/66795 ,  H01L29/66977 ,  H01L29/7391 ,  H01L29/772 ,  H01L29/78 ,  H01L29/785 ,  H01L29/78681 ,  H01L29/7869 ,  H01L29/78693

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a symmetric tunnel field effect transistor and methods of manufacture. The structure includes a gate structure including a source region and a drain region both of which comprise a doped VO2 region.

公开(公告)号：US20180053828A1

公开(公告)日：2018-02-22

申请号：US15794526

申请日：2017-10-26

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Mohit BAJAJ ,  Suresh GUNDAPANENI ,  Aniruddha KONAR ,  Narasimha R. Mavilla ,  Kota V.R.M. MURALI ,  Edward J. NOWAK

IPC: H01L29/417 ,  H01L29/786 ,  H01L21/02 ,  H01L29/78 ,  H01L29/772 ,  H01L29/739 ,  H01L29/66 ,  H01L29/267 ,  H01L29/24 ,  H01L29/08 ,  H01L29/06 ,  H01L21/8234 ,  H01L21/8232 ,  H01L21/3115

CPC classification number: H01L29/41725 ,  H01L21/02414 ,  H01L21/02483 ,  H01L21/02565 ,  H01L21/02581 ,  H01L21/3115 ,  H01L21/8232 ,  H01L21/823418 ,  H01L29/0653 ,  H01L29/083 ,  H01L29/0834 ,  H01L29/0847 ,  H01L29/161 ,  H01L29/205 ,  H01L29/24 ,  H01L29/267 ,  H01L29/66795 ,  H01L29/66977 ,  H01L29/7391 ,  H01L29/772 ,  H01L29/78 ,  H01L29/785 ,  H01L29/78681 ,  H01L29/7869 ,  H01L29/78693

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a symmetric tunnel field effect transistor and methods of manufacture. The structure includes a gate structure including a source region and a drain region both of which comprise a doped VO2 region.

公开(公告)号：US20170194467A1

公开(公告)日：2017-07-06

申请号：US15404955

申请日：2017-01-12

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Mohit BAJAJ ,  Suresh GUNDAPANENI ,  Aniruddha KONAR ,  Narasimha R. Mavilla ,  Kota V.R.M. MURALI ,  Edward J. NOWAK

IPC: H01L29/66 ,  H01L29/205 ,  H01L29/161 ,  H01L29/08 ,  H01L29/24

CPC classification number: H01L29/41725 ,  H01L21/02414 ,  H01L21/02483 ,  H01L21/02565 ,  H01L21/02581 ,  H01L21/3115 ,  H01L21/8232 ,  H01L21/823418 ,  H01L29/0653 ,  H01L29/083 ,  H01L29/0834 ,  H01L29/0847 ,  H01L29/161 ,  H01L29/205 ,  H01L29/24 ,  H01L29/267 ,  H01L29/66795 ,  H01L29/66977 ,  H01L29/7391 ,  H01L29/772 ,  H01L29/78 ,  H01L29/785 ,  H01L29/78681 ,  H01L29/7869 ,  H01L29/78693

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a symmetric tunnel field effect transistor and methods of manufacture. The structure includes a gate structure including a source region and a drain region both of which comprise a doped VO2 region.

公开(公告)号：US09613867B2

公开(公告)日：2017-04-04

申请号：US15084137

申请日：2016-03-29

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Mohit Bajaj ,  Suresh Gundapaneni ,  Aniruddha Konar ,  Narasimha R. Mavilla ,  Kota V. R. M. Murali ,  Edward J. Nowak

