ACIDIFIED CONDUCTIVE WATER FOR DEVELOPER RESIDUE REMOVAL
    2.
    发明申请
    ACIDIFIED CONDUCTIVE WATER FOR DEVELOPER RESIDUE REMOVAL 审中-公开
    用于开发者残留去除的酸化导电水

    公开(公告)号:US20160041471A1

    公开(公告)日:2016-02-11

    申请号:US14453882

    申请日:2014-08-07

    CPC classification number: G03F7/405

    Abstract: The present invention relates generally to semiconductor fabrication lithography and, more particularly, to a method and composition for reducing post-development defects and residues that may remain on a photoresist after development of the photoresist without causing substantial damage to the photoresist. The method may include rinsing the photoresist and the semiconductor device with ozonated acidified conductive water composed of a combination of ozone and a gaseous acid dissolved in deionized water.

    Abstract translation: 本发明一般涉及半导体制造光刻术,更具体地说,涉及一种减少显影后缺陷的残留物和残余物的方法和组合物,其可以在光致抗蚀剂显影之后保留在光致抗蚀剂上而不会对光致抗蚀剂造成实质的损害。 该方法可以包括用由臭氧和溶解在去离子水中的气态的组合组成的臭氧化的酸化导电水冲洗光致抗蚀剂和半导体器件。

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