公开(公告)号：US20210028759A1

公开(公告)日：2021-01-28

申请号：US16977827

申请日：2019-03-05

Applicant: Georgia Tech Research Corporation

Inventor： Farrokh Ayazi ,  Benoit Hamelin ,  Jeremy Yang

IPC: H03H9/02 ,  H03H9/24 ,  G01C19/5698

Abstract: Embodiments of the present disclosure relate generally to acoustically decoupled microelectromechanical system devices and, more particularly, to acoustically decoupled microelectromechanical system devices anchored upon phononic crystals. In some embodiments described herein, a device may comprise a resonator, a handle layer, and a pedestal disposed between the resonator and the handle layer, the pedestal connecting the resonator to the handle layer. In the devices described herein, the resonator and the handle layer may be non-coplanar. In some embodiments, the handle layer comprises a phononic crystal to acoustically decouple the resonator from the substrate of the handle layer.

公开(公告)号：US20240030887A1

公开(公告)日：2024-01-25

申请号：US18451675

申请日：2023-08-17

Applicant: Georgia Tech Research Corporation

Inventor： Farrokh Ayazi ,  Benoit Hamelin ,  Jeremy Yang

IPC: H03H9/02 ,  G01C19/5698 ,  H03H9/24

CPC classification number: H03H9/02433 ,  G01C19/5698 ,  H03H9/02338 ,  H03H9/2436 ,  H03H2009/0244

Abstract: A resonator element of the monocrystalline 4H or 6H polytype of silicon carbide. A MEMS device including the resonator element and a substrate, wherein the resonator element and the substrate are not coplanar, and acoustic decoupling of the resonator element and the substrate is at least partially dependent upon a degree to which the resonator element and the substrate are not coplanar. A MEMS gyroscope including the resonator element, a substrate, one or more electrodes disposed proximate the resonator element, and a capacitive gap disposed between each electrode and the resonator element. A MEMS device including the resonator element having has a Q greater than 1,000,000, a phononic crystal substrate, and a gap disposed between a perimeter edge of the resonator element and the phononic crystal substrate, wherein acoustic decoupling of the resonator element and the phononic crystal substrate is at least partially dependent upon a size of the gap.

公开(公告)号：US11777468B2

公开(公告)日：2023-10-03

申请号：US16977827

申请日：2019-03-05

Applicant: Georgia Tech Research Corporation

Inventor： Farrokh Ayazi ,  Benoit Hamelin ,  Jeremy Yang

IPC: H03H9/02 ,  H03H9/24 ,  G01C19/5698

CPC classification number: H03H9/02433 ,  G01C19/5698 ,  H03H9/02338 ,  H03H9/2436 ,  H03H2009/0244

Abstract: Embodiments of the present disclosure relate generally to acoustically decoupled microelectromechanical system devices and, more particularly, to acoustically decoupled microelectromechanical system devices anchored upon phononic crystals. In some embodiments described herein, a device may comprise a resonator, a handle layer, and a pedestal disposed between the resonator and the handle layer, the pedestal connecting the resonator to the handle layer. In the devices described herein, the resonator and the handle layer may be non-coplanar. In some embodiments, the handle layer comprises a phononic crystal to acoustically decouple the resonator from the substrate of the handle layer.