公开(公告)号：US09492841B2

公开(公告)日：2016-11-15

申请号：US13847457

申请日：2013-03-19

申请人： IMEC ,  St. Petersburg Electrotechnical University

发明人： Victor Luchinin ,  Svetlana Goloudina ,  Vyacheslav Pasyuta ,  Alexey Ivanov ,  Mikhail Baklanov ,  Mikhail Krishtab

IPC分类号： B05D1/20 ,  B32B37/15 ,  B32B18/00 ,  B32B27/04 ,  B32B27/28 ,  H05K1/03 ,  H01L21/02 ,  H05K3/14 ,  C09D179/08 ,  C08G73/10

CPC分类号： B32B37/15 ,  B05D1/20 ,  B05D1/208 ,  B32B18/00 ,  B32B27/04 ,  B32B27/281 ,  B32B2260/046 ,  B32B2305/026 ,  B32B2305/07 ,  B32B2307/00 ,  B32B2307/204 ,  B32B2379/08 ,  B32B2457/00 ,  C08G73/1067 ,  C09D179/08 ,  H01L21/02285 ,  H01L21/02318 ,  H05K1/03 ,  H05K3/143 ,  H05K2201/01 ,  H05K2201/0104 ,  H05K2201/0116 ,  H05K2201/0154 ,  H05K2201/0162 ,  Y10T428/249979 ,  Y10T428/249991 ,  C08K5/175

摘要： Method for pore sealing a porous substrate, comprising: forming a continuous monolayer of a polyimide precursor on a liquid surface, transferring said polyimide precursor monolayer onto the porous substrate with the Langmuir-Blodgett technique, and imidization of the transferred polyimide precursor monolayers, thereby forming a polyimide sealing layer on the porous substrate. Porous substrate having at least one surface on which a sealing layer is provided to seal pores of the substrate, wherein the sealing layer is a polyimide having a thickness of a few monolayers and wherein there is no penetration of the polyimide into the pores.

摘要翻译： 用于孔密封多孔基材的方法，包括：在液体表面上形成聚酰亚胺前体的连续单层，使用Langmuir-Blodgett技术将所述聚酰亚胺前体单层转移到多孔基材上，并将转移的聚酰亚胺前体单层酰亚胺化，从而形成 多孔基材上的聚酰亚胺密封层。 具有至少一个表面的多孔基材，其上设有密封层以密封基材的孔，其中密封层是具有几个单层厚度的聚酰亚胺，并且其中聚酰亚胺不渗透到孔中。

公开(公告)号：US20190135998A1

公开(公告)日：2019-05-09

申请号：US16230674

申请日：2018-12-21

申请人： IMEC ,  St. Petersburg Electrotechnical University

发明人： Victor Luchinin ,  Svetlana Goloudina ,  Vyacheslav Pasyuta ,  Alexey Ivanov ,  Mikhail Baklanov ,  Mikhail Krishtab

IPC分类号： C08J5/18 ,  B05D1/20 ,  H01L23/532

摘要： Method for pore sealing a porous substrate, comprising: forming a continuous monolayer of a polyimide precursor on a liquid surface, transferring said polyimide precursor monolayer onto the porous substrate with the Langmuir-Blodgett technique, and imidization of the transferred polyimide precursor monolayers, thereby forming a polyimide sealing layer on the porous substrate. Porous substrate having at least one surface on which a sealing layer is provided to seal pores of the substrate, wherein the sealing layer is a polyimide having a thickness of a few monolayers and wherein there is no penetration of the polyimide into the pores.

