公开(公告)号：US09602103B2

公开(公告)日：2017-03-21

申请号：US14893060

申请日：2013-05-22

Applicant: HITACHI, LTD.

Inventor： Katsuya Miura ,  Susumu Ogawa ,  Kenchi Ito ,  Masaki Yamada

IPC: H03K19/18 ,  H03K19/00 ,  H01L29/82 ,  H03K19/16 ,  H01L29/66 ,  H01L29/10 ,  G11C11/16 ,  H01L27/22 ,  H01L43/02 ,  H01L43/08 ,  H03K3/356 ,  H03L7/00

CPC classification number: H03K19/0016 ,  G11C11/14 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/1693 ,  H01L27/22 ,  H01L29/1029 ,  H01L29/66984 ,  H01L29/82 ,  H01L43/02 ,  H01L43/08 ,  H03K3/356 ,  H03K19/16 ,  H03K19/18 ,  H03L7/00

Abstract: As a technique for attaining a reduction in power consumption, there is a technique for reducing power consumption using a spin wave. No specific proposal concerning spin wave generation, spin wave detection, and a latch technique for information has been made.A device applies an electric field to a first electrode of a nonmagnetic material using a thin line-shaped stacked body including a first ferromagnetic layer and a nonmagnetic layer to thereby generate a spin wave in the first ferromagnetic layer, and detects a phase or amplitude of the spin wave propagated in the first ferromagnetic layer using a second electrode of a ferromagnetic material with a magnetoresistance effect.

公开(公告)号：US10336609B2

公开(公告)日：2019-07-02

申请号：US15610987

申请日：2017-06-01

Applicant: HITACHI, LTD.

Inventor： Keiji Watanabe ,  Shuntaro Machida ,  Katsuya Miura ,  Aki Takei ,  Tetsufumi Kawamura ,  Nobuyuki Sugii ,  Daisuke Ryuzaki

IPC: B81C1/00 ,  B05D3/06 ,  B81C99/00

Abstract: First, an ion beam is applied to a workpiece to form a tapered hole the side wall of which is inclined. Next, the application of the ion beam is stopped, and then a material gas is introduced from the gas source to the upper surface of the workpiece from an oblique direction to cause gas molecules to be adsorbed to the upper surface of the workpiece and to the upper portion of the side wall of the hole. Next, introduction of the material gas is stopped, and then the ion beam is applied again to the region of the workpiece where the hole is formed. As a result, at the upper portion of the side wall of the hole, film formation occurs using the gas molecules as the material adsorbed to the side wall of the hole, and, at the bottom portion of the hole, etching of the workpiece occurs.