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公开(公告)号：US11545336B2
公开(公告)日：2023-01-03
申请号：US17043140
申请日：2019-04-05
IPC分类号： H01J37/28 , H01J37/22 , H01J37/244
摘要： A scanning electron microscopy system that includes a primary electron beam radiation unit configured to irradiate a first pattern of a substrate having a second pattern formed in a peripheral region of the first pattern, a detection unit configured to detect back scattered electrons emitted from the substrate, an image generation unit configured to generate an electron beam image corresponding to a strength of the back scattered electrons, a designating unit configured to designate a depth measurement region in which the first pattern exists on the electron beam image, and a processing unit configured to obtain an image signal of the depth measurement region and a pattern density in the peripheral region where the second pattern exists, and to estimate a depth of the first pattern based on the obtained image signal of the depth measurement region and the pattern density in the peripheral region.
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公开(公告)号：US11195690B2
公开(公告)日：2021-12-07
申请号：US16851749
申请日：2020-04-17
发明人： Takuma Yamamoto
IPC分类号： H01J37/22 , H01J37/244 , H01J37/28
摘要： Even when the amount of overlay deviation between patterns located in different layers is large, correct measurement of the amount of overlay deviation is stably performed. The charged particle beam device includes a charged particle beam irradiation unit that irradiates a sample with a charged particle beam, a first detection unit that detects secondary electrons from the sample, a second detection unit that detects backscattered electrons from the sample, and an image processing unit that generates a first image including an image of a first pattern located on the surface of the sample based on an output of the first detection unit, and generates a second image including an image of a second pattern located in a lower layer than the surface of the sample based on an output of the second detection unit. A control unit adjusts the position of a measurement area in the first image based on a first template image for the first image, and adjusts the position of a measurement area in the second image based on a second template image for the second image.
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公开(公告)号：US20210012998A1
公开(公告)日：2021-01-14
申请号：US17042290
申请日：2019-04-05
发明人： Takahiro Nishihata , Mayuka Osaki , Takuma Yamamoto , Akira Hamaguchi , Yusuke Iida , Chihiro Ida
IPC分类号： H01J37/22 , H01J37/26 , H01J37/244 , G01N23/203 , G06T7/00 , G06T11/00 , G06T7/70
摘要： An electron microscope apparatus includes a detection unit that detects reflected electrons reflected from a sample when the sample is irradiated with primary electrons emitted by a primary electron generation unit (electron gun), an image generation unit that generates an image of a surface of the sample with the reflected electrons based on output from the detection unit, and a processing unit that generates a differential waveform signal of the image generated by the image generation unit, processes the image by using information of the differential waveform signal, and measures a dimension of a pattern formed on the sample.
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公开(公告)号：US10816332B2
公开(公告)日：2020-10-27
申请号：US16086063
申请日：2016-04-13
发明人： Hiroya Ohta , Kenji Tanimoto , Tomohiro Tamori , Takuma Yamamoto
IPC分类号： G01B15/00 , H01J37/244 , H01J37/20 , H01J37/147
摘要： The purpose of the present invention is to provide a pattern measurement device that is capable of highly accurately measuring a groove bottom, hole bottom, or the like, regardless of the accuracy of the formation of a deep groove or deep hole. To that end, the present invention proposes a pattern measurement device provided with a computation device for measuring the dimensions of a pattern formed on a sample on the basis of a signal obtained by a charged particle beam device, wherein the computation device determines the deviation between a first part of the pattern and a second part of the pattern at a different height than the first part and pattern dimension values on the basis of a detection signal obtained on the basis of the scanning of the sample by a charged particle beam and corrects the pattern dimension values using the deviation determined from the detection signal and relationship information indicating the relationship between the pattern dimensions and the deviation.
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公开(公告)号：US20220359151A1
公开(公告)日：2022-11-10
申请号：US17788887
申请日：2020-01-10
发明人： Wei Sun , Yasunori Goto , Takuma Yamamoto , Makoto Sakakibara
IPC分类号： H01J37/22 , H01J37/244 , H01J37/147 , H01J37/28 , G06N3/08
摘要： From a reference waveform 112 and a BSE signal waveform 211 that is extracted from a backscattered electron image and indicates a backscattered electron signal intensity from a pattern along a first direction, a difference waveform indicating a relationship between the backscattered electron signal intensity and a difference between a coordinate of the BSE signal waveform and a coordinate of the reference waveform which have the same backscattered electron signal intensity is generated, and presence or absence of a shielded region 203 that is not irradiated with a primary electron beam on a side wall of the pattern is determined based on the difference waveform. The reference waveform indicates a backscattered electron signal intensity from a reference pattern along the first direction in which the side wall is formed perpendicularly to an upper surface and a bottom surface of the pattern when the reference pattern is scanned with the primary electron beam.
