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1.发明申请公开(公告)号：US20140241734A1
公开(公告)日：2014-08-28
申请号：US14088422
申请日：2013-11-24
Applicant: Hitachi, Ltd.
Inventor： Misuzu Sagawa , Katsuya Oda , Kazuki Tani
CPC classification number: G02B6/1223 , G02B6/12004 , G02B6/1228 , G02B6/131 , H01S5/021 , H01S5/026 , H01S5/1014 , H01S5/1032 , H01S5/141
Abstract: The light emitting device includes an active layer formed on a semiconductor substrate for emitting light, a semiconductor layer of a first conductivity type electrically connected to one end of the active layer, a semiconductor layer of a second conductivity type electrically connected to the other end of the active layer, first and second electrodes, a feedback mechanism for laser oscillation, and a waveguide for guiding the light emitted from the active layer, in which the active layer is made of a semiconductor having an affinity with a silicon CMOS process, and the semiconductor layer of the first conductivity type and the semiconductor layer of the second conductivity type, and the waveguide are each made of silicon as a part of the semiconductor substrate.
Abstract translation: 发光器件包括形成在用于发光的半导体衬底上的有源层，与有源层的一端电连接的第一导电类型的半导体层，电连接到有源层的另一端的第二导电类型的半导体层 有源层，第一和第二电极，用于激光振荡的反馈机构，以及用于引导从有源层发射的光的波导，其中有源层由与硅CMOS工艺具有亲和性的半导体制成，以及 第一导电类型的半导体层和第二导电类型的半导体层，并且波导都由作为半导体衬底的一部分的硅制成。
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Patent Agency Ranking
公开(公告)号：US10662059B2
公开(公告)日：2020-05-26
申请号：US16015640
申请日：2018-06-22
Applicant: HITACHI, LTD.
Inventor： Keiji Watanabe , Hiroyasu Shichi , Misuzu Sagawa , Toshiyuki Mine , Daisuke Ryuzaki
IPC: B81C99/00 , H01J37/317 , H01J37/304 , H01J37/147 , G03F7/20 , B81C1/00 , H01J37/305
Abstract: The invention is to reduce non-uniformity of a processing shape over a wide range of a single field-of-view.The invention is directed to a method of processing micro electro mechanical systems with a first step and a second step in a processing apparatus including an irradiation unit that irradiates a sample with a charged particle beam, a shape measuring unit that measures a shape of the sample, and a control unit. In the first step, the irradiation unit irradiates a plurality of single field-of-view points with the charged particle beam in a first region of the sample, the shape measuring unit measures the shape of a spot hole formed in the first region of the sample, and the control unit sets, based on measurement results of the shape of the spot hole, a scan condition of the charged particle beam or a forming mask of the charged particle beam at each of the single field-of-view points. In the second step, the irradiation unit irradiates, based on the scan condition or the forming mask set in the first step, a second region of the sample with the charged particle beam.
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公开(公告)号：US10538429B2
公开(公告)日：2020-01-21
申请号：US16030256
申请日：2018-07-09
Applicant: Hitachi, Ltd.
Inventor： Misuzu Sagawa , Atsushi Isobe
IPC: B81C99/00
Abstract: In a calculator in a MEMS manufacturing system, a stage control unit inclines a stage based on a stage angle 1 setting a stage inclination angle and a stage angle 2 of the inclination angle different from the stage angle 1. A stage-angle calculation unit calculates the stage inclination angles from first and second images acquired by a SEM apparatus when the stage control unit sets the stage at the stage angles 1 and 2. A 3D-data creation unit creates three-dimensional device data from a third image that is a device image acquired when the stage is set at the stage angle 1 and a fourth image that is a device image acquired when the stage is set at the stage angle 2. When the three-dimensional device data is created, a correction value calculated from the stage angles 1 and 2 and the first and second images is used.
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公开(公告)号：US10410826B2
公开(公告)日：2019-09-10
申请号：US16069796
申请日：2016-03-18
Applicant: HITACHI, LTD.
Inventor： Tetsufumi Kawamura , Misuzu Sagawa , Kazuki Watanabe , Keiji Watanabe , Shuntaro Machida , Nobuyuki Sugii , Daisuke Ryuzaki
IPC: H01J37/28 , H01J37/302 , H01J37/305 , H01L21/3065 , H01L21/66 , B81C1/00
Abstract: The invention is directed to a technique for reducing the time from the start of fabrication of a prototype structure to the completion of fabrication of a real structure. A device processing method includes steps of: fabricating a first structure using an ion beam under a first condition in a first region on a substrate; measuring a size of the first structure which is fabricated; comparing the measurement result with design data; determining a second condition from the comparison result; and fabricating a second structure using the ion beam under the second condition in a second region on the substrate.
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5.发明授权公开(公告)号：US09052449B2
公开(公告)日：2015-06-09
申请号：US14088422
申请日：2013-11-24
Applicant: Hitachi, Ltd.
Inventor： Misuzu Sagawa , Katsuya Oda , Kazuki Tani
CPC classification number: G02B6/1223 , G02B6/12004 , G02B6/1228 , G02B6/131 , H01S5/021 , H01S5/026 , H01S5/1014 , H01S5/1032 , H01S5/141
Abstract: The light emitting device includes an active layer formed on a semiconductor substrate for emitting light, a semiconductor layer of a first conductivity type electrically connected to one end of the active layer, a semiconductor layer of a second conductivity type electrically connected to the other end of the active layer, first and second electrodes, a feedback mechanism for laser oscillation, and a waveguide for guiding the light emitted from the active layer, in which the active layer is made of a semiconductor having an affinity with a silicon CMOS process, and the semiconductor layer of the first conductivity type and the semiconductor layer of the second conductivity type, and the waveguide are each made of silicon as a part of the semiconductor substrate.
Abstract translation: 发光器件包括形成在用于发光的半导体衬底上的有源层，与有源层的一端电连接的第一导电类型的半导体层，电连接到有源层的另一端的第二导电类型的半导体层 有源层，第一和第二电极，用于激光振荡的反馈机构，以及用于引导从有源层发射的光的波导，其中有源层由与硅CMOS工艺具有亲和性的半导体制成，以及 第一导电类型的半导体层和第二导电类型的半导体层，并且波导都由作为半导体衬底的一部分的硅制成。
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公开(公告)号：US10002801B2
公开(公告)日：2018-06-19
申请号：US15597285
申请日：2017-05-17
Applicant: HITACHI, LTD.
Inventor： Misuzu Sagawa , Tetsufumi Kawamura
CPC classification number: H01L22/20 , B81C1/00547 , B81C99/0025 , B81C99/0065 , B81C2201/0142 , H01L21/30604 , H01L21/67069 , H01L21/67253 , H01L21/67259
Abstract: The device manufacturing method includes a length measuring step (S5) of, on the basis of an observation target image of an SEM image taken from a direction having a predetermined angle from a direction perpendicular to a plane of a substrate, measuring the thickness of a target object, or the depth of etching, formed on the substrate. In addition, in the length measuring step, an etching angle made by a cross section of the etching and the direction perpendicular to the plane of the substrate is calculated from processing data of the target object, and the thickness of the target object or the depth of the etching is measured on the basis of the calculated etching angle.
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