State detecting system and state detecting method

    公开(公告)号:US11156650B2

    公开(公告)日:2021-10-26

    申请号:US16446907

    申请日:2019-06-20

    申请人: HITACHI, LTD.

    摘要: One preferable aspect of the present invention is a state detecting system which detects a state of a machine device based on a detection signal from a detecting element provided to the machine device, and is the state detecting system which includes a non-normal time rate detecting unit which detects a rate or a value as a non-normal time rate, the rate being a rate of an integration value of a time during which an amplitude of the detection signal exceeds a predetermined normal amplitude within a predetermined time, and the value being physically equivalent to the rate.

    Microstructure processing method and microstructure processing apparatus

    公开(公告)号:US10336609B2

    公开(公告)日:2019-07-02

    申请号:US15610987

    申请日:2017-06-01

    申请人: HITACHI, LTD.

    IPC分类号: B81C1/00 B05D3/06 B81C99/00

    摘要: First, an ion beam is applied to a workpiece to form a tapered hole the side wall of which is inclined. Next, the application of the ion beam is stopped, and then a material gas is introduced from the gas source to the upper surface of the workpiece from an oblique direction to cause gas molecules to be adsorbed to the upper surface of the workpiece and to the upper portion of the side wall of the hole. Next, introduction of the material gas is stopped, and then the ion beam is applied again to the region of the workpiece where the hole is formed. As a result, at the upper portion of the side wall of the hole, film formation occurs using the gas molecules as the material adsorbed to the side wall of the hole, and, at the bottom portion of the hole, etching of the workpiece occurs.