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公开(公告)号：US11443982B2
公开(公告)日：2022-09-13
申请号：US16183785
申请日：2018-11-08
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Andrew Greene , Ruilong Xie , Laertis Economikos , Veeraraghavan S. Basker , Chanro Park , Hui Zang
IPC: H01L21/768 , H01L29/66 , H01L21/8234 , H01L29/49 , H01L29/51 , H01L29/78
Abstract: A semiconductor device includes one or more fins extending from a substrate, the one or more fins having source/drain epitaxial grown material (S/D epitaxy) thereon that merges one or more fins, a gate formed over the one or more fins, the gate including high k metal gate disposed between gate spacers and a metal liner over the S/D epitaxy and sides of the gate spacers. The gate includes a self-aligned contact cap over the HKMG and the metal liner.
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公开(公告)号：US20200152509A1
公开(公告)日：2020-05-14
申请号：US16183785
申请日：2018-11-08
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Andrew Greene , Ruilong Xie , Laertis Economikos , Veeraraghavan S. Basker , Chanro Park , Hui Zang
IPC: H01L21/768 , H01L29/66 , H01L29/78 , H01L29/49 , H01L29/51 , H01L21/8234
Abstract: A semiconductor device includes one or more fins extending from a substrate, the one or more fins having source/drain epitaxial grown material (S/D epitaxy) thereon that merges one or more fins, a gate formed over the one or more fins, the gate including high k metal gate disposed between gate spacers and a metal liner over the S/D epitaxy and sides of the gate spacers. The gate includes a self-aligned contact cap over the HKMG and the metal liner.
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公开(公告)号：US20170148647A1
公开(公告)日：2017-05-25
申请号：US15424297
申请日：2017-02-03
Inventor： John H. Zhang , Laertis Economikos , Adam Ticknor , Wei-Tsu Tseng
CPC classification number: H01L21/67017 , B01D15/362 , B01D15/363 , B01D24/002 , B01D24/008 , B01D53/82 , B01D2201/287 , B01D2221/14 , B01D2253/206 , B01D2258/0216 , H01L21/6704 , H01L21/67051
Abstract: The present disclosure is directed to fluid filtering systems and methods for use during semiconductor processing. One or more embodiments are directed to fluid filtering systems and methods for filtering ions and particles from a fluid as the fluid is being provided to a semiconductor wafer processing tool, such as to a semiconductor wafer cleaning tool.
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4.发明授权Cleaning composition and process for cleaning semiconductor devices and/or tooling during manufacturing thereof 有权用于清洁半导体器件的清洁组合物和工艺和/或其制造过程中的工具公开(公告)号：US09058976B2
公开(公告)日：2015-06-16
申请号：US13669627
申请日：2012-11-06
Applicant: International Business Machines Corporation
Inventor： Vishal Chhabra , Laertis Economikos , John A. Fitzsimmons , James Hannah , Mahmoud Khojasteh , Jennifer Muncy
CPC classification number: H01L21/02057 , C11D3/042 , C11D3/2079 , C11D3/2086 , C11D7/08 , C11D7/265 , C11D7/267 , C11D11/0047
Abstract: Cleaning solutions and processes for cleaning semiconductor devices or semiconductor tooling during manufacture thereof generally include contacting the semiconductor devices or semiconductor tooling with an acidic aqueous cleaning solution free of a fluorine containing compound, the acidic aqueous cleaning solution including at least one antioxidant and at least one non-oxidizing acid.
Abstract translation: 用于在制造过程中清洁半导体器件或半导体工具的清洁溶液和工艺通常包括使半导体器件或半导体工具与不含氟化合物的酸性含水清洁溶液接触，所述酸性含水清洁溶液包含至少一种抗氧化剂和至少一种抗氧化剂 非氧化性酸。
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公开(公告)号：US08748252B1
公开(公告)日：2014-06-10
申请号：US13684869
申请日：2012-11-26
Applicant: International Business Machines Corporation
Inventor： Effendi Leobandung , William Cote , Laertis Economikos , Young-Hee Kim , Dae-Gyu Park , Theodorus Eduardus Standaert , Kenneth Jay Stein , YS Suh , Min Yang
IPC: H01L21/8234 , H01L29/66
CPC classification number: H01L29/66545 , H01L21/28008 , H01L21/823828 , H01L21/823864 , H01L29/49 , H01L29/51 , H01L29/78
Abstract: Methods of fabricating replacement metal gate transistors using bi-layer a hardmask are disclosed. By utilizing a bi-layer hardmask comprised of a first layer of nitride, followed by a second layer of oxide, the topography issues caused by transition regions of gates are mitigated, which simplifies downstream processing steps and improves yield.
Abstract translation: 公开了使用双层硬掩模制造替代金属栅极晶体管的方法。 通过利用由第一层氮化物构成的双层硬掩模，随后是第二层氧化物，减轻了由栅极的过渡区域引起的形貌问题，这简化了下游处理步骤并提高了产量。
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Patent Agency Ranking
6.发明申请METHOD AND SYSTEM TO PREDICT LITHOGRAPHY FOCUS ERROR USING SIMULATED OR MEASURED TOPOGRAPHY 审中-公开使用模拟或测量的地形来预测地震聚焦误差的方法和系统公开(公告)号：US20140075396A1
公开(公告)日：2014-03-13
申请号：US14080933
申请日：2013-11-15
Applicant: International Business Machines Corporation
Inventor： Choongyeun Cho , Lawrence A. Clevenger , Laertis Economikos , Bernhard R. Liegl , Kevin S. Petrarca , Roger Allan Quon , Brian Christopher Sapp
IPC: G06F17/50
CPC classification number: G03F7/7065 , G03F7/70066 , G03F7/705 , G03F7/70525 , G03F7/70641 , G03F9/7026 , G06F17/5009 , G06F17/5081
Abstract: A method and system to predict lithography focus error using chip topography data is disclosed. The chip topography data may be measured or simulated topography data. A plane is best fitted to the topography data, and residuals are computed. The residuals are then used to make a prediction regarding the focus error. The density ratio of metal to dielectric may also be used as a factor in determining the predicted focus error.