IPC: H01L21/8234 ,  H01L21/3115 ,  H01L29/66 ,  H01L21/02 ,  H01L21/8232 ,  H01L29/786

CPC classification number: H01L29/41725 ,  H01L21/02414 ,  H01L21/02483 ,  H01L21/02565 ,  H01L21/02581 ,  H01L21/3115 ,  H01L21/8232 ,  H01L21/823418 ,  H01L29/0653 ,  H01L29/083 ,  H01L29/0834 ,  H01L29/0847 ,  H01L29/161 ,  H01L29/205 ,  H01L29/24 ,  H01L29/267 ,  H01L29/66795 ,  H01L29/66977 ,  H01L29/7391 ,  H01L29/772 ,  H01L29/78 ,  H01L29/785 ,  H01L29/78681 ,  H01L29/7869 ,  H01L29/78693

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a symmetric tunnel field effect transistor and methods of manufacture. The structure includes a gate structure including a source region and a drain region both of which comprise a doped VO2 region.

公开(公告)号：US10164027B2

公开(公告)日：2018-12-25

申请号：US15794526

申请日：2017-10-26

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Mohit Bajaj ,  Suresh Gundapaneni ,  Aniruddha Konar ,  Narasimha R. Mavilla ,  Kota V. R. M. Murali ,  Edward J. Nowak

IPC: H01L29/417 ,  H01L29/66 ,  H01L29/267 ,  H01L29/78 ,  H01L21/02 ,  H01L29/786 ,  H01L29/772 ,  H01L29/739 ,  H01L29/06 ,  H01L29/08 ,  H01L29/24 ,  H01L21/3115 ,  H01L21/8232 ,  H01L21/8234 ,  H01L29/161 ,  H01L29/205

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a symmetric tunnel field effect transistor and methods of manufacture. The structure includes a gate structure including a source region and a drain region both of which comprise a doped VO2 region.

公开(公告)号：US10163716B2

公开(公告)日：2018-12-25

申请号：US15793416

申请日：2017-10-25

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Mohit Bajaj ,  Suresh Gundapaneni ,  Aniruddha Konar ,  Narasimha R. Mavilla ,  Kota V. R. M. Murali ,  Edward J. Nowak

IPC: H01L21/8234 ,  H01L29/66 ,  H01L29/267 ,  H01L29/78 ,  H01L21/02 ,  H01L29/786 ,  H01L29/417 ,  H01L29/772 ,  H01L29/739 ,  H01L29/06 ,  H01L29/08 ,  H01L29/24 ,  H01L21/3115 ,  H01L21/8232 ,  H01L29/161 ,  H01L29/205

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a symmetric tunnel field effect transistor and methods of manufacture. The structure includes a gate structure including a source region and a drain region both of which comprise a doped VO2 region.

公开(公告)号：US09911598B2

公开(公告)日：2018-03-06

申请号：US15404955

申请日：2017-01-12

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Mohit Bajaj ,  Suresh Gundapaneni ,  Aniruddha Konar ,  Narasimha R. Mavilla ,  Kota V. R. M. Murali ,  Edward J. Nowak

IPC: H01L21/02 ,  H01L29/66 ,  H01L29/08 ,  H01L29/24 ,  H01L29/161 ,  H01L29/205 ,  H01L29/78 ,  H01L29/772

CPC classification number: H01L29/41725 ,  H01L21/02414 ,  H01L21/02483 ,  H01L21/02565 ,  H01L21/02581 ,  H01L21/3115 ,  H01L21/8232 ,  H01L21/823418 ,  H01L29/0653 ,  H01L29/083 ,  H01L29/0834 ,  H01L29/0847 ,  H01L29/161 ,  H01L29/205 ,  H01L29/24 ,  H01L29/267 ,  H01L29/66795 ,  H01L29/66977 ,  H01L29/7391 ,  H01L29/772 ,  H01L29/78 ,  H01L29/785 ,  H01L29/78681 ,  H01L29/7869 ,  H01L29/78693

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a symmetric tunnel field effect transistor and methods of manufacture. The structure includes a gate structure including a source region and a drain region both of which comprise a doped VO2 region.

