-
公开(公告)号:US20210028759A1
公开(公告)日:2021-01-28
申请号:US16977827
申请日:2019-03-05
Applicant: Georgia Tech Research Corporation
Inventor: Farrokh Ayazi , Benoit Hamelin , Jeremy Yang
IPC: H03H9/02 , H03H9/24 , G01C19/5698
Abstract: Embodiments of the present disclosure relate generally to acoustically decoupled microelectromechanical system devices and, more particularly, to acoustically decoupled microelectromechanical system devices anchored upon phononic crystals. In some embodiments described herein, a device may comprise a resonator, a handle layer, and a pedestal disposed between the resonator and the handle layer, the pedestal connecting the resonator to the handle layer. In the devices described herein, the resonator and the handle layer may be non-coplanar. In some embodiments, the handle layer comprises a phononic crystal to acoustically decouple the resonator from the substrate of the handle layer.
-
公开(公告)号:US20240030887A1
公开(公告)日:2024-01-25
申请号:US18451675
申请日:2023-08-17
Applicant: Georgia Tech Research Corporation
Inventor: Farrokh Ayazi , Benoit Hamelin , Jeremy Yang
IPC: H03H9/02 , G01C19/5698 , H03H9/24
CPC classification number: H03H9/02433 , G01C19/5698 , H03H9/02338 , H03H9/2436 , H03H2009/0244
Abstract: A resonator element of the monocrystalline 4H or 6H polytype of silicon carbide. A MEMS device including the resonator element and a substrate, wherein the resonator element and the substrate are not coplanar, and acoustic decoupling of the resonator element and the substrate is at least partially dependent upon a degree to which the resonator element and the substrate are not coplanar. A MEMS gyroscope including the resonator element, a substrate, one or more electrodes disposed proximate the resonator element, and a capacitive gap disposed between each electrode and the resonator element. A MEMS device including the resonator element having has a Q greater than 1,000,000, a phononic crystal substrate, and a gap disposed between a perimeter edge of the resonator element and the phononic crystal substrate, wherein acoustic decoupling of the resonator element and the phononic crystal substrate is at least partially dependent upon a size of the gap.
-
公开(公告)号:US20180222748A1
公开(公告)日:2018-08-09
申请号:US15875943
申请日:2018-01-19
Applicant: Georgia Tech Research Corporation
Inventor: Benoit Hamelin , Farrokh Ayazi
CPC classification number: B81C1/0065 , B23K26/0006 , B23K26/20 , B23K26/34 , B23K26/351 , B23K26/354 , B23K2101/40 , B23K2103/08 , B23K2103/52 , B81B3/007 , B81B2201/0242 , B81B2201/0271 , B81C2201/0166 , B81C2201/0167 , B81C2201/0169 , H01L41/253 , H03H3/013 , H03H3/04
Abstract: Embodiments of the present disclosure can include a method for frequency trimming a microelectromechanical resonator, the resonator comprising a substrate and a plurality of loading elements layered on a surface of the substrate, the method comprising: selecting a first loading element of the plurality of loading elements, the first loading element being layered on a surface of a region of interest of the substrate; heating the first loading element and substrate within the region of interest to a predetermined temperature using an optical energy source, causing the first loading element to diffuse into the substrate; and cooling the region of interest to form a eutectic composition layer bonding the loading element and the substrate within the region of interest.
-
公开(公告)号:US11777468B2
公开(公告)日:2023-10-03
申请号:US16977827
申请日:2019-03-05
Applicant: Georgia Tech Research Corporation
Inventor: Farrokh Ayazi , Benoit Hamelin , Jeremy Yang
IPC: H03H9/02 , H03H9/24 , G01C19/5698
CPC classification number: H03H9/02433 , G01C19/5698 , H03H9/02338 , H03H9/2436 , H03H2009/0244
Abstract: Embodiments of the present disclosure relate generally to acoustically decoupled microelectromechanical system devices and, more particularly, to acoustically decoupled microelectromechanical system devices anchored upon phononic crystals. In some embodiments described herein, a device may comprise a resonator, a handle layer, and a pedestal disposed between the resonator and the handle layer, the pedestal connecting the resonator to the handle layer. In the devices described herein, the resonator and the handle layer may be non-coplanar. In some embodiments, the handle layer comprises a phononic crystal to acoustically decouple the resonator from the substrate of the handle layer.
-
公开(公告)号:US10947111B2
公开(公告)日:2021-03-16
申请号:US15875943
申请日:2018-01-19
Applicant: Georgia Tech Research Corporation
Inventor: Benoit Hamelin , Farrokh Ayazi
IPC: H04R31/00 , G01R3/00 , B81C1/00 , B23K26/20 , H03H3/013 , B23K26/34 , B23K26/351 , B23K26/00 , H03H3/04 , B23K26/354 , B81B3/00 , H01L41/253 , B23K103/00 , B23K103/08 , B23K101/40
Abstract: Embodiments of the present disclosure can include a method for frequency trimming a microelectromechanical resonator, the resonator comprising a substrate and a plurality of loading elements layered on a surface of the substrate, the method comprising: selecting a first loading element of the plurality of loading elements, the first loading element being layered on a surface of a region of interest of the substrate; heating the first loading element and substrate within the region of interest to a predetermined temperature using an optical energy source, causing the first loading element to diffuse into the substrate; and cooling the region of interest to form a eutectic composition layer bonding the loading element and the substrate within the region of interest.
-
-
-
-