公开(公告)号：US20170021604A1

公开(公告)日：2017-01-26

申请号：US15285445

申请日：2016-10-04

申请人： IMEC ,  St. Petersburg Electrotechnical University

发明人： Victor Luchinin ,  Svetlana Goloudina ,  Vyacheslav Pasyuta ,  Alexey Ivanov ,  Mikhail Baklanov ,  Mikhail Krishtab

IPC分类号： B32B37/15 ,  B05D1/20 ,  B32B27/28

CPC分类号： C08J5/18 ,  B05D1/20 ,  B05D1/204 ,  B05D1/208 ,  B05D2505/50 ,  B32B18/00 ,  B32B27/04 ,  B32B27/281 ,  B32B37/15 ,  B32B2260/046 ,  B32B2305/026 ,  B32B2305/07 ,  B32B2307/00 ,  B32B2307/204 ,  B32B2379/08 ,  B32B2457/00 ,  B82Y30/00 ,  B82Y40/00 ,  C08G73/1067 ,  C08J2379/08 ,  C08J2483/02 ,  C09D179/08 ,  H01L21/02285 ,  H01L21/02318 ,  H01L23/5329 ,  H05K1/03 ,  H05K3/143 ,  H05K2201/01 ,  H05K2201/0104 ,  H05K2201/0116 ,  H05K2201/0154 ,  H05K2201/0162 ,  Y10T428/249979 ,  Y10T428/249991 ,  C08K5/175

摘要： Method for pore sealing a porous substrate, comprising: forming a continuous monolayer of a polyimide precursor on a liquid surface, transferring said polyimide precursor monolayer onto the porous substrate with the Langmuir-Blodgett technique, and imidization of the transferred polyimide precursor monolayers, thereby forming a polyimide sealing layer on the porous substrate. Porous substrate having at least one surface on which a sealing layer is provided to seal pores of the substrate, wherein the sealing layer is a polyimide having a thickness of a few monolayers and wherein there is no penetration of the polyimide into the pores.

摘要翻译： 用于孔密封多孔基材的方法，包括：在液体表面上形成聚酰亚胺前体的连续单层，使用Langmuir-Blodgett技术将所述聚酰亚胺前体单层转移到多孔基材上，并将转移的聚酰亚胺前体单层酰亚胺化，从而形成 多孔基材上的聚酰亚胺密封层。 具有至少一个表面的多孔基材，其上设有密封层以密封基材的孔，其中密封层是具有几个单层厚度的聚酰亚胺，并且其中聚酰亚胺不渗透到孔中。

公开(公告)号：US20130251978A1

公开(公告)日：2013-09-26

申请号：US13847457

申请日：2013-03-19

申请人： IMEC ,  ST. PETERSBURG ELECTROTECHNICAL UNIVERSITY

发明人： Victor Luchinin ,  Svetlana Goloudina ,  Vyacheslav Pasyuta ,  Alexey Ivanov ,  Mikhail Baklanov ,  Mikhail Krishtab

IPC分类号： B32B37/15

CPC分类号： B32B37/15 ,  B05D1/20 ,  B05D1/208 ,  B32B18/00 ,  B32B27/04 ,  B32B27/281 ,  B32B2260/046 ,  B32B2305/026 ,  B32B2305/07 ,  B32B2307/00 ,  B32B2307/204 ,  B32B2379/08 ,  B32B2457/00 ,  C08G73/1067 ,  C09D179/08 ,  H01L21/02285 ,  H01L21/02318 ,  H05K1/03 ,  H05K3/143 ,  H05K2201/01 ,  H05K2201/0104 ,  H05K2201/0116 ,  H05K2201/0154 ,  H05K2201/0162 ,  Y10T428/249979 ,  Y10T428/249991 ,  C08K5/175

摘要： Method for pore sealing a porous substrate, comprising: forming a continuous monolayer of a polyimide precursor on a liquid surface, transferring said polyimide precursor monolayer onto the porous substrate with the Langmuir-Blodgett technique, and imidization of the transferred polyimide precursor monolayers, thereby forming a polyimide sealing layer on the porous substrate. Porous substrate having at least one surface on which a sealing layer is provided to seal pores of the substrate, wherein the sealing layer is a polyimide having a thickness of a few monolayers and wherein there is no penetration of the polyimide into the pores.

