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1.发明授权TFT device with channel region above convex insulator portions and source/drain in concave between convex insulator portions 有权TFT器件，其沟槽区域位于凸形绝缘体部分之上，并且在凸形绝缘体部分之间的凹陷中的源极/漏极公开(公告)号：US08143118B2
公开(公告)日：2012-03-27
申请号：US12073618
申请日：2008-03-07
申请人： Hideto Ohnuma , Atsuo Isobe , Hiromichi Godo
发明人： Hideto Ohnuma , Atsuo Isobe , Hiromichi Godo
IPC分类号： H01L21/84
CPC分类号： H01L29/78696 , H01L21/0237 , H01L21/02675 , H01L21/02691 , H01L27/1281
摘要： A semiconductor device having a highly responsive thin film transistor (TFT) with low subthreshold swing and suppressed decrease in the on-state current and a manufacturing method thereof are demonstrated. The TFT of the present invention is characterized by its semiconductor layer where the thickness of the source region or the drain region is larger than that of the channel formation region. Manufacture of the TFT is readily achieved by the formation of an amorphous semiconductor layer on a projection portion and a depression portion, which is followed by subjecting the melting process of the semiconductor layer, resulting in the formation of a crystalline semiconductor layer having different thicknesses. Selective addition of impurity to the thick portion of the semiconductor layer provides a semiconductor layer in which the channel formation region is thinner than the source or drain region.
摘要翻译： 示出了具有低亚阈值摆动和抑制导通电流下降的高响应性薄膜晶体管（TFT）的半导体器件及其制造方法。 本发明的TFT的特征在于其源极区域或漏极区域的厚度大于沟道形成区域的厚度的半导体层。 通过在突起部分和凹陷部分上形成非晶半导体层来容易地实现TFT的制造，随后对半导体层进行熔化处理，形成具有不同厚度的晶体半导体层。 选择性地向半导体层的厚部分添加杂质提供了沟道形成区域比源区或漏区更薄的半导体层。
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2.发明授权Semiconductor device including semiconductor layer over insulating layer and manufacturing method thereof 有权包括绝缘层上的半导体层的半导体器件及其制造方法公开(公告)号：US09130051B2
公开(公告)日：2015-09-08
申请号：US13402212
申请日：2012-02-22
申请人： Hideto Ohnuma , Atsuo Isobe , Hiromichi Godo
发明人： Hideto Ohnuma , Atsuo Isobe , Hiromichi Godo
IPC分类号： H01L29/786 , H01L27/12 , H01L21/02
CPC分类号： H01L29/78696 , H01L21/0237 , H01L21/02675 , H01L21/02691 , H01L27/1281
摘要： A semiconductor device having a highly responsive thin film transistor (TFT) with low subthreshold swing and suppressed decrease in the on-state current and a manufacturing method thereof are demonstrated. The TFT of the present invention is characterized by its semiconductor layer where the thickness of the source region or the drain region is larger than that of the channel formation region. Manufacture of the TFT is readily achieved by the formation of an amorphous semiconductor layer on a projection portion and a depression portion, which is followed by subjecting the melting process of the semiconductor layer, resulting in the formation of a crystalline semiconductor layer having different thicknesses. Selective addition of impurity to the thick portion of the semiconductor layer provides a semiconductor layer in which the channel formation region is thinner than the source or drain region.
摘要翻译： 示出了具有低亚阈值摆动和抑制导通电流下降的高响应性薄膜晶体管（TFT）的半导体器件及其制造方法。 本发明的TFT的特征在于其源极区域或漏极区域的厚度大于沟道形成区域的厚度的半导体层。 通过在突起部分和凹陷部分上形成非晶半导体层来容易地实现TFT的制造，随后对半导体层进行熔化处理，形成具有不同厚度的晶体半导体层。 选择性地向半导体层的厚部分添加杂质提供了沟道形成区域比源区或漏区更薄的半导体层。
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公开(公告)号：US20080220570A1
公开(公告)日：2008-09-11
申请号：US12073618
申请日：2008-03-07
申请人： Hideto Ohnuma , Atsuo Isobe , Hiromichi Godo
发明人： Hideto Ohnuma , Atsuo Isobe , Hiromichi Godo
IPC分类号： H01L21/84
CPC分类号： H01L29/78696 , H01L21/0237 , H01L21/02675 , H01L21/02691 , H01L27/1281
摘要： A semiconductor device having a highly responsive thin film transistor (TFT) with low subthreshold swing and suppressed decrease in the on-state current and a manufacturing method thereof are demonstrated. The THF of the present invention is characterized by its semiconductor layer where the thickness of the source region or the drain region is larger than that of the channel formation region. Manufacture of the TFT is readily achieved by the formation of an amorphous semiconductor layer on a projection portion and a depression portion, which is followed by subjecting the melting process of the semiconductor layer, resulting in the formation of a crystalline semiconductor layer having different thicknesses. Selective addition of impurity to the thick portion of the semiconductor layer provides a semiconductor layer in which the channel formation region is thinner than the source or drain region.
