公开(公告)号：US09613866B2

公开(公告)日：2017-04-04

申请号：US15155474

申请日：2016-05-16

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Takashi Ando ,  Aritra Dasgupta ,  Oleg Gluschenkov ,  Balaji Kannan ,  Unoh Kwon

IPC: H01L21/20 ,  H01L21/8234 ,  H01L21/02 ,  H01L21/225 ,  H01L27/088 ,  H01L29/51 ,  H01L21/8238

CPC classification number: H01L29/513 ,  H01L21/022 ,  H01L21/02255 ,  H01L21/0228 ,  H01L21/02356 ,  H01L21/2636 ,  H01L21/268 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28229 ,  H01L21/823412 ,  H01L21/823462 ,  H01L21/823857 ,  H01L27/088 ,  H01L29/42364 ,  H01L29/511 ,  H01L29/517 ,  H01L29/518

Abstract: Semiconductor structures and methods of fabricating the same using interrupted deposition processes and multiple laser anneals are provided. The structure includes a high-k gate stack with a high-k bilayer or nanolaminate where a bottom portion of the bilayer is crystallized while a top portion of the bilayer is amorphous.

公开(公告)号：US09859121B2

公开(公告)日：2018-01-02

申请号：US14753954

申请日：2015-06-29

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Aritra Dasgupta ,  Oleg Gluschenkov

IPC: H01L21/28 ,  H01L21/268 ,  H01L29/51

CPC classification number: H01L21/28176 ,  H01L21/268 ,  H01L29/513 ,  H01L29/517

Abstract: Semiconductor structures and methods of fabricating the same using multiple nanosecond pulsed laser anneals are provided. The method includes exposing a gate stack formed on a semiconducting material to multiple nanosecond laser pulses at a peak temperature below a melting point of the semiconducting material.

公开(公告)号：US09613870B2

公开(公告)日：2017-04-04

申请号：US14755829

申请日：2015-06-30

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Takashi Ando ,  Aritra Dasgupta ,  Oleg Gluschenkov ,  Balaji Kannan ,  Unoh Kwon

IPC: H01L29/51 ,  H01L21/8234 ,  H01L29/423 ,  H01L27/088 ,  H01L21/28 ,  H01L21/263

CPC classification number: H01L29/513 ,  H01L21/022 ,  H01L21/02255 ,  H01L21/0228 ,  H01L21/02356 ,  H01L21/2636 ,  H01L21/268 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28229 ,  H01L21/823412 ,  H01L21/823462 ,  H01L21/823857 ,  H01L27/088 ,  H01L29/42364 ,  H01L29/511 ,  H01L29/517 ,  H01L29/518

Abstract: Semiconductor structures and methods of fabricating the same using interrupted deposition processes and multiple laser anneals are provided. The structure includes a high-k gate stack with a high-k bilayer or nanolaminate where a bottom portion of the bilayer is crystallized while a top portion of the bilayer is amorphous.

公开(公告)号：US20160181353A1

公开(公告)日：2016-06-23

申请号：US14572974

申请日：2014-12-17

Applicant: International Business Machines Corporation

Inventor： Takashi Ando ,  Eduard A. Cartier ,  Michael P. Chudzik ,  Aritra Dasgupta ,  Herbert L. Ho ,  Donghun Kang ,  Rishikesh Krishnan ,  Vijay Narayanan ,  Kern Rim

IPC: H01L49/02 ,  H01L23/00

CPC classification number: H01L21/02365 ,  H01G4/005 ,  H01L21/02178 ,  H01L21/02617 ,  H01L21/20 ,  H01L21/3221 ,  H01L23/26 ,  H01L27/10861 ,  H01L27/1087 ,  H01L28/60 ,  H01L28/90 ,  H01L29/66181 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method including forming an oxygen gettering layer on one side of an insulating layer of a deep trench capacitor between the insulating layer and a substrate, the oxygen gettering layer including an aluminum containing compound, and depositing an inner electrode on top of the insulating layer, the inner electrode including a metal.

Abstract translation: 一种包括在绝缘层和衬底之间的深沟槽电容器的绝缘层的一侧上形成氧吸气层的方法，所述吸氧层包括含铝化合物，并且在绝缘层的顶部上沉积内电极， 内部电极包括金属。

公开(公告)号：US09911597B2

公开(公告)日：2018-03-06

申请号：US15595503

申请日：2017-05-15

Applicant: International Business Machines Corporation

Inventor： Takashi Ando ,  Eduard A. Cartier ,  Michael P. Chudzik ,  Aritra Dasgupta ,  Herbert L. Ho ,  Donghun Kang ,  Rishikesh Krishnan ,  Vijay Narayanan ,  Kern Rim

IPC: H01L29/66 ,  H01L21/02 ,  H01L21/322 ,  H01L21/20 ,  H01G4/005 ,  H01L27/108 ,  H01L49/02

CPC classification number: H01L21/02365 ,  H01G4/005 ,  H01L21/02178 ,  H01L21/02617 ,  H01L21/20 ,  H01L21/3221 ,  H01L23/26 ,  H01L27/10861 ,  H01L27/1087 ,  H01L28/60 ,  H01L28/90 ,  H01L29/66181 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method including forming an oxygen gettering layer on one side of an insulating layer of a deep trench capacitor between the insulating layer and a substrate, the oxygen gettering layer including an aluminum containing compound, and depositing an inner electrode on top of the insulating layer, the inner electrode including a metal.

