SEMICONDUCTOR FAILURE ANALYSIS DEVICE AND SEMICONDUCTOR FAILURE ANALYSIS METHOD

    公开(公告)号:US20230072615A1

    公开(公告)日:2023-03-09

    申请号:US17798980

    申请日:2020-11-17

    Abstract: A semiconductor failure analysis device includes an analysis part that analyzes a failure place in a semiconductor device; a marking part that irradiates the semiconductor device with laser light; a device arrangement part in which a wafer chuck, which holds the semiconductor device and on which an alignment target is provided, moves relative to the analysis part and the marking part; and a control part that outputs commands. The control part moves the wafer chuck to a position at which the analysis part is capable of taking an image of the alignment target, then outputs an alignment command that causes the marking part to be aligned with the analysis part with the alignment target as a reference, and irradiates the semiconductor device with laser light in a state in which a positional relationship between the marking part and the analysis part is maintained.

    SEMICONDUCTOR DEVICE INSPECTION METHOD AND SEMICONDUCTOR DEVICE INSPECTION DEVICE

    公开(公告)号:US20210270752A1

    公开(公告)日:2021-09-02

    申请号:US17278683

    申请日:2019-06-25

    Inventor: Shinsuke SUZUKI

    Abstract: A semiconductor device inspection method includes: performing a first inspection irradiation on at least one portion in an area to be inspected; outputting first information indicating presence or absence of a defective portion in an entire of the area to be inspected, based on the first inspection irradiation; when it is determined that a second inspection irradiation is to be performed, performing the inspection irradiation on at least one portion in the area to be inspected of the semiconductor device to which the test signal is being input, the portion of the second inspection irradiation is different from the portion of the first inspection irradiation; and outputting second information indicating presence or absence of a defective portion in the entire of the area to be inspected, based on the second inspection irradiation.

    SEMICONDUCTOR FAULT ANALYSIS DEVICE AND SEMICONDUCTOR FAULT ANALYSIS METHOD

    公开(公告)号:US20230061399A1

    公开(公告)日:2023-03-02

    申请号:US17799009

    申请日:2021-01-13

    Abstract: A control part of a semiconductor fault analysis device outputs an alignment command that moves a chuck to a position at which a target is detectable by a first optical detection part and then aligns an optical axis of a second optical system with an optical axis of a first optical system with the target as a reference, and outputs an analysis command that applies a stimulus signal to a semiconductor device and receives light from the semiconductor device emitted according to a stimulus signal with at least one of a first optical detection part and a second optical detection part in a state in which a positional relationship between the optical axis of the first optical system and the optical axis of the second optical system is maintained.

    INSPECTION METHOD, INSPECTION DEVICE, AND MARKING FORMING METHOD

    公开(公告)号:US20200152525A1

    公开(公告)日:2020-05-14

    申请号:US16742382

    申请日:2020-01-14

    Abstract: An inspection method according to an embodiment is an inspection method of performing laser marking on a semiconductor device (D) including a substrate (SiE) and a metal layer (ME) formed on the substrate (SiE), and the inspection method includes specifying a fault point (fp) in the semiconductor device (D) by inspecting the semiconductor device (D), and irradiating the semiconductor device (D) with laser light having a wavelength that is transmitted through the substrate (SiE) from the substrate (SiE) side so that a marking is formed at least at a boundary between the substrate (SiE) and the metal layer (ME) on the basis of the fault point (fp).

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