摘要翻译： 示出了具有低亚阈值摆动和抑制导通电流下降的高响应性薄膜晶体管（TFT）的半导体器件及其制造方法。 本发明的THF的特征在于其源区域或漏极区域的厚度大于沟道形成区域的厚度的半导体层。 通过在突起部分和凹陷部分上形成非晶半导体层来容易地实现TFT的制造，随后对半导体层进行熔化处理，形成具有不同厚度的晶体半导体层。 选择性地向半导体层的厚部分添加杂质提供了沟道形成区域比源区或漏区更薄的半导体层。
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公开(公告)号：US07476908B2
公开(公告)日：2009-01-13
申请号：US11121070
申请日：2005-05-04
IPC分类号： H01L29/207 , H01L33/00
CPC分类号： H01L27/3244 , H01L27/3248 , H01L27/3258 , H01L51/5262
摘要： An object of the invention is to provide a light emitting device in which the variation in emission spectrum depending on an angle for seeing a surface through which light is emitted is reduced. The light emitting device of the invention includes a first insulating layer formed over a substrate, a second insulating layer formed over the first insulating layer, and a semiconductor layer formed over the second insulating layer. A gate insulating layer is formed to cover the second insulating layer and the semiconductor layer. A gate electrode is formed over the gate insulating layer. A first interlayer insulating layer is formed to cover the gate insulating layer and the gate electrode. An opening is formed through the first interlayer insulating layer, the gate insulating layer and the second insulating layer. A second interlayer insulating layer is formed to cover the first insulating layer and the opening. A light emitting element is formed over the opening.
摘要翻译： 本发明的一个目的是提供一种发光装置，其中发光光谱的变化取决于用于观察发射光的表面的角度。 本发明的发光器件包括形成在衬底上的第一绝缘层，形成在第一绝缘层上的第二绝缘层，以及形成在第二绝缘层上的半导体层。 形成栅极绝缘层以覆盖第二绝缘层和半导体层。 在栅绝缘层上形成栅电极。 形成第一层间绝缘层以覆盖栅极绝缘层和栅电极。 通过第一层间绝缘层，栅极绝缘层和第二绝缘层形成开口。 形成第二层间绝缘层以覆盖第一绝缘层和开口。 在开口上形成发光元件。
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公开(公告)号：US20050258443A1
公开(公告)日：2005-11-24
申请号：US11121070
申请日：2005-05-04
CPC分类号： H01L27/3244 , H01L27/3248 , H01L27/3258 , H01L51/5262
摘要： An object of the invention is to provide a light emitting device in which the variation in emission spectrum depending on an angle for seeing a surface through which light is emitted is reduced. The light emitting device of the invention includes a first insulating layer formed over a substrate, a second insulating layer formed over the first insulating layer, and a semiconductor layer formed over the second insulating layer. A gate insulating layer is formed to cover the second insulating layer and the semiconductor layer. A gate electrode is formed over the gate insulating layer. A first interlayer insulating layer is formed to cover the gate insulating layer and the gate electrode. An opening is formed through the first interlayer insulating layer, the gate insulating layer and the second insulating layer. A second interlayer insulating layer is formed to cover the first insulating layer and the opening. A light emitting element is formed over the opening.
