公开(公告)号：US09800208B2

公开(公告)日：2017-10-24

申请号：US15044701

申请日：2016-02-16

Applicant: Freescale Semiconductor, Inc.

Inventor： Mahesh K. Shah ,  Jerry L. White ,  Li Li ,  Hussain H. Ladhani ,  Audel A. Sanchez ,  Lakshminarayan Viswanathan ,  Fernando A. Santos

IPC: H03F1/00 ,  H03F1/02 ,  H03F3/195 ,  H03F3/213 ,  H03F1/56 ,  H03F3/21 ,  H03F1/30 ,  H03H1/00 ,  H01L23/31 ,  H01L23/495 ,  H01L23/66 ,  H03F3/193 ,  H05K7/00 ,  H01L23/64 ,  H03H7/38

CPC classification number: H03F1/0288 ,  H01L23/3107 ,  H01L23/49562 ,  H01L23/642 ,  H01L23/66 ,  H01L2223/665 ,  H01L2223/6655 ,  H01L2223/6666 ,  H01L2224/49175 ,  H01L2924/0002 ,  H03F1/0283 ,  H03F1/30 ,  H03F1/565 ,  H03F3/193 ,  H03F3/195 ,  H03F3/211 ,  H03F3/213 ,  H03F2200/267 ,  H03F2200/451 ,  H03F2200/555 ,  H03F2203/21103 ,  H03F2203/21106 ,  H03F2203/21139 ,  H03H1/00 ,  H03H7/38 ,  H03H2001/0021 ,  H05K7/005 ,  H01L2924/00

Abstract: An embodiment of a radio-frequency (RF) device includes at least one transistor, a package, and a surface-mountable capacitor. The package contains the at least one transistor and includes at least one termination. The surface-mountable capacitor is coupled in a shunt configuration between the at least one transistor and a power supply terminal of the device to decouple the at least one transistor from a power supply.

公开(公告)号：US09799580B2

公开(公告)日：2017-10-24

申请号：US15079276

申请日：2016-03-24

Applicant: FREESCALE SEMICONDUCTOR, INC.

Inventor： Li Li ,  Jaynal A. Molla ,  Lakshminarayan Viswanathan

IPC: H01L23/34 ,  H01L23/047 ,  H01L21/56 ,  H01L21/52 ,  H01L21/50 ,  H01L23/373 ,  H01L23/00 ,  H01L21/603 ,  H01L21/60

CPC classification number: H01L23/047 ,  H01L21/50 ,  H01L21/52 ,  H01L21/566 ,  H01L23/3157 ,  H01L23/373 ,  H01L23/3736 ,  H01L23/4334 ,  H01L24/29 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/75 ,  H01L24/83 ,  H01L24/85 ,  H01L24/92 ,  H01L2021/60277 ,  H01L2021/603 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29347 ,  H01L2224/29355 ,  H01L2224/29364 ,  H01L2224/29393 ,  H01L2224/29399 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83193 ,  H01L2224/8384 ,  H01L2224/85439 ,  H01L2224/85455 ,  H01L2224/92247 ,  H01L2924/16195 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/01046 ,  H01L2924/01079 ,  H01L2924/00

Abstract: A method of manufacturing a packaged semiconductor device includes forming an assembly by placing a semiconductor die over a substrate with a die attach material between the semiconductor die and the substrate. A conformal structure which includes a pressure transmissive material contacts at least a portion of a top surface of the semiconductor die. A pressure is applied to the conformal structure and in turn, the pressure is transmitted to the top surface of the semiconductor die by the pressure transmissive material. While the pressure is applied, concurrently encapsulating the assembly with a molding compound and exposing the assembly to a temperature that is sufficient to cause the die attach material to sinter.

公开(公告)号：US09300254B2

公开(公告)日：2016-03-29

申请号：US14316484

申请日：2014-06-26

Applicant: Freescale Semiconductor, Inc.

Inventor： Mahesh K. Shah ,  Jerry L. White ,  Li Li ,  Hussain H. Ladhani ,  Audel A. Sanchez ,  Lakshminarayan Viswanathan ,  Fernando A. Santos

IPC: H03F3/213 ,  H03F1/30 ,  H03H1/00 ,  H03F3/195

CPC classification number: H03F1/0288 ,  H01L23/3107 ,  H01L23/49562 ,  H01L23/642 ,  H01L23/66 ,  H01L2223/665 ,  H01L2223/6655 ,  H01L2223/6666 ,  H01L2224/49175 ,  H01L2924/0002 ,  H03F1/0283 ,  H03F1/30 ,  H03F1/565 ,  H03F3/193 ,  H03F3/195 ,  H03F3/211 ,  H03F3/213 ,  H03F2200/267 ,  H03F2200/451 ,  H03F2200/555 ,  H03F2203/21103 ,  H03F2203/21106 ,  H03F2203/21139 ,  H03H1/00 ,  H03H7/38 ,  H03H2001/0021 ,  H05K7/005 ,  H01L2924/00

Abstract: An embodiment of a radio-frequency (RF) device includes at least one transistor, a package, and a surface-mountable capacitor. The package contains the at least one transistor and includes at least one termination. The surface-mountable capacitor is coupled in a shunt configuration between the at least one transistor and a power supply terminal of the device to decouple the at least one transistor from a power supply.

Abstract translation: 射频（RF）器件的一个实施例包括至少一个晶体管，封装和表面贴装电容器。 该封装包含至少一个晶体管，并且包括至少一个端接。 表面安装电容器以至少一个晶体管和该器件的电源端之间的分流配置耦合，以将至少一个晶体管与电源分离。