摘要翻译： 用于孔密封多孔基材的方法，包括：在液体表面上形成聚酰亚胺前体的连续单层，使用Langmuir-Blodgett技术将所述聚酰亚胺前体单层转移到多孔基材上，并将转移的聚酰亚胺前体单层酰亚胺化，从而形成 多孔基材上的聚酰亚胺密封层。 具有至少一个表面的多孔基材，其上设有密封层以密封基材的孔，其中密封层是具有几个单层厚度的聚酰亚胺，并且其中聚酰亚胺不渗透到孔中。

公开(公告)号：US20130075876A1

公开(公告)日：2013-03-28

申请号：US13622141

申请日：2012-09-18

申请人： IMEC ,  Universiteit Gent

发明人： Frederik Goethals ,  Pascal Van Der Voort ,  Isabel Van Driessche ,  Mikhail Baklanov

IPC分类号： H01L21/312 ,  H01L23/29

CPC分类号： H01L21/31058 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02362 ,  H01L21/3105 ,  Y10T428/249978 ,  Y10T428/249979 ,  Y10T428/249981

摘要： A method for at least partially sealing a porous material is provided, comprising forming a sealing layer onto the porous material by applying a sealing compound comprising oligomers wherein the oligomers are formed by ageing a precursor solution comprising cyclic carbon bridged organosilica and/or bridged organosilanes. The method is especially designed for low k dielectric porous materials to be incorporated into semiconductor devices.

摘要翻译： 提供了一种用于至少部分地密封多孔材料的方法，包括通过施加包含低聚物的密封化合物形成密封层到所述多孔材料上，所述密封化合物通过使包含环状碳桥连的有机硅和/或桥连的有机硅烷的前体溶液老化而形成所述低聚物。 该方法特别设计用于要并入半导体器件的低k电介质多孔材料。

公开(公告)号：US09941151B2

公开(公告)日：2018-04-10

申请号：US15489584

申请日：2017-04-17

申请人： IMEC VZW ,  Katholieke Universiteit Leuven

发明人： Liping Zhang ,  Mikhail Baklanov

IPC分类号： H01L21/768

CPC分类号： H01L21/76811 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76843 ,  H01L21/76879 ,  H01L21/76885

摘要： A method of forming a metallization layer of an IC having a lower via level and an upper trench level is disclosed. In one aspect, the method includes applying a dual damascene process to a stack of two layers. The bottom layer includes a porous low-k dielectric in which the pores have been filled by a template material. The top layer is a template layer. This stack is obtained by depositing a template layer on top of a porous low-k dielectric and annealing in order to let the template material diffuse into the pores of the low-k layer. At the end of the anneal process, a stack of a pore-filled layer and a template layer is obtained. Vias are etched in the low-k layer and trenches are etched in the template layer. The template pore-filling protects the low-k dielectric during plasma etching, metal barrier deposition and metal deposition.

公开(公告)号：US08540890B2

公开(公告)日：2013-09-24

申请号：US13675442

申请日：2012-11-13

申请人： IMEC ,  GLOBALFOUNDRIES Inc.

发明人： Mikhail Baklanov ,  Francesca Iacopi ,  Serge Vanhaelemeersch

IPC分类号： B31D3/00

CPC分类号： H01B19/04 ,  H01L21/3105 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/76802 ,  H01L21/76814 ,  H01L21/7682 ,  H01L21/76826

摘要： A method for treating a surface of a porous material in an environment is provided, comprising setting the temperature of the surface to a value T1 and setting the pressure of the environment to a value P1, contacting the surface with a fluid having a solidifying temperature at the pressure value P1 above the value T1 and having a vaporizing temperature at the pressure value P1 below 80° C., thereby solidifying the fluid in pores of the material, thereby sealing the pores, treating the surface, wherein the treatment is preferably an etching or a modification of the surface, and setting the temperature of the surface to a value T2 and setting the pressure of the environment to a value P2 in such a way as to vaporize the fluid.