Abstract translation: 公开了使用芯片形貌数据来预测光刻聚焦误差的方法和系统。 可以测量或模拟地形数据的芯片地形数据。 平面最适合地形数据，并计算残差。 然后，残差用于对聚焦误差进行预测。 金属与电介质的密度比也可用作确定预测的聚焦误差的因素。
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公开(公告)号：US20220375788A1
公开(公告)日：2022-11-24
申请号：US17817365
申请日：2022-08-04
Applicant: International Business Machines Corporation
Inventor： Andrew Greene , Ruilong Xie , Laertis Economikos , Veeraraghavan S. Basker , Chanro Park , Hui Zang
IPC: H01L21/768 , H01L29/66 , H01L21/8234 , H01L29/49 , H01L29/51 , H01L29/78
Abstract: A semiconductor device includes one or more fins extending from a substrate, the one or more fins having source/drain epitaxial grown material (S/D epitaxy) thereon that merges one or more fins, a gate formed over the one or more fins, the gate including high k metal gate disposed between gate spacers and a metal liner over the S/D epitaxy and sides of the gate spacers. The gate includes a self-aligned contact cap over the HKMG and the metal liner.
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公开(公告)号：US10109505B2
公开(公告)日：2018-10-23
申请号：US15424297
申请日：2017-02-03
Inventor： John H. Zhang , Laertis Economikos , Adam Ticknor , Wei-Tsu Tseng
Abstract: The present disclosure is directed to fluid filtering systems and methods for use during semiconductor processing. One or more embodiments are directed to fluid filtering systems and methods for filtering ions and particles from a fluid as the fluid is being provided to a semiconductor wafer processing tool, such as to a semiconductor wafer cleaning tool.
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公开(公告)号：US20150111373A1
公开(公告)日：2015-04-23
申请号：US14057357
申请日：2013-10-18
Inventor： William J. Cote , Laertis Economikos , Shom Ponoth , Theodorus E. Standaert , Charan V. Surisetty , Ruilong Xie
IPC: H01L21/8238 , H01L21/8234
CPC classification number: H01L21/823828 , H01L21/823437 , H01L21/823468 , H01L21/823864
Abstract: A method of forming transistors is provided. The method includes forming a plurality of transistor structures to have a plurality of dummy gates on a substrate. Each dummy gate is surrounded by sidewall spacers of a height, which is less than the dummy gate and is different for different transistor structures resulting in divots of different depths above the sidewall spacers. The method then deposits a conformal dielectric layer on top of the dummy gates and inside the divots of the plurality of transistor structures with the conformal dielectric layer having a thickness of at least half of a width of the divots, removes only a portion of the conformal dielectric layer that is on top of the dummy gates to expose the dummy gates; and replaces the dummy gates with a plurality of high-k metal gates.
Abstract translation: 提供一种形成晶体管的方法。 该方法包括形成多个晶体管结构以在衬底上具有多个虚拟栅极。 每个虚拟栅极被高度的侧壁间隔物包围，该间隙小于虚拟栅极，并且对于不同的晶体管结构是不同的，导致在侧壁间隔物上方具有不同深度的裂缝。 该方法然后在保持电介质层的厚度至少为纹理宽度的一半之上的情况下，在虚拟栅极的顶部和多个晶体管结构的纹间之内沉积保形介电层，仅去除一部分保形 位于伪栅极顶部以暴露伪栅极的介电层; 并且用多个高k金属栅极代替伪栅极。
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10.发明申请CLEANING COMPOSITION AND PROCESS FOR CLEANING SEMICONDUCTOR DEVICES AND/OR TOOLING DURING MANUFACTURING THEREOF 有权清洁组合物和清洁半导体器件和/或其制造过程中的清洁公开(公告)号：US20140128307A1
公开(公告)日：2014-05-08
申请号：US13669627
申请日：2012-11-06
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Vishal Chhabra , Laertis Economikos , John A. Fitzsimmons , James Hannah , Mahmoud Khojasteh , Jennifer Muncy
CPC classification number: H01L21/02057 , C11D3/042 , C11D3/2079 , C11D3/2086 , C11D7/08 , C11D7/265 , C11D7/267 , C11D11/0047
Abstract: Cleaning solutions and processes for cleaning semiconductor devices or semiconductor tooling during manufacture thereof generally include contacting the semiconductor devices or semiconductor tooling with an acidic aqueous cleaning solution free of a fluorine containing compound, the acidic aqueous cleaning solution including at least one antioxidant and at least one non-oxidizing acid.
Abstract translation: 用于在制造过程中清洁半导体器件或半导体工具的清洁溶液和工艺通常包括使半导体器件或半导体工具与不含氟化合物的酸性含水清洁溶液接触，所述酸性含水清洁溶液包含至少一种抗氧化剂和至少一种抗氧化剂 非氧化性酸。
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