Abstract:
A line layout structure comprises first metal lines disposed in a first direction on a cell array region to form first power lines for supplying power to static memory cells, second metal lines disposed over the first metal lines in a second direction substantially perpendicular to the first metal lines to form second power lines for supplying power to the first power lines, third metal lines disposed over the second metal lines to form third power lines for supplying power to the second power lines, and fourth metal lines disposed over the third metal lines to form fourth power lines for supplying power to the third power lines.
Abstract:
An apparatus including a trolling motor having at least one operational subsystem and the trolling motor also having an integral electronic controller for controlling the operational subsystem wherein the improvement comprises an integral electronic diagnostic system which will receive diagnostic information from the operational subsystem and will transmit the diagnostic information for reception externally of the trolling motor.
Abstract:
A read-only memory device having a NOR structure is provided. The memory device comprises a memory cell array having a plurality of memory cells, each memory cell storing data, a plurality of first bit lines coupled to the array, and a plurality of second bit lines coupled to the array. A first selection circuit are coupled to the plurality of first bit lines for selecting at least two adjacent first bit lines. A second selection circuit coupled to the plurality of second bit lines for selecting at least two adjacent second bit lines. A sense amplification circuit detect a cell state of a selected memory cell by biasing the selected first bit lines and one of the selected second bit lines with a same potential. The second selection circuit grounds another of the selected second bit lines. The first selection circuit grounds unselected first bit lines and wherein the second selection circuit grounds unselected second bit lines. According to the mask ROM of the present invention, leakage current paths to the biased main and ground bit lines are cut off during a data reading operation of an off-cell. The biased main and ground bit lines can be charged by only one sense amplification circuit.
Abstract:
Embodiments of the invention provide a semiconductor wafer cleaning apparatus and a related method. In one embodiment, the invention provides a semiconductor wafer cleaning apparatus comprising a wafer stage adapted to support a wafer; a first cleaning unit adapted to spray a first cleaning solution onto the wafer to remove particles from the wafer, wherein the first cleaning solution prevents static electricity from being generated on the surface of the wafer; and a second cleaning unit adapted to provide a second cleaning solution onto the wafer and oscillate a quartz rod to remove particles from the wafer, wherein the second cleaning solution makes a surface of the wafer hydrophilic.