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公开(公告)号：US20190326242A1
公开(公告)日：2019-10-24
申请号：US16502591
申请日：2019-07-03
IPC分类号： H01L23/00
摘要： A multi-layer pillar and method of fabricating the same is provided. The multi-layer pillar is used as an interconnect between a chip and substrate. The pillar has at least one low strength, high ductility deformation region configured to absorb force imposed during chip assembly and thermal excursions
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公开(公告)号：US20170133338A1
公开(公告)日：2017-05-11
申请号：US15405431
申请日：2017-01-13
IPC分类号： H01L23/00
CPC分类号： H01L24/13 , H01L23/562 , H01L24/11 , H01L24/16 , H01L24/81 , H01L2224/0401 , H01L2224/05666 , H01L2224/1145 , H01L2224/11452 , H01L2224/11462 , H01L2224/11901 , H01L2224/13005 , H01L2224/13013 , H01L2224/13023 , H01L2224/1308 , H01L2224/13109 , H01L2224/13111 , H01L2224/13113 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13166 , H01L2224/13171 , H01L2224/13184 , H01L2224/13655 , H01L2224/13666 , H01L2224/13671 , H01L2224/13684 , H01L2224/16235 , H01L2224/81815 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01L2924/2064 , H01L2924/351 , H01L2924/35121 , H01L2924/37001 , H01L2924/384 , Y10T156/10 , H01L2924/00014 , H01L2224/13099 , H01L2224/13599 , H01L2224/05599 , H01L2224/05099 , H01L2224/29099 , H01L2224/29599
摘要： A multi-layer pillar and method of fabricating the same is provided. The multi-layer pillar is used as an interconnect between a chip and substrate. The pillar has at least one low strength, high ductility deformation region configured to absorb force imposed during chip assembly and thermal excursions
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公开(公告)号：US20150054152A1
公开(公告)日：2015-02-26
申请号：US14526665
申请日：2014-10-29
IPC分类号： H01L23/00
CPC分类号： H01L24/13 , H01L23/562 , H01L24/11 , H01L24/16 , H01L24/81 , H01L2224/0401 , H01L2224/05666 , H01L2224/1145 , H01L2224/11452 , H01L2224/11462 , H01L2224/11901 , H01L2224/13005 , H01L2224/13013 , H01L2224/13023 , H01L2224/1308 , H01L2224/13109 , H01L2224/13111 , H01L2224/13113 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13166 , H01L2224/13171 , H01L2224/13184 , H01L2224/13655 , H01L2224/13666 , H01L2224/13671 , H01L2224/13684 , H01L2224/16235 , H01L2224/81815 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01L2924/2064 , H01L2924/351 , H01L2924/35121 , H01L2924/37001 , H01L2924/384 , Y10T156/10 , H01L2924/00014 , H01L2224/13099 , H01L2224/13599 , H01L2224/05599 , H01L2224/05099 , H01L2224/29099 , H01L2224/29599
摘要： A multi-layer pillar and method of fabricating the same is provided. The multi-layer pillar is used as an interconnect between a chip and substrate. The pillar has at least one low strength, high ductility deformation region configured to absorb force imposed during chip assembly and thermal excursions
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公开(公告)号：US20190326243A1
公开(公告)日：2019-10-24
申请号：US16502648
申请日：2019-07-03
IPC分类号： H01L23/00
摘要： A multi-layer pillar and method of fabricating the same is provided. The multi-layer pillar is used as an interconnect between a chip and substrate. The pillar has at least one low strength, high ductility deformation region configured to absorb force imposed during chip assembly and thermal excursions
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公开(公告)号：US20170170135A1
公开(公告)日：2017-06-15
申请号：US15445058
申请日：2017-02-28
IPC分类号： H01L23/00
CPC分类号： H01L24/13 , H01L23/562 , H01L24/11 , H01L24/16 , H01L24/81 , H01L2224/0401 , H01L2224/05666 , H01L2224/1145 , H01L2224/11452 , H01L2224/11462 , H01L2224/11901 , H01L2224/13005 , H01L2224/13013 , H01L2224/13023 , H01L2224/1308 , H01L2224/13109 , H01L2224/13111 , H01L2224/13113 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13166 , H01L2224/13171 , H01L2224/13184 , H01L2224/13655 , H01L2224/13666 , H01L2224/13671 , H01L2224/13684 , H01L2224/16235 , H01L2224/81815 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01L2924/2064 , H01L2924/351 , H01L2924/35121 , H01L2924/37001 , H01L2924/384 , Y10T156/10 , H01L2924/00014 , H01L2224/13099 , H01L2224/13599 , H01L2224/05599 , H01L2224/05099 , H01L2224/29099 , H01L2224/29599
摘要： A multi-layer pillar and method of fabricating the same is provided. The multi-layer pillar is used as an interconnect between a chip and substrate. The pillar has at least one low strength, high ductility deformation region configured to absorb force imposed during chip assembly and thermal excursions
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公开(公告)号：US20190157230A1
公开(公告)日：2019-05-23
申请号：US16250456
申请日：2019-01-17
IPC分类号： H01L23/00
摘要： A multi-layer pillar and method of fabricating the same is provided. The multi-layer pillar is used as an interconnect between a chip and substrate. The pillar has at least one low strength, high ductility deformation region configured to absorb force imposed during chip assembly and thermal excursions
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