摘要翻译： 提供一种在环境中处理多孔材料的表面的方法，包括将表面的温度设定为值T1，并将环境压力设定为值P1，使表面与具有凝固温度的流体接触 压力值P1高于值T1，并且具有低于80℃的压力值P1的蒸发温度，从而使材料的孔隙中的流体固化，从而密封孔，处理表面，其中处理优选为蚀刻 或表面的修改，并将表面的温度设定为值T2，并将环境的压力设定为值P2，以使气体蒸发。

公开(公告)号：US20150170910A1

公开(公告)日：2015-06-18

申请号：US14555356

申请日：2014-11-26

申请人： IMEC VZW ,  Katholieke Universiteit Leuven, KU LEUVEN R&D

发明人： Quoc Toan Le ,  Mikhail Baklanov ,  Yiting Sun ,  Silvia Armini

IPC分类号： H01L21/02

CPC分类号： H01L21/02359 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02343 ,  H01L21/3105 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76831

摘要： A method is provided for activating an exposed surface of a porous dielectric layer, the method comprising the steps of: filling with a first liquid at least the pores present in a part of the porous dielectric layer, the part comprising the exposed surface, removing the first liquid selectively from the surface, activating the exposed surface, and removing the first liquid from the bulk part of the porous dielectric layer.

摘要翻译： 提供一种用于激活多孔电介质层的暴露表面的方法，该方法包括以下步骤：至少填充第一液体至少存在于多孔电介质层的一部分中的孔，该部分包括暴露表面，去除 第一液体从表面选择性地起作用，激活暴露的表面，以及从多孔介电层的本体部分去除第一液体。

公开(公告)号：US20130119014A1

公开(公告)日：2013-05-16

申请号：US13675442

申请日：2012-11-13

申请人： IMEC ,  GLOBALFOUNDERIES Inc.

发明人： Mikhail Baklanov ,  Francesca Iacopi ,  Serge Vanhaelemeersch

IPC分类号： H01B19/04

CPC分类号： H01B19/04 ,  H01L21/3105 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/76802 ,  H01L21/76814 ,  H01L21/7682 ,  H01L21/76826

摘要： A method for treating a surface of a porous material in an environment is provided, comprising setting the temperature of the surface to a value T1 and setting the pressure of the environment to a value P1, contacting the surface with a fluid having a solidifying temperature at the pressure value P1 above the value T1 and having a vaporizing temperature at the pressure value P1 below 80° C., thereby solidifying the fluid in pores of the material, thereby sealing the pores, treating the surface, wherein the treatment is preferably an etching or a modification of the surface, and setting the temperature of the surface to a value T2 and setting the pressure of the environment to a value P2 in such a way as to vaporize the fluid.

摘要翻译： 提供一种在环境中处理多孔材料的表面的方法，包括将表面的温度设定为值T1，并将环境压力设定为值P1，使表面与具有凝固温度的流体接触 压力值P1高于值T1，并且具有低于80℃的压力值P1的蒸发温度，从而使材料的孔隙中的流体固化，从而密封孔，处理表面，其中处理优选为蚀刻 或表面的修改，并将表面的温度设定为值T2，并将环境的压力设定为值P2，以使气体蒸发。

公开(公告)号：US20170301583A1

公开(公告)日：2017-10-19

申请号：US15489584

申请日：2017-04-17

申请人： IMEC VZW ,  Katholieke Universiteit Leuven

发明人： Liping Zhang ,  Mikhail Baklanov

IPC分类号： H01L21/768

CPC分类号： H01L21/76811 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76843 ,  H01L21/76879 ,  H01L21/76885

摘要： A method of forming a metallization layer of an IC having a lower via level and an upper trench level is disclosed. In one aspect, the method includes applying a dual damascene process to a stack of two layers. The bottom layer includes a porous low-k dielectric in which the pores have been filled by a template material. The top layer is a template layer. This stack is obtained by depositing a template layer on top of a porous low-k dielectric and annealing in order to let the template material diffuse into the pores of the low-k layer. At the end of the anneal process, a stack of a pore-filled layer and a template layer is obtained. Vias are etched in the low-k layer and trenches are etched in the template layer. The template pore-filling protects the low-k dielectric during plasma etching, metal barrier deposition and metal deposition.