摘要:
A photoresist or a residue of the photoresist may by removed by the hydrogen and water plasma mixture. The process may be performed at a temperature range between about 150° C. and about 450° C., preferably about 250° C., and a power range between about 500 W and about 3000 W, preferably about 1400 W.
摘要:
A photoresist or a residue of the photoresist may by removed by the hydrogen and water plasma mixture. The process may be performed at a temperature range between about 150° C. and about 450° C., preferably about 250° C., and a power range between about 500 W and about 3000 W, preferably about 1400 W.
摘要:
A method and apparatus for removing volatile residues from a substrate are provided. In one embodiment, a method for volatile residues from a substrate includes providing a processing system having a load lock chamber and at least one processing chamber coupled to a transfer chamber, treating a substrate in the processing chamber with a chemistry comprising halogen, and removing volatile residues from the treated substrate in the load lock chamber.
摘要:
A method and apparatus for removing volatile residues from a substrate are provided. In one embodiment, a method for volatile residues from a substrate includes providing a processing system having a load lock chamber and at least one processing chamber coupled to a transfer chamber, treating a substrate in the processing chamber with a chemistry comprising halogen, and removing volatile residues from the treated substrate in the load lock chamber.
摘要:
A method and apparatus for removing volatile residues from a substrate are provided. In one embodiment, a method for volatile residues from a substrate includes providing a processing system having a load lock chamber and at least one processing chamber coupled to a transfer chamber, treating a substrate in the processing chamber with a chemistry comprising halogen, and removing volatile residues from the treated substrate in the load lock chamber.
摘要:
A method and apparatus for removing volatile residues from a substrate are provided. In one embodiment, a method for volatile residues from a substrate includes providing a processing system having a load lock chamber and at least one processing chamber coupled to a transfer chamber, treating a substrate in the processing chamber with a chemistry comprising halogen, and removing volatile residues from the treated substrate in the load lock chamber.
摘要:
Apparatus and methods for removing particle contaminants from a solid surface includes providing a layer of a viscoelastic material on the solid surface. The viscoelastic material is applied as a thin film and exhibits substantial liquid-like characteristics. The viscoelastic material at least partially binds with the particle contaminants. A high velocity liquid is applied to the viscoelastic material, such that the viscoelastic material exhibits solid-like behavior. The viscoelastic material is thus dislodged from the solid surface along with the particle contaminants, thereby cleaning the solid surface of the particle contaminants.
摘要:
Apparatus and methods for removing particle contaminants from a solid surface includes providing a layer of a viscoelastic material on the solid surface. The viscoelastic material is applied as a thin film and exhibits substantial liquid-like characteristics. The viscoelastic material at least partially binds with the particle contaminants. A high velocity liquid is applied to the viscoelastic material, such that the viscoelastic material exhibits solid-like behavior. The viscoelastic material is thus dislodged from the solid surface along with the particle contaminants, thereby cleaning the solid surface of the particle contaminants.
摘要:
The embodiments provide apparatus and methods for removing particles from a substrate surface, especially from a surface of a patterned substrate (or wafer). The cleaning apparatus and methods have advantages in cleaning patterned substrates with fine features without substantially damaging the features on the substrate surface. The cleaning apparatus and methods involve using a viscoelastic cleaning material containing a polymeric compound with large molecular weight, such as greater than 10,000 g/mol. The viscoelastic cleaning material entraps at least a portion of the particles on the substrate surface. The application of a force on the viscoelastic cleaning material over a sufficiently short period time causes the material to exhibit solid-like properties that facilitate removal of the viscoelastic cleaning material along with the entrapped particles. A number of forces can be applied over a short period to access the solid-like nature of the viscoelastic cleaning material. Alternatively, when the temperature of the viscoelastic cleaning material is lowered, the visoelastic cleaning material also exhibits solid-like properties.
摘要:
Methods and apparatuses to etch recesses in a silicon substrate having an isotropic character to undercut a transistor in preparation for a source/drain regrowth. In one embodiment, a cap layer of a first thickness is deposited over a transistor gate stack and spacer structure. The cap layer is then selectively etched in a first region of the substrate, such as a p-MOS region, using a first isotropic plasma etch process and a second anisotropic plasma etch process. In another embodiment, an at least partially isotropic plasma recess etch is performed to provide a recess adjacent to the channel region of the transistor. In a particular embodiment, the plasma etch process provides a recess sidewall that is neither positively sloped nor more than 10 nm re-entrant.