摘要翻译： 本发明的一个目的是提供一种发光装置，其中发光光谱的变化取决于用于观察发射光的表面的角度。 本发明的发光器件包括形成在衬底上的第一绝缘层，形成在第一绝缘层上的第二绝缘层，以及形成在第二绝缘层上的半导体层。 形成栅极绝缘层以覆盖第二绝缘层和半导体层。 在栅绝缘层上形成栅电极。 形成第一层间绝缘层以覆盖栅极绝缘层和栅电极。 通过第一层间绝缘层，栅极绝缘层和第二绝缘层形成开口。 形成第二层间绝缘层以覆盖第一绝缘层和开口。 在开口上形成发光元件。
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公开(公告)号：US20050255617A1
公开(公告)日：2005-11-17
申请号：US11121073
申请日：2005-05-04
申请人： Shunpei Yamazaki , Hideto Ohnuma , Mitsuaki Osame , Aya Anzai , Hiromichi Godo , Tomoya Futamura
发明人： Shunpei Yamazaki , Hideto Ohnuma , Mitsuaki Osame , Aya Anzai , Hiromichi Godo , Tomoya Futamura
CPC分类号： H01L51/5262 , H01L27/1248 , H01L27/3244 , H01L27/3248 , H01L27/3258
摘要： In a method for manufacturing a display device having a light emitting element, a first base insulating film, a second base insulating film, a semiconductor layer, and a gate insulating film are formed in this order over a substrate. A gate electrode is formed over the gate insulating film to overlap with at least a part of the semiconductor layer, and a portion to be a pixel portion of the gate insulating film and the second base insulating film is doped with at least one conductive type impurities. An opening portion is formed by selectively etching the gate insulating film and second base insulating film that are each doped with impurities. The first base insulating film is exposed in a bottom face of the opening portion. Subsequently, an insulating film is formed to cover the opening portion, the gate insulating film, and the gate electrode, and a light emitting element is formed over the insulating film to overlap with at least a part of the opening portion.
摘要翻译： 在具有发光元件的显示装置的制造方法中，在衬底上依次形成第一基底绝缘膜，第二基底绝缘膜，半导体层和栅极绝缘膜。 栅极电极形成在栅极绝缘膜上方以与半导体层的至少一部分重叠，栅极绝缘膜和第二基底绝缘膜的像素部分的一部分被掺杂有至少一种导电类型的杂质 。 通过选择性地蚀刻各自掺杂有杂质的栅极绝缘膜和第二基底绝缘膜来形成开口部。 第一基底绝缘膜在开口部的底面露出。 随后，形成绝缘膜以覆盖开口部分，栅极绝缘膜和栅电极，并且在绝缘膜上形成发光元件以与开口部分的至少一部分重叠。
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公开(公告)号：US07687404B2
公开(公告)日：2010-03-30
申请号：US11121073
申请日：2005-05-04
申请人： Shunpei Yamazaki , Hideto Ohnuma , Mitsuaki Osame , Aya Anzai , Hiromichi Godo , Tomoya Futamura
发明人： Shunpei Yamazaki , Hideto Ohnuma , Mitsuaki Osame , Aya Anzai , Hiromichi Godo , Tomoya Futamura
IPC分类号： H01L21/302
CPC分类号： H01L51/5262 , H01L27/1248 , H01L27/3244 , H01L27/3248 , H01L27/3258
摘要： In a method for manufacturing a display device having a light emitting element, a first base insulating film, a second base insulating film, a semiconductor layer, and a gate insulating film are formed in this order over a substrate. A gate electrode is formed over the gate insulating film to overlap with at least a part of the semiconductor layer, and a portion to be a pixel portion of the gate insulating film and the second base insulating film is doped with at least one conductive type impurities. An opening portion is formed by selectively etching the gate insulating film and second base insulating film that are each doped with impurities. The first base insulating film is exposed in a bottom face of the opening portion. Subsequently, an insulating film is formed to cover the opening portion, the gate insulating film, and the gate electrode, and a light emitting element is formed over the insulating film to overlap with at least a part of the opening portion.
