Abstract:
Cleaning solutions and processes for cleaning semiconductor devices or semiconductor tooling during manufacture thereof generally include contacting the semiconductor devices or semiconductor tooling with an acidic aqueous cleaning solution free of a fluorine containing compound, the acidic aqueous cleaning solution including at least one antioxidant and at least one non-oxidizing acid.
Abstract:
The present invention relates generally to semiconductor fabrication lithography and, more particularly, to a method and composition for reducing post-development defects and residues that may remain on a photoresist after development of the photoresist without causing substantial damage to the photoresist. The method may include rinsing the photoresist and the semiconductor device with ozonated acidified conductive water composed of a combination of ozone and a gaseous acid dissolved in deionized water.
Abstract:
Cleaning solutions and processes for cleaning semiconductor devices or semiconductor tooling during manufacture thereof generally include contacting the semiconductor devices or semiconductor tooling with an acidic aqueous cleaning solution free of a fluorine containing compound, the acidic aqueous cleaning solution including at least one antioxidant and at least one non-oxidizing acid.
Abstract:
Cleaning solutions and processes for cleaning semiconductor devices or semiconductor tooling during manufacture thereof generally include contacting the semiconductor devices or semiconductor tooling with an acidic aqueous cleaning solution free of a fluorine containing compound, the acidic aqueous cleaning solution including at least one antioxidant and at least one non-oxidizing acid.
Abstract:
Cleaning processes for cleaning semiconductor devices or semiconductor tooling during manufacture thereof generally include contacting the semiconductor devices or semiconductor tooling with an antioxidant to form an insoluble adduct followed by solubilizing the adduct with a basic aqueous cleaning solution.