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公开(公告)号：US20220260930A1
公开(公告)日：2022-08-18
申请号：US17732969
申请日：2022-04-29
发明人： Takuma Yamamoto , Hiroya Ohta , Kenji Tanimoto , Yusuke Abe , Tomohiro Tamori , Masaaki Nojiri
IPC分类号： G03F7/20 , G01B15/04 , G01N23/225
摘要： A computation device is provided for measuring the dimensions of patterns formed on a sample based on a signal obtained from a charged particle beam device. The computation device includes a positional deviation amount calculation unit for calculating the amount of positional deviation in a direction parallel to a wafer surface between two patterns having different heights based on an image acquired at a given beam tilt angle; a pattern inclination amount calculation unit for calculating an amount of pattern inclination from the amount of positional deviation using a predetermined relational expression for the amount of positional deviation and the amount of pattern inclination; and a beam tilt control amount calculation unit for controlling the beam tilt angle so as to match the amount of pattern inclination. The pattern measurement device sets the beam tilt angle to a calculated beam tilt angle, reacquires an image and measures the patterns.
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公开(公告)号：US20210027983A1
公开(公告)日：2021-01-28
申请号：US17043140
申请日：2019-04-05
IPC分类号： H01J37/28 , H01J37/244 , H01J37/22
摘要： A scanning electron microscopy system that includes a primary electron beam radiation unit configured to irradiate a first pattern of a substrate having a second pattern formed in a peripheral region of the first pattern, a detection unit configured to detect back scattered electrons emitted from the substrate, an image generation unit configured to generate an electron beam image corresponding to a strength of the back scattered electrons, a designating unit configured to designate a depth measurement region in which the first pattern exists on the electron beam image, and a processing unit configured to obtain an image signal of the depth measurement region and a pattern density in the peripheral region where the second pattern exists, and to estimate a depth of the first pattern based on the obtained image signal of the depth measurement region and the pattern density in the peripheral region.
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公开(公告)号：US11626266B2
公开(公告)日：2023-04-11
申请号：US17501249
申请日：2021-10-14
发明人： Keiichiro Hitomi , Kenji Tanimoto , Yusuke Abe , Takuma Yamamoto , Kei Sakai , Satoru Yamaguchi , Yasunori Goto , Shuuichirou Takahashi
IPC分类号： H01J37/22 , H01J37/21 , H01J37/147
摘要： Provided is a charged particle beam device capable of focusing with high accuracy even when a charged particle beam has a large off-axis amount. The charged particle beam device generates an observation image of a sample by irradiating the sample with a charged particle beam, and includes: a deflection unit that inclines the charged particle beam; a focusing lens that focuses the charged particle beam; an adjustment unit that adjusts a lens strength of the focusing lens based on an evaluation value calculated from the observation image; a storage unit that stores a relationship between a visual field movement amount and the lens strength; and a filter setting unit that calculates the visual field movement amount based on an inclination angle of the charged particle beam and the relationship, and sets an image filter to be superimposed on the observation image based on the calculated visual field movement amount.
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公开(公告)号：US11562882B2
公开(公告)日：2023-01-24
申请号：US17412181
申请日：2021-08-25
发明人： Takuma Yamamoto
IPC分类号： H01J37/12 , H01J37/21 , H01J37/24 , H01J37/28 , H01J37/244
摘要： When a high-performance retarding voltage applying power supply cannot be employed in terms of costs or device miniaturization, it is difficult to sufficiently adjust focus in a high acceleration region within a range of changing an applied voltage, and identify a point at which a focus evaluation value is maximum. To address the above problems, a scanning electron microscope is provided including: an objective lens configured to converge an electron beam emitted from an electron source; a current source configured to supply an excitation current to the objective lens; a negative-voltage applying power supply configured to form a decelerating electric field of the electron beam on a sample; a detector configured to detect charged particles generated when the electron beam is emitted to the sample; and a control device configured to calculate a focus evaluation value from an image formed according to an output of the detector. The control device calculates a focus evaluation value when an applied voltage is changed, determines whether to increase or decrease an excitation current according to an increase or a decrease of the focus evaluation value, and supplies the excitation current based on a result of the determination.
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公开(公告)号：US11355304B2
公开(公告)日：2022-06-07
申请号：US15734367
申请日：2018-06-14
发明人： Takahiro Nishihata , Mayuka Osaki , Wei Sun , Takuma Yamamoto
IPC分类号： H01J37/21 , H01J37/22 , H01J37/244 , H01J37/28
摘要： In the present invention, an electro-optical condition generation unit includes: a condition setting unit that sets, as a plurality of electro-optical conditions, a plurality of electro-optical conditions in which the combinations of the aperture angle and the focal-point height for an electron beam are different; an index calculating unit that determines a measurement-performance index in the electro-optical conditions set by the condition setting unit; and a condition deriving unit that derives an electro-optical condition, including an aperture angle and a focal-point height, so that the measurement-performance index determined by the index calculating unit becomes a prescribed value.
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