摘要翻译： 在具有发光元件的显示装置的制造方法中，在衬底上依次形成第一基底绝缘膜，第二基底绝缘膜，半导体层和栅极绝缘膜。 栅极电极形成在栅极绝缘膜上方以与半导体层的至少一部分重叠，栅极绝缘膜和第二基底绝缘膜的像素部分的一部分被掺杂有至少一种导电类型的杂质 。 通过选择性地蚀刻各自掺杂有杂质的栅极绝缘膜和第二基底绝缘膜来形成开口部。 第一基底绝缘膜在开口部的底面露出。 随后，形成绝缘膜以覆盖开口部分，栅极绝缘膜和栅电极，并且在绝缘膜上形成发光元件以与开口部分的至少一部分重叠。
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公开(公告)号：US08574976B2
公开(公告)日：2013-11-05
申请号：US12904235
申请日：2010-10-14
IPC分类号： H01L21/00
CPC分类号： H01L27/127 , G02F1/13454 , H01L27/1203 , H01L27/1214 , H01L29/4908 , H01L29/66757 , H01L29/78696
摘要： A TFT having a high threshold voltage is connected to the source electrode of each TFT that constitutes a CMOS circuit. In another aspect, pixel thin-film transistors are constructed such that a thin-film transistor more distant from a gate line drive circuit has a lower threshold voltage. In a further aspect, a control film that is removable in a later step is formed on the surface of the channel forming region of a TFT, and doping is performed from above the control film.
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公开(公告)号：US08471262B2
公开(公告)日：2013-06-25
申请号：US13238754
申请日：2011-09-21
申请人： Shunpei Yamazaki , Satoshi Murakami , Jun Koyama , Yukio Tanaka , Hidehito Kitakado , Hideto Ohnuma
发明人： Shunpei Yamazaki , Satoshi Murakami , Jun Koyama , Yukio Tanaka , Hidehito Kitakado , Hideto Ohnuma
IPC分类号： H01L27/14
CPC分类号： G02F1/1368 , G02F1/133345 , G02F1/13454 , G02F1/136227 , G02F1/136286 , G02F2201/123 , G02F2202/104 , H01L27/12 , H01L27/1222 , H01L27/124 , H01L27/1248 , H01L27/1259 , H01L27/3248 , H01L27/3258 , H01L27/3262 , H01L27/3272 , H01L27/3276 , H01L29/458 , H01L29/78621 , H01L29/78627 , H01L29/78675 , H01L2029/7863 , H01L2227/323
摘要： This invention provides a semiconductor device having high operation performance and high reliability. An LDD region 707 overlapping with a gate wiring is arranged in an n-channel TFT 802 forming a driving circuit, and a TFT structure highly resistant to hot carrier injection is achieved. LDD regions 717, 718, 719 and 720 not overlapping with a gate wiring are arranged in an n-channel TFT 804 forming a pixel unit. As a result, a TFT structure having a small OFF current value is achieved. In this instance, an element belonging to the Group 15 of the Periodic Table exists in a higher concentration in the LDD region 707 than in the LDD regions 717, 718, 719 and 720.
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公开(公告)号：US08470648B2
公开(公告)日：2013-06-25
申请号：US12899993
申请日：2010-10-07
IPC分类号： H01L21/762
CPC分类号： H01L27/1266 , H01L21/31662 , H01L21/76254 , H01L21/8221 , H01L21/84 , H01L27/0688 , H01L27/1203 , H01L27/1214 , H01L27/1229 , H01L29/66772 , H01L2224/16225 , H01L2224/16227 , H01L2224/32245 , H01L2224/73253 , H01L2924/00011 , H01L2924/00014 , H01L2224/13099 , H01L2224/29099 , H01L2224/80001
摘要： A semiconductor device including a plurality of field-effect transistors which are stacked with a planarization layer interposed therebetween over a substrate having an insulating surface, in which semiconductor layers in the plurality of field-effect transistors are separated from semiconductor substrates, and the semiconductor layers are bonded to an insulating layer formed over the substrate having an insulating surface or an insulating layer formed over the planarization layer.
摘要翻译： 一种半导体器件，包括多个场效应晶体管，所述多个场效应晶体管在其间具有绝缘表面的衬底上层叠有平坦化层，所述多个场效应晶体管中的半导体层与半导体衬底分离，并且所述半导体层 被结合到形成在具有形成在平坦化层上的绝缘表面或绝缘层的衬底上的绝缘层。
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