公开(公告)号：US20180130655A1

公开(公告)日：2018-05-10

申请号：US15793416

申请日：2017-10-25

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Mohit BAJAJ ,  Suresh GUNDAPANENI ,  Aniruddha KONAR ,  Narasimha R. Mavilla ,  Kota V.R.M. MURALI ,  Edward J. NOWAK

IPC: H01L21/02 ,  H01L29/78 ,  H01L29/772 ,  H01L29/66 ,  H01L29/24 ,  H01L29/161 ,  H01L29/08 ,  H01L29/205

CPC classification number: H01L29/41725 ,  H01L21/02414 ,  H01L21/02483 ,  H01L21/02565 ,  H01L21/02581 ,  H01L21/3115 ,  H01L21/8232 ,  H01L21/823418 ,  H01L29/0653 ,  H01L29/083 ,  H01L29/0834 ,  H01L29/0847 ,  H01L29/161 ,  H01L29/205 ,  H01L29/24 ,  H01L29/267 ,  H01L29/66795 ,  H01L29/66977 ,  H01L29/7391 ,  H01L29/772 ,  H01L29/78 ,  H01L29/785 ,  H01L29/78681 ,  H01L29/7869 ,  H01L29/78693

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a symmetric tunnel field effect transistor and methods of manufacture. The structure includes a gate structure including a source region and a drain region both of which comprise a doped VO2 region.

公开(公告)号：US20170062594A1

公开(公告)日：2017-03-02

申请号：US15084144

申请日：2016-03-29

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Mohit BAJAJ ,  Suresh GUNDAPANENI ,  Aniruddha KONAR ,  Narasimha R. Mavilla ,  Kota V.R.M. MURALI ,  Edward J. NOWAK

IPC: H01L29/66

CPC classification number: H01L29/41725 ,  H01L21/02414 ,  H01L21/02483 ,  H01L21/02565 ,  H01L21/02581 ,  H01L21/3115 ,  H01L21/8232 ,  H01L21/823418 ,  H01L29/0653 ,  H01L29/083 ,  H01L29/0834 ,  H01L29/0847 ,  H01L29/161 ,  H01L29/205 ,  H01L29/24 ,  H01L29/267 ,  H01L29/66795 ,  H01L29/66977 ,  H01L29/7391 ,  H01L29/772 ,  H01L29/78 ,  H01L29/785 ,  H01L29/78681 ,  H01L29/7869 ,  H01L29/78693

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a symmetric tunnel field effect transistor and methods of manufacture. The structure includes a gate structure including a source region and a drain region both of which comprise a doped VO2 region.

Abstract translation: 本公开涉及半导体结构，更具体地，涉及对称隧道场效应晶体管及其制造方法。 该结构包括包括源极区和漏极区的栅结构，二者都包括掺杂的VO2区。

公开(公告)号：US20170062234A1

公开(公告)日：2017-03-02

申请号：US15084137

申请日：2016-03-29

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Mohit BAJAJ ,  Suresh GUNDAPANENI ,  Aniruddha KONAR ,  Narasimha R. Mavilla ,  Kota V.R.M. MURALI ,  Edward J. NOWAK

IPC: H01L21/3115 ,  H01L21/02 ,  H01L29/66

CPC classification number: H01L29/41725 ,  H01L21/02414 ,  H01L21/02483 ,  H01L21/02565 ,  H01L21/02581 ,  H01L21/3115 ,  H01L21/8232 ,  H01L21/823418 ,  H01L29/0653 ,  H01L29/083 ,  H01L29/0834 ,  H01L29/0847 ,  H01L29/161 ,  H01L29/205 ,  H01L29/24 ,  H01L29/267 ,  H01L29/66795 ,  H01L29/66977 ,  H01L29/7391 ,  H01L29/772 ,  H01L29/78 ,  H01L29/785 ,  H01L29/78681 ,  H01L29/7869 ,  H01L29/78693

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a symmetric tunnel field effect transistor and methods of manufacture. The structure includes a gate structure including a source region and a drain region both of which comprise a doped VO2 region.