公开(公告)号：US09997610B2

公开(公告)日：2018-06-12

申请号：US15417464

申请日：2017-01-27

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Takashi Ando ,  Aritra Dasgupta ,  Oleg Gluschenkov ,  Balaji Kannan ,  Unoh Kwon

IPC: H01L29/51 ,  H01L27/088 ,  H01L21/8238

CPC classification number: H01L29/513 ,  H01L21/022 ,  H01L21/02255 ,  H01L21/0228 ,  H01L21/02356 ,  H01L21/2636 ,  H01L21/268 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28229 ,  H01L21/823412 ,  H01L21/823462 ,  H01L21/823857 ,  H01L27/088 ,  H01L29/42364 ,  H01L29/511 ,  H01L29/517 ,  H01L29/518

Abstract: Semiconductor structures and methods of fabricating the same using interrupted deposition processes and multiple laser anneals are provided. The structure includes a high-k gate stack with a high-k bilayer or nanolaminate where a bottom portion of the bilayer is crystallized while a top portion of the bilayer is amorphous.

公开(公告)号：US09997361B2

公开(公告)日：2018-06-12

申请号：US15417477

申请日：2017-01-27

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Takashi Ando ,  Aritra Dasgupta ,  Oleg Gluschenkov ,  Balaji Kannan ,  Unoh Kwon

IPC: H01L21/8234 ,  H01L21/28 ,  H01L21/02 ,  H01L21/268 ,  H01L29/51 ,  H01L21/8238

CPC classification number: H01L29/513 ,  H01L21/022 ,  H01L21/02255 ,  H01L21/0228 ,  H01L21/02356 ,  H01L21/2636 ,  H01L21/268 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28229 ,  H01L21/823412 ,  H01L21/823462 ,  H01L21/823857 ,  H01L27/088 ,  H01L29/42364 ,  H01L29/511 ,  H01L29/517 ,  H01L29/518

Abstract: Semiconductor structures and methods of fabricating the same using interrupted deposition processes and multiple laser anneals are provided. The structure includes a high-k gate stack with a high-k bilayer or nanolaminate where a bottom portion of the bilayer is crystallized while a top portion of the bilayer is amorphous.

公开(公告)号：US11201061B2

公开(公告)日：2021-12-14

申请号：US16552547

申请日：2019-08-27

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Aritra Dasgupta ,  Oleg Gluschenkov

IPC: H01L21/28 ,  H01L21/268 ,  H01L29/51

Abstract: Semiconductor structures and methods of fabricating the same using multiple nanosecond pulsed laser anneals are provided. The method includes exposing a gate stack formed on a semiconducting material to multiple nanosecond laser pulses at a peak temperature below a melting point of the semiconducting material.

公开(公告)号：US10553439B2

公开(公告)日：2020-02-04

申请号：US15819092

申请日：2017-11-21

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Aritra Dasgupta ,  Oleg Gluschenkov

IPC: H01L21/268 ,  H01L21/28 ,  H01L29/51

Abstract: Semiconductor structures and methods of fabricating the same using multiple nanosecond pulsed laser anneals are provided. The method includes exposing a gate stack formed on a semiconducting material to multiple nanosecond laser pulses at a peak temperature below a melting point of the semiconducting material.

公开(公告)号：US20170250073A1

公开(公告)日：2017-08-31

申请号：US15595503

申请日：2017-05-15

Applicant: International Business Machines Corporation

Inventor： Takashi Ando ,  Eduard A. Cartier ,  Michael P. Chudzik ,  Aritra Dasgupta ,  Herbert L. Ho ,  Donghun Kang ,  Rishikesh Krishnan ,  Vijay Narayanan ,  Kern Rim

IPC: H01L21/02 ,  H01L21/20 ,  H01G4/005 ,  H01L21/322

CPC classification number: H01L21/02365 ,  H01G4/005 ,  H01L21/02178 ,  H01L21/02617 ,  H01L21/20 ,  H01L21/3221 ,  H01L23/26 ,  H01L27/10861 ,  H01L27/1087 ,  H01L28/60 ,  H01L28/90 ,  H01L29/66181 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method including forming an oxygen gettering layer on one side of an insulating layer of a deep trench capacitor between the insulating layer and a substrate, the oxygen gettering layer including an aluminum containing compound, and depositing an inner electrode on top of the insulating layer, the inner electrode including a metal.