公开(公告)号：US10157956B2

公开(公告)日：2018-12-18

申请号：US15477191

申请日：2017-04-03

申请人： INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

发明人： Hushan Cui ,  Jinjuan Xiang ,  Xiaobin He ,  Tao Yang ,  Junfeng Li ,  Chao Zhao

IPC分类号： H01L21/00 ,  H01L27/146 ,  H01L31/0216 ,  H01L31/0232

摘要： A method for monolithic integration of a hyperspectral image sensor is provided, which includes: forming a bottom reflecting layer on a surface of the photosensitive region of a CMOS image sensor wafer; forming a transparent cavity layer composed of N step structures on the bottom reflecting layer through area selective atomic layer deposition processes, where N=2m, m≥1 and m is a positive integer; and forming a top reflecting layer on the transparent cavity layer. With the method, non-uniformity accumulation due to etching processes in conventional technology is minimized, and the cavity layer can be made of materials which cannot be etched. Mosaic cavity layers having such repeated structures with different heights can be formed by extending one-dimensional ASALD, such as extending in another dimension and forming repeated regions, which can be applied to snapshot hyperspectral image sensors, for example, pixels, and greatly improving performance thereof.

公开(公告)号：US20150287606A1

公开(公告)日：2015-10-08

申请号：US14744835

申请日：2015-06-19

申请人： INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

发明人： Qiang Xu ,  Chao Zhao ,  Jun Luo ,  Guilei Wang ,  Tao Yang ,  Junfeng Li

IPC分类号： H01L21/285 ,  H01L21/28

CPC分类号： H01L21/28562 ,  C23C16/0272 ,  C23C16/14 ,  C23C16/45525 ,  H01L21/28079 ,  H01L21/28088 ,  H01L21/32051 ,  H01L21/76876 ,  H01L21/76877 ,  H01L29/66545

摘要： A method of depositing a tungsten (W) layer is disclosed. In one aspect, the method includes depositing a SiH4 base W film on a surface of a substrate to preprocess the surface. The method includes depositing a B2H6 base W layer on the preprocessed surface. The SiH4 base W film may be several atom layers thick. The film and base W layer may be deposited in a single ALD process, include reactive gas soak, reactive gas introduction, and main deposition operations. Forming the film may include introducing SiH4 gas into a reactive cavity during the gas soak operation, and introducing SiH4 and WF6 gas into the cavity during the gas introduction operation. The SiH4 and WF6 gases may be alternately introduced, for a number of cycles depending on the thickness of the tungsten layer to be deposited.

摘要翻译： 公开了沉积钨（W）层的方法。 一方面，该方法包括在衬底的表面上沉积SiH 4基底W膜以预处理该表面。 该方法包括在预处理的表面上沉积B2H6基底W层。 SiH4基底W膜可以是几个原子层厚。 膜和基底W层可以沉积在单个ALD工艺中，包括反应气体浸泡，反应气体引入和主沉积操作。 形成膜可以包括在气体浸泡操作期间将SiH 4气体引入反应腔中，并且在气体引入操作期间将SiH 4和WF 6气体引入空腔。 SiH4和WF6气体可以根据待沉积的钨层的厚度交替地引入多个循环。

公开(公告)号：US10096691B2

公开(公告)日：2018-10-09

申请号：US14812490

申请日：2015-07-29

申请人： INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

发明人： Qingzhu Zhang ,  Lichuan Zhao ,  Xiongkun Yang ,  Huaxiang Yin ,  Jiang Yan ,  Junfeng Li ,  Tao Yang ,  Jinbiao Liu

IPC分类号： H01L29/66 ,  H01L21/265 ,  H01L29/167 ,  H01L29/417 ,  H01L21/28

摘要： A method for forming a metal silicide. The method comprises: providing a substrate having a fin, a gate formed on the fin, and spacers formed on opposite sides of the gate; depositing a Ti metal layer; siliconizing the Ti metal layer; and removing unreacted Ti metal layer. As the Ti atoms have relatively stable characteristics, diffusion happens mostly to Si atoms while the Ti atoms rarely diffuse during the thermal annealing. As a result, current leakage can be prevented in a depletion region and thus leakage current of the substrate can be reduced.

公开(公告)号：US09590076B1

公开(公告)日：2017-03-07

申请号：US14402303

申请日：2014-08-01

申请人： INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

发明人： Jinbiao Liu ,  Yao Wang ,  Guilei Wang ,  Tao Yang ,  Qing Liu ,  Junfeng Li

IPC分类号： H01L21/336 ,  H01L29/66 ,  H01L29/78 ,  H01L21/306 ,  H01L21/311 ,  H01L21/265 ,  H01L29/08

CPC分类号： H01L29/66795 ,  H01L21/265 ,  H01L21/30604 ,  H01L21/31111 ,  H01L29/0847 ,  H01L29/785

摘要： A method for manufacturing a FinFET device, including providing a substrate; implementing a source/drain doping on the substrate; etching the doped substrate to form a source region and a drain region; forming a fin channel between the source region and the drain region; and forming a gate on the Fin channel. The fin and the gate are formed after the source/drain doping is implemented on the substrate, so that the source/drain doping is done as a doping for a planar device, which ensures the quality of the source/drain coping and improves the property of the FinFET device.

摘要翻译： 一种制造FinFET器件的方法，包括提供衬底; 在衬底上实现源极/漏极掺杂; 蚀刻掺杂衬底以形成源区和漏区; 在源极区域和漏极区域之间形成鳍状沟道; 并在Fin通道上形成一个门。 在源极/漏极掺杂在衬底上实现之后形成鳍和栅极，使得源极/漏极掺杂作为平面器件的掺杂进行，这确保了源/漏极应对的质量并提高了其性能 的FinFET器件。

公开(公告)号：US09589809B2

公开(公告)日：2017-03-07

申请号：US14744835

申请日：2015-06-19

申请人： INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

发明人： Qiang Xu ,  Chao Zhao ,  Jun Luo ,  Guilei Wang ,  Tao Yang ,  Junfeng Li

IPC分类号： H01L21/28 ,  H01L21/285 ,  C23C16/02 ,  C23C16/14 ,  C23C16/455 ,  H01L21/3205 ,  H01L21/768

CPC分类号： H01L21/28562 ,  C23C16/0272 ,  C23C16/14 ,  C23C16/45525 ,  H01L21/28079 ,  H01L21/28088 ,  H01L21/32051 ,  H01L21/76876 ,  H01L21/76877 ,  H01L29/66545

摘要： A method of depositing a tungsten (W) layer is disclosed. In one aspect, the method includes depositing a SiH4 base W film on a surface of a substrate to preprocess the surface. The method includes depositing a B2H6 base W layer on the preprocessed surface. The SiH4 base W film may be several atom layers thick. The film and base W layer may be deposited in a single ALD process, include reactive gas soak, reactive gas introduction, and main deposition operations. Forming the film may include introducing SiH4 gas into a reactive cavity during the gas soak operation, and introducing SiH4 and WF6 gas into the cavity during the gas introduction operation. The SiH4 and WF6 gases may be alternately introduced, for a number of cycles depending on the thickness of the tungsten layer to be deposited.

摘要翻译： 公开了沉积钨（W）层的方法。 一方面，该方法包括在衬底的表面上沉积SiH 4基底W膜以预处理该表面。 该方法包括在预处理的表面上沉积B2H6基底W层。 SiH4基底W膜可以是几个原子层厚。 膜和基底W层可以沉积在单个ALD工艺中，包括反应气体浸泡，反应气体引入和主沉积操作。 形成膜可以包括在气体浸泡操作期间将SiH 4气体引入反应腔中，并且在气体引入操作期间将SiH 4和WF 6气体引入空腔。 SiH4和WF6气体可以根据待沉积的钨层的厚度交替地引入多个循环。